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SI5948DU-T1-GE3
Dual MOSFET, Dual N Channel, 40 V, 6 A, 0.065 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.272 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si5948DU** VISHAY, ~~v~~ www.vishay.com Vishay Siliconix ## **Dual N-Channel 40 V (D-S) MOSFET** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---|---| |**VDS (V)**|**RDS(on) (****) MAX.**|**ID (A)**|**Qg (TYP.)**| |40|0.082 at VGS= 10 V|6a|2.2 nC| ||0.094 at VGS= 4.5 V|6a|| ## **FEATURES** - TrenchFET[®] power MOSFET - 100 % Rg and UIS tested - New thermally enhanced PowerPAK[®] ChipFET[®] package - Small footprint area - Low on-resistance **==> picture [170 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> PowerPAK [®] ChipFET [®] Dual<br>D2 D62 D71 D81<br>5<br>1<br>a 1 G 4 2 S3 2 G21 S1<br>Top View Bottom View<br>1.9 mm 30 . mm<br>**----- End of picture text -----**<br> - Thin 0.8 mm profile - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - DC/DC power supply **==> picture [175 x 49] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>**----- End of picture text -----**<br> ## **Marking Code:** CG **Ordering Information:** Si5948DU-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET N-Channel MOSFET S1 S2 |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Ce~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Ce~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Ce~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Ce~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Ce~~| |---|---|---|---|---| |**PARAMETER**<br>~~GG~~<br>~~OL~~||**SYMBOL**<br>~~GG~~|**LIMIT**<br>~~GG~~|**UNIT**<br>~~GG~~| |Drain-Source Voltage<br>~~GG~~<br>~~OL~~||VDS<br>~~GG~~|40<br>~~GG~~|V<br>~~GG~~<br>~~Se~~| |Gate-Source Voltage<br>~~OL~~<br>~~_—— Se~~||VGS<br>~~Se~~|± 20<br>~~Se~~|| |Continuous Drain Current (TJ= 150 °C)<br>~~OL~~<br>~~ES~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~_—— Se~~|TC= 25 °C<br>~~|~~<br>~~Se~~|ID<br>~~|~~<br>~~Se~~|6a<br>~~|~~<br>~~Se~~|A<br>~~Se~~| ||TC= 70 °C<br>~~|~~<br>~~|~~<br>~~Se~~||5.5<br>~~|~~<br>~~eee~~<br>~~Se~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~<br>~~Se~~||3.7b, c<br>~~|~~<br>~~eee~~<br>~~Pr~~<br>~~Se~~|| ||TA= 70 °C<br>~~|~~<br>~~|~~<br>~~Se~~||2.9b, c<br>~~eee~~<br>~~Pr~~<br>~~Se~~|| |Pulsed Drain Current(t = 100μs)<br>~~|~~<br>~~GQ~~<br>~~_—— Se~~||IDM<br>~~GQ~~<br>~~Se~~|10<br>~~Pr~~<br>~~GQ~~<br>~~Se~~|| |Continuous Source-Drain Diode Current<br>~~_—— Se~~<br>~~EN~~|TC= 25 °C<br>~~Se~~|IS<br>~~Se~~|5.8<br>~~Se~~|| ||TA= 25 °C<br>~~Se~~||1.7b, c<br>~~Se~~|| |Single Pulse Avalanche Current<br>~~_—— Se~~<br>~~EN~~|L = 0.1 mH<br>~~Se~~|IAS<br>~~Se~~|6<br>~~Se~~|| |Avalanche Energy<br>~~_—— Se~~<br>~~EN~~||EAS<br>~~Se~~|1.8<br>~~Se~~|mJ<br>~~Se~~| |Maximum Power Dissipation<br>~~EN~~<br>~~SS~~<br>~~|~~<br>~~|~~<br>~~yy~~|TC= 25 °C<br>~~|~~|PD<br>~~yy~~|7<br>~~PO~~|W| ||TC= 70 °C<br>~~|~~<br>~~|~~||4.4<br>~~PO~~<br>~~Po~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~||2b, c<br>~~PO~~<br>~~Po~~|| ||TA= 70 °C<br>~~|~~<br>~~yy~~||1.3b, c<br>~~Po~~|| |OperatingJunction and Storage Temperature Range<br>~~SS~~<br>~~yy~~<br>~~Yt~~||TJ, Tstg<br>~~yy~~<br>~~Yt~~|-55 to +150<br>~~He~~|°C<br>~~He~~| |SolderingRecommendations(Peak Temperature) d, e<br>~~Yt~~||~~Yt~~|260<br>~~He~~|| |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TYPICAL**|**MAXIMUM**|**UNIT**| |Maximum Junction-to-Ambientb, f|t5 s|RthJA|52|62|°C/W| |Maximum Junction-to-Case(Drain)|SteadyState|RthJC|15|18|| ## **Notes** a. Package limited. - b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. - d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5948DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA|40|-|-|V| |VDSTemperature Coefficient|VDS/TJ|ID= 250 μA|-|45.3|-|mV/°C| |VGS(th)Temperature Coefficient|VGS(th)/TJ||-|-4.1|-|| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA|1|-|2.5|V| |Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= 