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SI7850ADP-T1-GE3
Power MOSFET, N Channel, 60 V, 12 A, 0.0195 ohm, PowerPAK SO, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Gen IV
- Qualification: -
- Power Dissipation: 35.7W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PowerPAK SO
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12A
- Drain Source On State Resistance: 0.0195ohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.399 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si7850ADP**
Vishay Siliconix
www.vishay.com
## **N-Channel 60 V (D-S) MOSFET**
## **FEATURES**
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PowerPAK [®] SO-8 Single<br>D • TrenchFET<br>D 8<br>D D6 7 • 100 % Rgg and UIS tested<br>5 •<br>1<br>2 S<br>3 S<br>1 4 S •<br>~~ , G<br>Top View Bottom View •<br>PRODUCT SUMMARY •<br>•<br>VDS (V) 60<br>RDS(on) max. ( ) at VGS = 10 V 0.0195 •<br>RDS(on) max. ( ) at VGS = 4.5 V 0.0250 •<br>Qg typ. (nC) 5.2<br>ID (A) 12 [a, g]<br>Configuration Single<br>——_—<br>ORDERING INFORMATION<br>Package PowerPAK SO-8<br>5.15 mm<br>6.15 mm<br>**----- End of picture text -----**<br>
- TrenchFET[®] Gen IV power MOSFET
- 100 % Rgg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **APPLICATIONS**
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D<br>• Synchronous rectification<br>• Primary side switch<br>• DC/DC converters<br>G<br>• Power supplies<br>• Motor drive control<br>• Battery and load switch S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>
Lead (Pb)-free and halogen-free Si7850ADP-T1-GE3
**ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) **PARAMETER SYMBOL LIMIT UNIT** ~~rn~~ Drain-source voltage VDS 60 V ~~ss~~ Gate-source voltage VGS ± 20 TC = 25 °C 12[a] Continuous drain current (TJ = 150 °C) TC = 70 °C ID 12[a] TA = 25 °C 10.3[b, c] ~~FSS|~~ TA = 70 °C ~~sd PO~~ 8.1[b, c] __ A Pulsed drain current (t = 100 μs) IDM 40 ~~|~~ Continuous source-drain diode current TTCA = 25 °C = 25 °C IS 3 12[b, c][a] Single pulse avalanche current IAS 15 L = 0.1 mH ~~S~~ Single pulse avalanche energy ~~e ————~~ EAS 11.3 mJ TC = 25 °C 35.7 Maximum power dissipation TC = 70 °C PD 22.9 W TA = 25 °C 3.6[b, c] ~~a~~ TA = 70 °C ~~sd PO~~ 2.3[b, c] Operating junction and storage temperature ran ~~|~~ ge ~~—~~ TJ, Tstg -55 to +150 °C ~~ae~~ Soldering recommendations (peak temperature)[c] 260 **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT** Maximum junction-to-ambient[b] t 10 s RthJA 25 35 °C/W Maximum junction-to-case (drain) Steady state RthJC 2.7 3.5
## **Notes**
a. Package limited
- b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
- e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W
- g. TC = 25 °C
S17-1506-Rev. A, 02-Oct-17
Document Number: 75480
**1**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Si7850ADP**
Vishay Siliconix
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www.vishay.com
|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|60|-|-|V|
|VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|33|-|mV/°C|
|VGS(th) temperature coefficient|VGS(th)/TJ||-|-4.8|-||
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|1|-|2.8|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|100|nA|
|Zero gate voltage drain current|IDSS|VDS= 60 V, VGS= 0 V|-|-|1|μA|
|||VDS= 60 V, VGS= 0 V, TJ= 70 °C|-|-|10||
|On-state drain currenta|ID(on)|VDS 5 V, VGS=10 V|10|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS=10 V, ID= 10 A|-|0.0160|0.0195||
|||VGS= 4.5 V, ID= 5 A|-|0.0200|0.0250||
|Forward transconductancea|gfs|VDS= 10 V, ID= 10 A|-|39|-|S|
|**Dynamicb**|||||||
|Input capacitance|Ciss|VDS= 30 V, VGS= 0 V, f = 1 MHz|-|790|-|pF|
|Output capacitance|Coss||-|330|-||
|Reverse transfer capacitance|Crss||-|14|-||
|Total gate charge|Qg|VDS= 30 V, VGS= 10 V, ID= 5 A|-|11.1|17|nC|
|||VDS= 30 V, VGS= 4.5 V, ID= 5 A|-|5.2|8||
|Gate-source charge|Qgs||-|2.2|-||
|Gate-drain charge|Qgd||-|1.1|-||
|Gate resistance|Rg|f = 1 MHz|0.1|0.6|1.2||
|Turn-on delay time|td(on)|VDD= 30 V, RL= 6, ID 5 A,<br>VGEN= 10 V, Rg= 1|-|7|15|ns|
|Rise time|tr||-|21|40||
|Turn-off delay time|td(off)||-|10|20||
|Fall time|tf||-|10|20||
|Turn-on delay time|td(on)|VDD= 30 V, RL= 6, ID 5 A,<br>VGEN= 4.5 V, Rg= 1|-|13|25||
|Rise time|tr||-|25|50||
