Illustrative purposes only
SI8410DB-T2-E1
MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.8W
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.03ohm
- Transistor Case Style: TrenchFET
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5.7A
- Drain Source On State Resistance: 0.03ohm
- Gate Source Threshold Voltage Max: 850mV
| Delivery and price | |
|---|---|
| Units per pack | 6000 |
| Price | 0.659 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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