40 V, VGS= 0 V|-|-|-1|μA| |||VDS= 40 V, VGS= 0 V, TJ= 55 °C|-|-|-10|| |On-State Drain Currenta|ID(on)|VDS5 V, VGS= 10 V|5|-|-|A| |Drain-Source On-State Resistancea|RDS(on)|VGS= 10 V, ID= 5 A|-|0.065|0.082|| |||VGS= 4.5 V, ID= 3 A|-|0.074|0.094|| |Forward Transconductancea|gfs|VDS= 20 V, ID= 5 A|-|11|-|S| |**Dynamicb**||||||| |Input Capacitance|Ciss|VDS= 20 V, VGS= 0 V, f = 1 MHz|-|165|-|pF| |Output Capacitance|Coss||-|30|-|| |Reverse Transfer Capacitance|Crss||-|13|-|| |Total Gate Charge|Qg|VDS= 20 V, VGS= 10 V, ID= 10 A|-|3.3|5|nC| |||VDS= 20 V, VGS= 4.5 V, ID= 10 A|-|1.7|2.6|| |Gate-Source Charge|Qgs||-|0.53|-|| |Gate-Drain Charge|Qgd||-|0.63|-|| |Gate Resistance|Rg|f = 1 MHz|1.3|6.5|13|| |Turn-On Delay Time|td(on)|VDD= 20 V, RL= 4<br>ID 5 A, VGEN= 10 V, Rg= 1|-|5|10|ns| |Rise Time|tr||-|25|50|| |Turn-Off Delay Time|td(off)||-|7|15|| |Fall Time|tf||-|10|20|| |Turn-On Delay Time|td(on)|VDD= 20 V, RL= 4<br>ID 5 A, VGEN= 4.5 V, Rg= 1|-|11|20|| |Rise Time|tr||-|41|80|| |Turn-Off Delay Time|td(off)||-|9|20|| |Fall Time|tf||-|25|50|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous Source-Drain Diode Current|IS|TC= 25 °C|-|-|5.8|A| |Pulse Diode Forward Current (t = 100 μs)|ISM||-|-|10|| |Body Diode Voltage|VSD|IS= 5 A, VGS= 0 V|-|0.9|1.2|V| |Body Diode Reverse Recovery Time|trr|IF= 5 A, dI/dt = 100 A/μs, TJ= 25 °C|-|15|30|ns| |Body Diode Reverse Recovery Charge|Qrr||-|8|15|nC| |Reverse Recovery Fall Time|ta||-|9|-|ns| |Reverse Recovery Rise Time|tb||-|6|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5948DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [206 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VGS = 10 V thru 4 V<br>8<br>6<br>4<br>VGS = 3 V<br>2<br>0<br>0.0 0.5 1.0 1.5 2.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>0.1200<br>0.1000<br>VGS = 4.5 V<br>0.0800<br>0.0600<br>VGS = 10 V<br>0.0400<br>0.0200<br>0 2 4 6 8 10<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current and Gate Voltage<br>10<br>8 ID = 10 A VDS = 10 V<br>6 V DS = 20 V<br>4 VDS = 32 V<br>2<br>0<br>0.0 1.0 2.0 3.0 4.0<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Drain Current (A)ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> ## **On-Resistance vs. Drain Current and Gate Voltage** **==> picture [200 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16<br>12<br>TC = 25 °C<br>8<br>TC = 125 °C<br>4<br>TC = - 55 °C<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [100 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> VGS - Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> ## **Transfer Characteristics** **==> picture [206 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>Ciss<br>150<br>100<br>Coss<br>50<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-to-Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> ## **Capacitance** **==> picture [203 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>1.6 ID = 5 A VGS = 10 V<br>1.4<br>VGS = 4.5 V<br>1.2<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5948DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [202 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 TJ = 150 °C<br>1 TJ = 25 ° C<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [205 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.8<br>1.6<br>1.4 ID = 250 μA<br>1.2<br>1.0<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>Threshold Voltage<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [208 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 0.200<br>0.160 I D = 5 A<br>0.120<br>TJ = 125 °C<br>0.080<br>TJ = 25 °C<br>0.040<br>0.000<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>Single Pulse Power, Junction-to-Ambient<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [205 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by R DS(on) * IDM limited<br>10<br>ID limited<br>100 μs<br>1<br>1 ms<br>10 