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SI5936DU-T1-GE3
Dual MOSFET, Dual N Channel, 30 V, 6 A, 0.025 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 8Pins
- Channel Type: Dual N Channel
- Product Range: TrenchFET Series
- Qualification: -
- Transistor Case Style: PowerPAK ChipFET
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 10.4W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.025ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.258 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si5936DU** Vishay Siliconix www.vishay.com ## **Dual N-Channel 30 V (D-S) MOSFET** ## **FEATURES** **==> picture [207 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> PowerPAK [®] ChipFET [®] Dual<br>D2 D62 D71 D81<br>5<br>1<br>Os 1 G 4 2 S3 2 G21 S1<br>Top View Bottom View<br>Marking code: CF<br>PRODUCT SUMMARY<br>VDS (V) 30<br>RDS(on) max. ( ) at VGS = 10 V 0.030<br>RDS(on) max. ( ) at VGS = 4.5 V 0.040<br>Qg typ. (nC) 3.5<br>ID (A) [a] 6<br>Configuration Dual<br>mm<br>1.9 mm 30 .<br>**----- End of picture text -----**<br> ## **Marking code:** CF - TrenchFET[®] power MOSFET - Thermally enhanced PowerPAK[®] ChipFET[®] package - Small footprint area - Low on-resistance - Thin 0.8 mm profile - 100 % Rg tested - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Network - System power DC/DC **==> picture [167 x 82] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>S1 S2<br>N-Channel MOSFET N-Channel MOSFET<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** Package PowerPAK ChipFET Lead (Pb)-free and halogen-free Si5936DU-T1-GE3 |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Se~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Se~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Se~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Se~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~Se~~| |---|---|---|---|---| |**PARAMETER**<br>~~Se~~<br>~~=~~<br>~~rr~~||**SYMBOL**<br>~~Se~~<br>~~rr~~|**LIMIT**<br>~~Se~~<br>~~rr~~|**UNIT**<br>~~Se~~<br>~~rr~~| |Drain-source voltage<br>~~=~~<br>~~rr~~||VDS<br>~~rr~~|30<br>~~rr~~|V<br>~~rr~~| |Gate-source voltage<br>~~=~~<br>~~rr~~||VGS<br>~~rr~~|± 20<br>~~rr~~|| |Continuous drain current (TJ= 150 °C)<br>~~=~~<br>~~|~~<br>~~ES~~|TC= 25 °C<br>~~rr~~<br>~~|~~<br>~~ES~~|ID<br>~~rr~~<br>|6a<br>~~rr~~<br>~~Po~~<br>~~SS~~|A<br>~~rr~~<br>~~SS~~| ||TC= 70 °C<br>~~|~~<br>~~ES~~||6a<br>~~Po~~<br>~~SS~~|| ||TA= 25 °C<br>~~|~~<br>~~ES~~||6a, b, c<br>~~Po~~<br>~~SS~~|| ||TA= 70 °C<br>~~ES~~||5.3b, c<br>~~SS~~|| |Pulsed drain current(t = 300μs)<br>~~ES~~<br>~~a~~<br>~~eeeeo~~||IDM<br><br>~~eo~~|25<br>~~SS~~<br>~~eo~~|| |Continuous source-drain diode current<br>~~ES~~<br>~~a~~|TC= 25 °C<br>~~ES~~<br>~~eeeeo~~|IS<br> <br>~~eo~~|6a<br>~~SS~~<br>~~eo~~|| ||TA= 25 °C<br>~~ES ~~<br>~~eeeeo~~||1.9b, c<br> ~~SS~~<br>~~eo~~|| |Maximum power dissipation<br>~~a~~<br>~~|~~<br>~~i~~<br>~~ee~~|TC= 25 °C<br>~~eeeeo~~<br>~~|~~|PD<br>~~eo~~|10.4<br>~~eo~~<br>~~Po~~|W| ||TC= 70 °C<br>~~|~~||6.7<br>~~Po~~|| ||TA= 25 °C<br>~~|~~||2.3b, c<br>~~Po~~|| ||TA= 70 °C<br>~~|~~||1.5b, c<br>~~Po~~|| |Operating junction and storage temperature range<br>~~ee~~||TJ,Tstg|-55 to +150|°C| |Solderingrecommendations(peak temperature) d, e<br>~~ee~~|||260|| ## **Notes** a. Package limited - b. Surface mounted on 1" x 1" FR4 board c. t = 5 s - d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components - f. Maximum under steady state conditions is 105 °C/W S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5936DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|30|-|-|V| |VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|34|-|mV/°C| |VGS(th)temperature