|Turn-off delay time|td(off)||-|10|20||
|Fall time|tf||-|22|45||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous source-drain diode current|IS|TC= 25 °C|-|-|12|A|
|Pulse diode forward current|ISM||-|-|40||
|Body diode voltage|VSD|IS= 5 A, VGS= 0 V|-|0.79|1.2|V|
|Body diode reverse recovery time|trr|IF= 5 A, di/dt = 100 A/μs, TJ= 25 °C|-|30|60|ns|
|Body diode reverse recovery charge|Qrr||-|60|120|nC|
|Reverse recovery fall time|ta||-|15|-|ns|
|Reverse recovery rise time|tb||-|15|-||
## **Notes**
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._
S17-1506-Rev. A, 02-Oct-17
Document Number: 75480
**2**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Si7850ADP**
Vishay Siliconix
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www.vishay.com<br>**----- End of picture text -----**<br>
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
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Axis Title<br>40 10000<br>VGS = 10 V thru 4 V<br>30<br>1000<br>20<br>100<br>10<br>VGS = 3 V<br>0 10<br>0 1 2 3 4 5<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Output Characteristics**
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Axis Title<br>40 10000<br>30<br>1000<br>20<br>TC = 25 °C 100<br>10<br>TC = 125 °C TC = -55 °C<br>0 10<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Transfer Characteristics**
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Axis Title<br>0.04 10000<br>0.03<br>1000<br>VGS = 4.5 V<br>0.02<br>VGS = 10 V 100<br>0.01<br>0 10<br>0 10 20 30 40<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
**On-Resistance vs. Drain Current and Gate Voltage**
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Axis Title<br>10 10000<br>ID = 10 A<br>8<br>VDS = 30 V<br>1000<br>6<br>VDS = 15 V<br>4 V DS = 48 V<br>100<br>2<br>0 10<br>0 3 6 9 12<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Gate Charge**
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Axis Title<br>1200 10000<br>900<br>Ciss 1000<br>600<br>Coss<br>100<br>300<br>Crss<br>0 10<br>0 10 20 30 40 50 60<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>Capacitance<br>Axis Title<br>1.8 10000<br>1.6 ID = 10 A VGS = 10 V<br>1.4 1000<br>VGS = 4.5 V<br>1.2<br>1.0 100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
**On-Resistance vs. Junction Temperature**
S17-1506-Rev. A, 02-Oct-17
Document Number: 75480
**3**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Si7850ADP**
Vishay Siliconix
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www.vishay.com<br>**----- End of picture text -----**<br>
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
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Axis Title<br>100 10000<br>T J = 150 °C<br>10 1000<br>T J = 25 °C<br>1 100<br>0.1 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>
## **Source-Drain Diode Forward Voltage**
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Axis Title<br>2.2 10000<br>2.0<br>1.8 1000<br>1.6<br>1.4 100<br>ID = 250 μA<br>1.2<br>1.0 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>2nd line<br> (V)<br>2nd line VGS(th)<br>1st line 2nd line<br>**----- End of picture text -----**<br>
## **Threshold Voltage**
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Axis Title Axis Title<br>0.08 10000 50 10000<br>ID = 10 A<br>40<br>0.06<br>1000 1000<br>30<br>0.04<br>TJ = 125 °C 20<br>100 100<br>0.02<br>10<br>TJ = 25 °C<br>0 10 0 10<br>0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000<br>VGS - Gate-to-Source Voltage (V) Time (s)<br>2nd line 2nd line<br>On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient<br>Axis Title Axis Title<br>50 10000 100 Limited by RDS(on) (1) IDM Limited 10000<br>40 ID( ON) Limited<br>10<br>100 μs<br>1000 1000<br>30<br>1 ms<br>1<br>10 ms<br>20<br>100 100 ms100<br>0.1<br>10 1 s<br>T A = 25 °C 10 s<br>Single pulse DC<br>0 10 0.01 10<br>0 25 50 75 100 125 150 0.1 1 10 100<br>TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)<br>2nd line (1) VGS > minimum VGS at which RDS(on) is specified<br>2nd line 1st line 2nd line 2nd line Power (W) 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>2nd line 1st line 2nd line 2nd line 1st line 2nd line<br>Power (W)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Power, Junction-to-Case**
