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SI7655ADN-T1-GE3
Power MOSFET, P Channel, 20 V, 40 A, 3000 µohm, PowerPAK 1212, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 57W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 3000µohm
- Gate Source Threshold Voltage Max: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.355 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si7655ADN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **P-Channel 20 V (D-S) MOSFET** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---|---| |**VDS (V)**|**RDS(on) (****) Max.**|**ID (A)**|**Qg (Typ.)**| |- 20|0.0036 at VGS= - 10 V|- 40e|72 nC| ||0.0048 at VGS= - 4.5 V|- 40e|| ||0.0090 at VGS= - 2.5 V|- 40e|| ## **PowerPAK 1212-8S** **==> picture [193 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3 mm 0.75 mm<br>S<br>S<br>1 S<br>3.3 mm 2 3 G<br>4<br>D<br>D<br>8 D<br>7 D<br>6<br>5<br>Bottom View<br>**----- End of picture text -----**<br> **Ordering Information:** Si7655ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) **==> picture [36 x 67] intentionally omitted <==** ## **FEATURES** - TrenchFET[®] Power MOSFET - Low Thermal Resistance PowerPAK[®] Package with Small Size and Low 0.75 mm Profile - 100 % R and UIS Tested g - Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Smart Phones, Tablet PCs, Mobile Computing S - Battery Switch - Load Switch G D P-Channel MOSFET ## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)| |---|---|---|---|---| |**Parameter**||**Symbol**|**Limit**|**Unit**| |Drain-Source Voltage||VDS|- 20|V| |Gate-Source Voltage||VGS|± 12|| |Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|- 40e|A| ||TC= 70 °C||- 40e|| ||TA= 25 °C||- 31a, b|| ||TA= 70 °C||- 25a, b|| |Pulsed Drain Current (t = 300 µs)||IDM|- 100|| |Continuous Source-Drain Diode Current|TC= 25 °C|IS|- 40e|| ||TA= 25 °C||- 4a, b|| |Avalanche Current|L = 0.1 mH|IAS|- 20|| |Single-Pulse Avalanche Energy||EAS|20|mJ| |Maximum Power Dissipation|TC= 25 °C|PD|57|W| ||TC= 70 °C||36|| ||TA= 25 °C||4.8a, b|| ||TA= 70 °C||3a, b|| |Operating Junction and Storage Temperature Range||TJ, Tstg|- 50 to 150|°C| |Soldering Recommendations (Peak Temperature)c, d|||260|| Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile ( _www.vishay.com/doc?73257_ ). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. - d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 www.vishay.com 1 For technical questions, contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7655ADN** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|||||| |---|---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Typical**|**Maximum**|**Unit**| |Maximum Junction-to-Ambienta, b<br>Maximum Junction-to-Case (Drain)||t10 s<br>SteadyState|RthJA<br>RthJC|21<br>1.7|26<br>2.2|°C/W| |Notes:||||||| |a.Surface mounted on 1" x 1" FR4 board.||||||| |b.Maximum under steady state conditions is 63 °C/W.||||||| |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|||||| |---|---|---|---|---|---|---|---|---|---|---|---| |**Parameter**||||**Symbol**|**Typical**||**Maximum**|||**Unit**|| |Maximum Junction-to-Ambienta, b||t10 s||RthJA|21||26|||°C/W|| |Maximum Junction-to-Case (Drain)||SteadyState||RthJC|1.7||2.2||||| |Notes:<br>a.Surface mounted on 1" x 1" FR4 board.<br>b.Maximum under steady state conditions is 63 °C/W.|||||||||||| |**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|||||||||||| |**Parameter**|**Symbol**||**Test Conditions**|||**Min.**||**Typ.**|**Max.