coefficient|VGS(th)/TJ||-|-4.4|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|1.2|-|2.2|V| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VDS= 30 V, VGS= 0 V|-|-|1|μA| |||VDS= 30 V, VGS= 0 V, TJ= 55 °C|-|-|10|| |On-state drain currenta|ID(on)|VDS5 V, VGS= 10 V|20|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= 10 V, ID= 5 A|-|0.025|0.030|| |||VGS= 4.5 V, ID= 4 A|-|0.032|0.040|| |Forward transconductancea|gfs|VDS= 15 V, ID= 5 A|-|11|-|S| |**Dynamicb**||||||| |Input capacitance|Ciss|VDS= 15 V, VGS= 0 V, f = 1 MHz|-|320|-|pF| |Output capacitance|Coss||-|70|-|| |Reverse transfer capacitance|Crss||-|38|-|| |Total gate charge|Qg|VDS= 15 V, VGS= 10 V, ID= 7 A|-|7|11|nC| |||VDS= 15 V, VGS= 4.5 V, ID= 7 A|-|3.5|5.3|| |Gate-source charge|Qgs||-|1|-|| |Gate-drain charge|Qgd||-|1.3|-|| |Gate resistance|Rg|f = 1 MHz|0.8|4|8|| |Turn-on delay time|td(on)|VDD= 15 V, RL= 2.8<br>ID 5.3 A, VGEN= 4.5 V, Rg= 1|-|15|30|ns| |Rise time|tr||-|65|130|| |Turn-off delay time|td(off)||-|15|30|| |Fall time|tf||-|10|20|| |Turn-on delay time|td(on)|VDD= 15 V, RL= 2.8<br>ID 5.3 A, VGEN= 10 V, Rg= 1|-|5|10|| |Rise time|tr||-|12|25|| |Turn-off delay time|td(off)||-|12|25|| |Fall time|tf||-|6|15|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous source-drain diode current|IS|TC= 25 °C|-|-|6|A| |Pulse diode forward current|ISM||-|-|25|| |Body diode voltage|VSD|IS= 5.3 A, VGS= 0 V|-|0.8|1.2|V| |Body diode reverse recovery time|trr|IF= 5.3 A, di/dt = 100 A/μs,<br>TJ= 25 °C|-|11|20|ns| |Body diode reverse recovery charge|Qrr||-|5|10|nC| |Reverse recovery fall time|ta||-|6|-|ns| |Reverse recovery rise time|tb||-|5|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5936DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [199 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>VGS = 10 V thru 5 V<br>20 VGS = 4 V<br>15<br>10<br>5 VGS = 3 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [198 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4 TC = 25 °C<br>2 TC = 125 °C<br>TC = - 55 °C<br>0<br>0.0 1.0 2.0 3.0 4.0<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Transfer Characteristics** **==> picture [202 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 0.10<br>0.08<br>0.06<br>0.04 VGS = 4.5 V<br>0.02 V GS = 10 V<br>0<br>0 10 20 30 40<br>ID - Drain Current (A)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [192 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Drain Current and Gate Voltage<br>**----- End of picture text -----**<br> **==> picture [195 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8 ID = 7 A<br>VDS = 15 V<br>6 VDS = 7.5 V VDS = 24 V<br>4<br>2<br>0<br>0 2 4 6 8<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [203 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>400<br>Ciss<br>300<br>200<br>100 Coss<br>Crss<br>0<br>0 6 12 18 24 30<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.8<br>VGS = 10V<br>1.6 ID = 5 A<br>1.4<br>VGS = 4.5 V<br>1.2<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>C - Capacitance (pF)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5936DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [199 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>T J = 150 °C<br>TJ = 25 °C<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A) IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [204 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.8<br>1.6<br>1.4<br>ID = 250 μA<br>1.2<br>1.0<br>0.8<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [202 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 