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SI7615BDN-T1-GE3
Power MOSFET, P Channel, 20 V, 104 A, 0.0029 ohm, PowerPAK 1212, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: TrenchFET Gen IV
- Power Dissipation: 66W
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 66W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0029ohm
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 104A
- Drain Source On State Resistance: 0.0029ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.198 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si7615BDN** www.vishay.com Vishay Siliconix ## **P-Channel 20 V (D-S) MOSFET** ## **FEATURES** **==> picture [470 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> PowerPAK [®] 1212-8PT D<br>D D 7 8 • TrenchFET [®] Gen IV p-channel power MOSFET<br>D5 6 • 100 % Rg and UIS tested<br>• Material categorization:<br>for definitions of compliance please see<br>www.vishay.com/doc?99912<br>0 .75 mm 2 S1 APPLICATIONS S<br>3 S<br>1 4 S • Adaptor switch<br>G<br>Top View eo Bottom View • Battery switch<br>• Load switch G<br>PRODUCT SUMMARY<br>VDS (V) -20<br>RDS(on) max. ( ) at VGS = -10 V 0.0038<br>RDS(on) max. ( ) at VGS = -4.5 V 0.0050<br>RDS(on) max. ( ) at VGS = -2.5 V 0.0090 D<br>Qg typ. (nC) 48<br>ID (A) [a] -104<br>Configuration Single<br>ao ‘<br>ORDERING INFORMATION<br>Package PowerPAK 1212-8PT<br>Lead (Pb)-free and halogen-free Si7615BDN-T1-GE3<br>3. 3mm<br>3.3 mm<br>**----- End of picture text -----**<br> S G D P-Channel MOSFET ~~‘~~ ## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS -20 V ~~ee~~ Gate-source voltage VGS ± 12 TC = 25 °C -104[a] Continuous drain current (TJ = 150 °C) TC = 70 °C ID -83[a] TA = 25 °C -29[b, c] ~~SS~~ TA = 70 °C -23[b, c] A ~~a~~ Pulsed drain current (t = 100 μs) IDM -150 Continuous source-drain diode current TC = 25 °C IS -60[a] ~~ee~~ TA = 25 °C ~~eee~~ -4.7[b, c] Single pulse avalanche current IAS -22 L = 0.1 mH ~~a~~ Single pulse avalanche energy EAS 24 mJ TC = 25 °C 66 Maximum power dissipation TC = 70 °C PD 42 W TA = 25 °C 5.2[b, c] ~~aPo~~ TA = 70 °C 3.3[b, c] Operating junction and storage temperature range ~~—~~ TJ, Tstg -55 to 150 °C ~~i~~ Soldering recommendations (peak temperature)[c] 260 **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT** Maximum junction-to-ambient[b, f] t 10 s RthJA 19 24 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.3 1.9 ## **Notes** a. TC = 25 °C - b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8PT is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 60 °C/W S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7615BDN** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= -250 μA|-20|-|-|V| |VDStemperature coefficient|VDS/TJ|ID= -250 μA|-|-15|-|mV/°C| |VGS(th) temperature coefficient|VGS(th)/TJ||-|3.4|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID=-250 μA|-0.4|-|-1.5|V| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 12 V|-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VDS= -20 V, VGS= 0 V|-|-|-1|μA| |||VDS= -20 V, VGS= 0 V, TJ= 55 °C|-|-|-10|| |On-state drain currenta|ID(on)|VDS -5 V, VGS= -10 V|-30|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= -10 V, ID= -20 A|-|0.0029|0.0038|| |||VGS= -4.5 V, ID= -15 A|-|0.0037|0.0050|| |||VGS= -2.5 V, ID= -5 A|-|0.0060|0.0090|| |Forward transconductancea|gfs|VDS= -10 V, ID= -30 A|-|97|-|S| |**Dynamicb**||||||| |Input capacitance|Ciss|VDS= -10 V, VGS= 0 V, f = 1 MHz|-|4890|-|pF| |Output capacitance|Coss||-|735|-|| |Reverse transfer capacitance|Crss||-|705|-|| |Total gate charge|Qg|VDS= -10 V, VGS= -10 V, ID= -15 A|-|103|155|nC| |||VDS= -10 V, VGS= -4.5 V, ID= -15 A|-|48|72|| |Gate-source charge|Qgs||-|11|-|| |Gate-drain charge|Qgd||-|12|-|| |Gate resistance|Rg|f = 1 MHz|0.7|3.6|7.2|| |Turn-on delay time|td(on)|VDD= -10 V, RL= 1, ID -10 A,<br>VGEN= -4.5 V, Rg= 1|-|25|50|ns| |Rise time|tr||-|25|50|| |Turn-off delay time|td(off)||-|90|180|| |Fall time|tf||-|50|100|| |Turn-on delay time|td(on)|VDD= -10 V, RL= 1, ID -10 A,<br>VGEN= -10 V, Rg= 1|-|10|20|| |Rise time|tr||-|5|10|| |Turn-off delay time|td(off)||-|85|170|| |Fall time|tf||-|30|60|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous source-drain diode current|IS|TC= 25 °C|-|-|60|A| |Pulse diode forward current|ISM||-|-|150|| |Body diode voltage|VSD|IS= -5 A, VGS= 0 V|-|0.74|-1.1|V| |Body diode reverse recovery time|trr|IF= -10 A, di/dt = 100 A/μs, TJ= 25 °C|-|25|50|ns| |Body diode reverse recovery charge|Qrr||-|13|26|nC| |Reverse recovery fall time|ta||-|13|-|ns| |Reverse recovery