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SI6463BDQ-T1-GE3
Power MOSFET, P Channel, 20 V, 6.2 A, 0.015 ohm, TSSOP, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-6.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-80
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.05W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TSSOP
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6.2A
- Drain Source On State Resistance: 0.015ohm
- Gate Source Threshold Voltage Max: 800mV
| Delivery and price | |
|---|---|
| Units per pack | 6000 |
| Price | 0.401 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si6463BDQ** **==> picture [59 x 48] intentionally omitted <==** ## Vishay Siliconix ## **P-Channel 1.8 V (G-S) MOSFET** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---| |**VDS (V)**|**RDS(on) (****)**|**ID (A)**| |- 20|0.015 at VGS= - 4.5 V|- 7.4| ||0.020 at VGS= - 2.5 V|- 6.3| ||<br>0.027 at VGS= - 1.8 V|- 5.5| ## **FEATURES** - **Halogen-free According to IEC 61249-2-21 Definition** - TrenchFET[®] Power MOSFET - Compliant to RoHS Directive 2002/95/EC **==> picture [43 x 94] intentionally omitted <==** **==> picture [246 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> TSSOP-8<br>D 1 8 D<br>S 2 Si6463BDQ 7 S<br>S 3 6 S<br>G 4 5 D<br>Top View<br>Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)<br>**----- End of picture text -----**<br> **==> picture [166 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> S*<br>G<br>* Source Pins 2, 3, 6 and 7<br>must be tied common.<br>D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br> |**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise|noted)|noted)|| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**10 s**|**Steady State**|**Unit**| |Drain-Source Voltage||VDS|- 20||V| |Gate-Source Voltage||VGS|± 8||| |Continuous Drain Current (TJ= 150 °C)a|TA= 25 °C|ID|- 7.4|- 6.2|A| ||TA= 70 °C||- 5.9|- 4.9|| |Pulsed Drain Current (10 µs Pulse Width)||IDM|- 30||| |Continuous Source Current (Diode Conduction)a||IS|- 1.35|- 0.95|| |Maximum Power Dissipationa|TA= 25 °C|PD|1.5|1.05|W| ||TA= 70 °C||1.0|0.67|| |Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150||°C| |**THERMAL RESISTANCE RATINGS**|||||| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**| |Maximum Junction-to-Ambienta|t10 s|RthJA|65|83|°C/W| ||SteadyState||100|120|| |Maximum Junction-to-Foot|Steady State|RthJF|46|56|| Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 www.vishay.com 1 ## **Si6463BDQ** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless|**SPECIFICATIONS**TJ= 25 °C, unless|otherwise noted||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**Static**||||||| |Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 µA|- 0.45||- 0.8|V| |Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 8 V|||± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= - 20 V, VGS= 0 V|||- 1|µA| |||VDS= - 20 V, VGS= 0 V, TJ= 70 °C|||- 10|| |On-State Drain Currenta|ID(on)|VDS= - 5 V, VGS= - 4.5 V|- 20|||A| |Drain-Source On-State Resistancea|RDS(on)|VGS- 4.5 V, ID= - 7.4 A||0.011|0.015|| |||VGS= - 2.5 V, ID= - 6.3 A||0.015|0.020|| |||VGS= - 1.8 V, ID= - 5.5 A||0.020|0.027|| |Forward Transconductancea|gfs|VDS= - 15 V, ID= - 7.4 A||34||S| |Diode Forward Voltagea|VSD|IS= - 1.3 A, VGS= 0 V||- 0.64|- 1.1|V| |**Dynamicb**||||||| |Total Gate Charge|Qg|VDS= - 10 V, VGS= - 5 V, ID= - 7.4 A||40|60|nC| |Gate-Source Charge|Qgs|||5.2||| |Gate-Drain Charge|Qgd|||8||| |Turn-On Delay Time|td(on)|VDD= - 10 V, RL= 15<br>ID - 1 A, VGEN= - 4.5 V, Rg= 6||35|55|ns| |Rise Time|tr|||40|60|| |Turn-Off Delay Time|td(off)|||190|300|| |Fall Time|tf|||90|150|| |Source-Drain Reverse Recovery Time|trr|IF= - 1.3 A, dI/dt = 100 A/µs||75|120|| Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [219 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGS = 5 V thru 2 V<br>24<br>18<br>1.5 V<br>12<br>6<br>0<br>0 1 2 3 4 5<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [215 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>24<br>18<br>12<br>TC = 125 °C<br>6<br>25 °C<br>- 55 °C<br>0<br>0.0 0.5 1.0 1.5 2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> www.vishay.com 2 Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 **Si6463BDQ** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [221 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> 0.030<br>0.024<br>VGS = 1.8 V<br>0.018 VGS = 2.5 V<br>VGS = 4.5 V<br>0.012<br>0.006<br>0.000<br>0 6 12 18 24 30<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current<br>5<br>VDS = 10 V<br>ID = 7.4 A<br>4<br>3<br>2<br>1<br>0<br>0 8 16 24 32 40<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>30<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>) <br>- On-Resistance (<br>DS(on)<br>R<br>- Gate-to-Source Voltage (V)<br> GS<br>V<br>- Source Current (A)<br>S<br>I<br>**----- End of picture text -----**<br> **==> picture [227 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> 5000<br>4000<br>Ciss<br>3000<br>2000<br>Coss<br>1000<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.6<br>VGS = 4.5 V<br>ID = 7.4 A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>0.06<br>0.05<br>0.04<br>ID = 7.4 A<br>0.03<br>0.02<br>0.01<br>0.00<br>0 1 2 3 4 5 6 7 8<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>C - Capacitance (pF)<br>- On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>) <br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 www.vishay.com 3 **Si6463BDQ** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [471 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4 200<br>160<br>0.2<br>ID = 250 µA<br>120<br>0.0<br>80<br>- 0.2<br>40<br>- 0.4 0<br>- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10<br>TJ - Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power, Junction-to-Ambient<br>Variance (V)<br>Power (W)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [470 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited<br>by R DS (on) *<br>1 ms<br>10<br>10 ms<br>1<br>100 ms<br>1 s<br>0.1<br>TC = 25 °C 10 s<br>Single Pulse DC<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Case<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 100 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>- Drain Current (A)<br>ID<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 **Si6463BDQ** **==> picture [59 x 48] intentionally omitted <==** Vishay Siliconix ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [470 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Foot<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72018._ Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 www.vishay.com 5 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at March 14, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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