**Safe Operating Area, Junction-to-Ambient**
Document Number: 75480
S17-1506-Rev. A, 02-Oct-17
**4**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Si7850ADP** Vishay Siliconix
www.vishay.com
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
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40<br>~~!<br>30 ~<br>~<br>~<br>tn<br>20<br>Package limited ‘XN<br>10<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Note**
- a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit
**Current Derating[a]**
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1 a<br>p Duty Cycle = 0.5 eeLlllaltaeteteetetset——ttSTT Tit; = | | ee{| | TmeeaeTTee eeTTT<br>a cd<br>0.2<br>pe a TLs<br>0.1<br>0.1 TTLLLaay TillTT imET Eyil<br>a 0.05 | | “PLP.<br>PSa eri oe Pom otFH<br>a a aes a es 0 1" aul TTT<br>Pe 0.02 eT 2 ittaaesaemownal as it HHTT<br>eee mini mull<br>Single pulse<br>0.01 a all a a a i ill<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>2nd line<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1<br>Duty Cycle = 0.5<br>== —__ 6 = ===<br>CN ee ee me es 0 Be sO OO OQ QO QO OO<br>a es OO ce ON A DO A NG GOO<br>0.2<br>ee [ee] 0ee ee eee<br>0.1<br>herr PP PPT<br>0.1 Pa<br>—— 0.05 aes<br>oe| golSS ||<br>0.02<br>wR.en a eseeOO eeOR O Se ssQQeeSSOORS OOOSseeQOCS COGGS SO OO<br>Foe Single pulse oo oo eo<br>a<br>0.01<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>
## **Normalized Thermal Transient Impedance, Junction-to-Foot**
_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75480._
S17-1506-Rev. A, 02-Oct-17
Document Number: 75480
**5**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Package Information**
Vishay Siliconix
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www.vishay.com
## **PowerPAK[®] SO-8, (Single/Dual)**
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H L<br>E2 K<br>W E4<br>1 1<br>Z<br>2 2<br>D<br>3 3<br>4 4<br>L1<br>E3<br>A1 Backside View of Single Pad<br>H E2 K L<br>E4<br>2<br>E1 Detail Z 1<br>E<br>D1<br>2<br>3<br>D2<br>4<br>Notes<br>1. Inch will govern.<br>2 Dimensions exclusive of mold gate burrs. E3<br>3. Dimensions exclusive of mold flash and cutting burrs. Backside View of Dual Pad<br>θ θ<br>θ D4<br>M<br>e 2 D1 D D2 D5<br>b<br>θ<br>A<br>c<br>D4<br>D3 (2x)<br>D2 K1 D5<br>b<br>**----- End of picture text -----**<br>
|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|A|0.97|1.04|1.12|0.038|0.041|0.044|
|A1||-|0.05|0|-|0.002|
|b|0.33|0.41|0.51|0.013|0.016|0.020|
|c|0.23|0.28|0.33|0.009|0.011|0.013|
|D|5.05|5.15|5.26|0.199|0.203|0.207|
|D1|4.80|4.90|5.00|0.189|0.193|0.197|
|D2|3.56|3.76|3.91|0.140|0.148|0.154|
|D3|1.32|1.50|1.68|0.052|0.059|0.066|
|D4|0.57 typ.|||0.0225 typ.|||
|D5|3.98 typ.|||0.157 typ.|||
|E|6.05|6.15|6.25|0.238|0.242|0.246|
|E1|5.79|5.89|5.99|0.228|0.232|0.236|
|E2|3.48|3.66|3.84|0.137|0.144|0.151|
|E3|3.68|3.78|3.91|0.145|0.149|0.154|
|E4|0.75 typ.|||0.030 typ.|||
|e|1.27 BSC|||0.050 BSC|||
|K|1.27 typ.|||0.050 typ.|||
|K1|0.56|-|-|0.022|-|-|
|H|0.51|0.61|0.71|0.020|0.024|0.028|
|L|0.51|0.61|0.71|0.020|0.024|0.028|
|L1|0.06|0.13|0.20|0.002|0.005|0.008|
||0°|-|12°|0°|-|12°|
|W|0.15|0.25|0.36|0.006|0.010|0.014|
|M|0.125 typ.|||0.005 typ.|||
|ECN: S17-0173-Rev. L, 13-Feb-17<br>DWG: 5881|||||||
Document Number: 71655
Revison: 13-Feb-17
**1**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Application Note 826**
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## Vishay Siliconix
## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] SO-8 Single**
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0.260<br>(6.61)<br>0.150<br>(3.81)<br>0.024<br>(0.61)<br>0.026<br>(0.66)<br>0.050 0.032 0.040<br>(1.27) (0.82) (1.02)<br>0.154 (3.91) 0.174 (4.42)<br>0.050 (1.27)<br>**----- End of picture text -----**<br>
Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index
Return to Index
Document Number: 72599 Revision: 21-Jan-08
www.vishay.com 15
**Legal Disclaimer Notice** Vishay
www.vishay.com
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## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_
Revision: 01-Jan-2019
Document Number: 91000
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Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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