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SI7898DP-T1-GE3
Power MOSFET, N Channel, 150 V, 3 A, 0.085 ohm, SOIC, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.9W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3A
- Drain Source On State Resistance: 0.085ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.79 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 22, 2026