**||**Unit**| |**Static**|||||||||||| |Drain-Source Breakdown Voltage|VDS||VGS= 0 V, ID= - 250µA|||- 20|||||V| |VDSTemperature Coefficient|VDS/TJ||ID= - 250 µA|||||- 12|||mV/<br>°C| |VGS(th)Temperature Coefficient|VGS(th)/TJ|||||||2.6|||| |Gate-Source Threshold Voltage|VGS(th)||VDS= VGS, ID= - 250µA|||- 0.5|||- 1.1||V| |Gate-Source Leakage|IGSS||VDS= 0 V, VGS= ± 12 V||||||± 100||nA| |Zero Gate Voltage Drain Current|IDSS||VDS= - 20 V, VGS= 0 V||||||- 1||µA| ||||VDS= - 20 V, VGS= 0 V, TJ= 55 °C||||||- 10||| |On-State Drain Currenta|ID(on)||VDS- 5 V, VGS= - 10 V|||- 20|||||A| |Drain-Source On-State Resistancea|RDS(on)||VGS= - 10 V, ID= - 20 A|||||0.0030|0.0036||| ||||VGS= - 4.5 V, ID= - 15 A|||||0.0039|0.0048||| ||||VGS= - 2.5 V, ID= - 10 A|||||0.0062|0.0090||| |Forward Transconductancea|gfs||VDS= - 15 V, ID= - 20 A|||||90|||S| |**Dynamicb**|||||||||||| |Input Capacitance|Ciss||VDS= - 10 V, VGS= 0 V, f = 1 MHz|||||6600|||pF| |Output Capacitance|Coss|||||||890|||| |Reverse Transfer Capacitance|Crss|||||||930|||| |Total Gate Charge|Qg||VDS= - 10 V, VGS= - 10 V, ID= - 20 A|||||150|225||nC| ||||VDS= - 10 V, VGS= - 4.5 V, ID= - 20 A|||||72|110||| |Gate-Source Charge|Qgs|||||||12|||| |Gate-Drain Charge|Qgd|||||||19|||| |Gate Resistance|Rg||f = 1 MHz|||0.5||2.6|5.2||| |Turn-On DelayTime|td(on)||VDD= - 10 V, RL= 1<br>ID - 10 A, VGEN= - 4.5 V, Rg= 1|||||45|90||ns| |Rise Time|tr|||||||45|90||| |Turn-Off DelayTime|td(off)|||||||100|200||| |Fall Time|tf|||||||35|70||| |Turn-On DelayTime|td(on)||VDD= - 10 V, RL= 1<br>ID - 10 A, VGEN= - 10 V, Rg= 1|||||13|25||| |Rise Time|tr|||||||10|20||| |Turn-Off DelayTime|td(off)|||||||110|220||| |Fall Time|tf|||||||25|50||| |**Drain-Source Body Diode Characteristics**|||||||||||| |Continuous Source-Drain Diode Current|IS||TC= 25 °C||||||- 40c||A| |Pulse Diode Forward Currenta|ISM||||||||- 100||| |BodyDiode Voltage|VSD||IF= - 10 A|||||- 0.75|- 1.2||V| |BodyDiode Reverse RecoveryTime|trr||IF= - 10 A, dI/dt = 100 A/µs, TJ= 25 °C|||||30|60||ns| |BodyDiode Reverse RecoveryCharge|Qrr|||||||17|26||nC| |Reverse RecoveryFall Time|ta|||||||15|||ns| |Reverse RecoveryRise Time|tb|||||||15|||| Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ www.vishay.com 2 Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7655ADN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [208 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS = 10 V thru 3 V<br>80<br>60<br>40 VGS = 2 V<br>20<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Output Characteristics** **==> picture [206 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16<br>12<br>TC = 25 °C<br>8<br>TC = 125 °C<br>4<br>TC = - 55 °C<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Transfer Characteristics** **==> picture [212 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 0.020<br>0.016<br>VGS = 2.5 V<br>0.012<br>0.008<br>VGS = 4.5 V<br>0.004<br>VGS = 10 V<br>0.000<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Drain Current and Gate Voltage** **==> picture [205 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ID = 20 A<br>VDS = 10 V<br>8<br>6<br>VDS = 5 V<br>4 VDS = 16 V<br>2<br>0<br>0 30 60 90 120 150<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [211 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 9000<br>7500<br>Ciss<br>6000<br>4500<br>3000<br>Coss<br>1500<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.4<br>ID = 20 A VGS = 10 V<br>1.3<br>VGS = 4.5 V<br>1.2<br>VGS = 2.5 V<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>C - Capacitance (pF)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Junction Temperature** Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7655ADN** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [476 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 