rise time|tb||-|12|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7615BDN** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [188 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>VGS = 10 V thru 3 V<br>100<br>80<br>60<br>40<br>VGS = 2 V<br>20<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Output Characteristics** **==> picture [217 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 0.0120 10000<br>0.0090<br>1000<br>VGS = 2.5 V<br>0.0060<br>VGS = 4.5 V 100<br>0.0030<br>VGS = 10 V<br>0 10<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br>2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Drain Current and Gate Voltage** **==> picture [209 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>ID = 15 A<br>8<br>VDS = 10 V<br>1000<br>6<br>VDS = 5 V<br>VDS = 16 V<br>4<br>100<br>2<br>0 10<br>0 20 40 60 80 100 120<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [211 x 580] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10000<br>80<br>1000<br>60<br>40 TC = 25 °C<br>100<br>20 T C = 125 °C TC = -55 °C<br>0 10<br>0 0.5 1 1.5 2 2.5 3<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>Axis Title<br>10000 10000<br>C iss<br>1000<br>1000 C oss<br>Crss 100<br>100 10<br>0 5 10 15 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>Axis Title<br>1.6 10000<br>ID = 20 A<br>VGS = 10 V<br>1.4<br>VGS = 4.5 V<br>1000<br>1.2 V GS = 2.5 V<br>1.0<br>100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br> - Drain Current (A)<br>ID<br>C - Capacitance (pF)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7615BDN** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [188 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 TJ = 150 °C<br>1 TJJ = 25 °C<br>0.1<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> **==> picture [322 x 580] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 0.0200<br>ID = 20A<br>0.0150<br>1000<br>TJJ = 25 °C 0.0100<br>100<br>0.0050 TJ = 125 °C<br>TJ = 25 °C<br>10 0<br>0.8 1.0 0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>Axis Title<br>10000 50<br>40<br>1000<br>ID = 250 μAD = 250 μA = 250 μA 30<br>20<br>100<br>10<br>10 0<br>100 125 150 0.01 0.1 1 10 100<br>t - Time (s)<br>Single Pulse Power, Junction-to-Ambient<br>Axis Title<br>1000 10000<br>IDM limited<br>Limited by RDS(on) a<br>100ID(O N) limited 100 μs<br>1000<br>1 ms<br>10<br>10 ms<br>1<br>100 ms<br>100<br>10 s<br>T A = 25 °C, 1 s<br>0.1 single pulse<br>DC<br>BVDSS limited<br>0.01 10<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>Safe Operating Area, Junction-to-Ambient<br>2nd line<br>1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>1st line 2nd line 2nd line<br>P - Power (W)<br>1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **On-Resistance vs. Gate-to-Source Voltage** **==> picture [189 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>ID = 250 μAD = 250 μA = 250 μA<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [209 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 50 10000<br>40<br>1000<br>30<br>20<br>100<br>10<br>0 10<br>0.01 0.1 1 10 100 1000<br>t - Time (s)<br>Single Pulse Power, Junction-to-Ambient<br>P - Power (W)<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **Note** a. VGS > minimum VGS at which RDS(on) is specified S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7615BDN** Vishay Siliconix www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [475 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 120 10000 80 10000<br>100<br>60<br>80 1000 1000<br>60 40<br>40 100 100<br>20<br>20<br>0 10 0 10<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating [a] Power Derating, Junction-to-Case<br>1st line 2nd line 2nd line<br>P - Power (W)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si7615BDN** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [483 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> 1 10000<br>Duty cycle = 0.5<br>0.2 Notes<br>1000<br>0.1 PDM<br>0.1<br>0.05 t 1 t 2<br>t 1 100<br>1. Duty cycle, D = t2<br>0.02 2. Per unit base = R thJA = 60°C/W<br>3. T JM - T A = P DM Z thJA (t)<br>Single pulse 4. Surface mounted<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1 10000<br>Duty cycle = 0.5<br>0.2<br>1000<br>0.1<br>0.1 0.05<br>0.02 100<br>Single pulse<br>0.01 10<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78993._ S20-0808-Rev. A, 19-Oct-2020 Document Number: 78993 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at February 9, 2023
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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