ms<br>0.1 100 ms<br>10 s<br>T A = 25 °C 1 s<br>BVDSS limited DC<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5948DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [471 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 8 10<br>8<br>6<br>Package Limited<br>6<br>4<br>4<br>2<br>2<br>0<br>0<br>0 25 50 75 100 125 150<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating [a] Power Derating<br> - Drain Current (A)<br>ID Power Dissipation (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5948DU** Vishay Siliconix ## www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [450 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 1 ————— Er —re<br>a Duty Cycle = 0.5 a er et tte<br>a 8es ee OO OO<br>0.2<br>pn<br>S ettler<br>0.1 A —<br>ESE 0.1 St Pom<br>aAeeNN LUI LTIL s ne<br>0.05 [ | ertl at th fe<br>P t 1 t =<br>por ea TTTEE uty cycle. D = t<br>0.02<br>| TT TTT ETT TTT Per unit Base = Rina = 105 °c<br>Single Pulse<br>0.01 / | Y 4. 3. Ty Surface - Ta = Mounted Pom Z tral”<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Ambient** **==> picture [450 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> Duty Cycle = 0.5<br>e 2 poworemos TUT LL LIELL<br>0.2<br>i 0 E e e nee<br>5 § — ————eee eet | |eaee<br>“eG 0.1<br>25 eg a<br>gE a 0.05<br>7 = 0.02 =<br>we sa LIN EI ELL<br>a [a] 01 Single J Pulse alee ee Sr eS<br>= -E a es<br>E , O O<br>ingle Fuse<br>= >noe “ SingleeePul Aeeeee ee ee<br>0.1<br>0.0001 0.001 0.01 0.1<br>104 103 Square Wave Pulse 10? Duration (s) 11<br>Transient<br>Impedance<br>Effective<br>Thermal<br>Normalized<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76424._ S16-1127-Rev. A, 06-Jun-16 Document Number: 76424 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAK[®] ChipFET[®] Case Outline** **==> picture [494 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>(8) (7) (6) (5)<br>Pin #1<br>indicator<br>(1) (2) (3) (4)<br>Side view of single Side view of dual<br>Z<br>e<br>b<br>D2 D2<br>H D1 K L Detail Z<br>D(1) D(2) D(3) G(4) SI(1) GI(2) S2(3) G2(4)<br>K1<br>E1 E3<br>D3<br>D(8) D(7) D(6) S(5) D1(8) D1(7) D2(6) D2(5)<br>K3<br>Backside view of single pad Backside view of dual pad<br>E<br>A<br>C<br>A1<br>L<br>K2<br>E2<br>H<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| |||**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.70|0.75|0.85|0.028|0.030|0.033| |A1|0|-|0.05|0|-|0.002| |b|0.25|0.30|0.35|0.010|0.012|0.014| |C|0.15|0.20|0.25|0.006|0.008|0.010| |D|2.92|3.00|3.08|0.115|0.118|0.121| |D1|1.75|1.87|2.00|0.069|0.074|0.079| |D2|1.07|1.20|1.32|0.042|0.047|0.052| |D3|0.20|0.25|0.30|0.008|0.010|0.012| |E|1.82|1.90|1.98|0.072|0.075|0.078| |E1|1.38|1.50|1.63|0.054|0.059|0.064| |E2|0.92|1.05|1.17|0.036|0.041|0.046| |E3|0.45|0.50|0.55|0.018|0.020|0.022| |e|0.65 BSC|||0.026 BSC||| |H|0.15|0.20|0.25|0.006|0.008|0.010| |K|0.25|-|-|0.010|-|-| |K1|0.30|-|-|0.012|-|-| |K2|0.20|-|-|0.008|-|-| |K3|0.20|-|-|0.008|-|-| |L|0.30|0.35|0.40|0.012|0.014|0.016| |C14-0630-Rev. E, 21-Jul-14<br>DWG: 5940||||||| ## **Note** - Millimeters will govern Revision: 21-Jul-14 Document Number: 73203 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] ChipFET[®] Dual** **==> picture [385 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> 2.700<br>(0.106)<br>0.300 0.650<br>0.350 (0.012) (0.026)<br>(0.014)<br>0.300<br>(0.012)<br>0.350<br>(0.014)<br>0.200<br>(0.008)<br>0.225 0.300 0.650<br>(0.009) (0.012) (0.026)<br>1.175 1.525<br>(0.046) (0.060)<br>1.900 (0.075)<br>1.050 (0.041)<br>**----- End of picture text -----**<br> Recommended Minimum Pads Dimensions in mm/(Inches) Note: This is Flipped Mirror Image Pin #1 Location is Top Left Corner ## Return to Index www.vishay.com 10 Document Number: 69949 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 _**© 2026 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2026 **1** THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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