100 0.020<br>ID = 20 A<br>T J = 150 °C 0.016<br>10<br>0.012<br>TJ = 25 °C 0.008<br>1<br>TJ = 125 °C<br>0.004<br>TJ = 25 °C<br>0.1 0.000<br>0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10<br>VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage<br>0.9 100<br>0.8<br>80<br>0.7<br>60<br>0.6<br>ID = 250 μA 40<br>0.5<br>20<br>0.4<br>0.3 0<br>- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000<br>TJ - Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power, Junction-to-Ambient<br> - On-Resistance (Ω)<br> - Source Current (A) IS DS(on)<br>R<br> (V)<br>GS(th)<br>V<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [206 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Limited by R DS(on) *<br>100<br>100 us<br>10<br>1 ms<br>10 ms<br>1<br>100 ms<br>1 s<br>10 s<br>0.1 TA = 25 °C DC<br>BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7655ADN** **==> picture [59 x 48] intentionally omitted <==** Vishay Siliconix ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [470 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 120 70<br>60<br>100<br>50<br>80<br>40<br>60<br>30<br>Package Limited<br>40<br>20<br>20<br>10<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating* Power, Junction-to-Case<br>Power (W)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. **==> picture [460 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2 Notes:<br>0.1 PDM<br>0.1<br>0.05 t 1<br>0.02 1. Duty Cycle, D = t 2 tt 12<br>2. Per Unit Base = RthJA = 63 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 www.vishay.com 5 For technical questions, contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7655ADN** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [455 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.1<br>0.0001 0.001 0.01 0.1<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62909._ www.vishay.com 6 Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: pmostechsupport@vishay.com This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **Case Outline for PowerPAK[®] 1212-8S** **==> picture [367 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> d 0.10 C D z D1<br>2X 8 7 6 5 5 6 7 8<br>d 0.10 C b e<br>2X 1 2 3 4 4 3 2 1<br>f 0.10 C<br>C<br>d 0.08 C<br>K1<br>E1<br>E<br>K<br>L<br>A<br>A3<br>A1<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.67|0.75|0.83|0.027|0.030|0.033| |A1|0|-|0.05|0|-|0.002| |A3|0.20 REF|||0.008 REF||| |b|0.30 BSC|||0.012 BSC||| |D|3.30 BSC|||0.130 BSC||| |D1|2.15|2.25|2.35|0.084|0.088|0.092| |E|3.30 BSC|||0.130 BSC||| |E1|1.60|1.70|1.80|0.063|0.067|0.071| |e|0.65 BSC|||0.026 BSC||| |K|0.76 TYP|||0.030 TYP||| |K1|0.41 TYP|||0.016 TYP||| |L|0.43 BSC|||0.017 BSC||| |z|0.525 TYP|||0.021 TYP||| |ECN: C12-0200-Rev. A, 12-Mar-12<br>DWG: 6008||||||| |||||||| ## **Note** - Millimeters will govern. Revision: 12-Mar-12 Document Number: 63919 **1** THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Application Note 826** **==> picture [60 x 50] intentionally omitted <==** ## Vishay Siliconix ## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] 1212-8 Single** **==> picture [343 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 0.152<br>(3.860)<br>0.039 0.068 0.010<br>(0.990) (1.725) (0.255)<br>0.016<br>(0.405)<br>0.026<br>(0.660)<br>0.025 0.030<br>(0.635) (0.760)<br>0.088 (2.235) 0.094 (2.390)<br>**----- End of picture text -----**<br> **==> picture [80 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> Return to Index<br>**----- End of picture text -----**<br> Return to Index Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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