0.10<br>ID = 5 A<br>0.08<br>0.06<br>TJ = 125 °C<br>0.04<br>0.02 T J = 25 ° C<br>0<br>0.0 2.0 4.0 6.0 8.0 10.0<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>Single Pulse Power (Junction-to-Ambient)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [203 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by R DS(on) *<br>10<br>100 μs<br>1 1 ms<br>10 ms<br>0.1 TA = 25 °C 100 ms 1 s<br>10 s<br>DC<br>BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5936DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [199 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>12<br>8<br>Package Limited<br>4<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating [ a]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [199 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Power Derating<br>Power Dissipation (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si5936DU** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [437 x 375] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 P DM<br>0.05 t1<br>0.02 1. Duty Cycle, D = 2. Per Unit Base = Rt2 tt th12 JA = 105 °C/W<br>3. TJM - TA = PDM Z thJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.05<br>0.1<br>Single Pulse<br>0.02<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62804._ S12-2729-Rev. A, 12-Nov-12 Document Number: 62804 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAK[®] ChipFET[®] Case Outline** **==> picture [494 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>(8) (7) (6) (5)<br>Pin #1<br>indicator<br>(1) (2) (3) (4)<br>Side view of single Side view of dual<br>Z<br>e<br>b<br>D2 D2<br>H D1 K L Detail Z<br>D(1) D(2) D(3) G(4) SI(1) GI(2) S2(3) G2(4)<br>K1<br>E1 E3<br>D3<br>D(8) D(7) D(6) S(5) D1(8) D1(7) D2(6) D2(5)<br>K3<br>Backside view of single pad Backside view of dual pad<br>E<br>A<br>C<br>A1<br>L<br>K2<br>E2<br>H<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| |||**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.70|0.75|0.85|0.028|0.030|0.033| |A1|0|-|0.05|0|-|0.002| |b|0.25|0.30|0.35|0.010|0.012|0.014| |C|0.15|0.20|0.25|0.006|0.008|0.010| |D|2.92|3.00|3.08|0.115|0.118|0.121| |D1|1.75|1.87|2.00|0.069|0.074|0.079| |D2|1.07|1.20|1.32|0.042|0.047|0.052| |D3|0.20|0.25|0.30|0.008|0.010|0.012| |E|1.82|1.90|1.98|0.072|0.075|0.078| |E1|1.38|1.50|1.63|0.054|0.059|0.064| |E2|0.92|1.05|1.17|0.036|0.041|0.046| |E3|0.45|0.50|0.55|0.018|0.020|0.022| |e|0.65 BSC|||0.026 BSC||| |H|0.15|0.20|0.25|0.006|0.008|0.010| |K|0.25|-|-|0.010|-|-| |K1|0.30|-|-|0.012|-|-| |K2|0.20|-|-|0.008|-|-| |K3|0.20|-|-|0.008|-|-| |L|0.30|0.35|0.40|0.012|0.014|0.016| |C14-0630-Rev. E, 21-Jul-14<br>DWG: 5940||||||| ## **Note** - Millimeters will govern Revision: 21-Jul-14 Document Number: 73203 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] ChipFET[®] Dual** **==> picture [385 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> 2.700<br>(0.106)<br>0.300 0.650<br>0.350 (0.012) (0.026)<br>(0.014)<br>0.300<br>(0.012)<br>0.350<br>(0.014)<br>0.200<br>(0.008)<br>0.225 0.300 0.650<br>(0.009) (0.012) (0.026)<br>1.175 1.525<br>(0.046) (0.060)<br>1.900 (0.075)<br>1.050 (0.041)<br>**----- End of picture text -----**<br> Recommended Minimum Pads Dimensions in mm/(Inches) Note: This is Flipped Mirror Image Pin #1 Location is Top Left Corner ## Return to Index www.vishay.com 10 Document Number: 69949 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 _**© 2026 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2026 **1** THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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