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SI5517DU-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6 A, 6 A, 0.032 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: Trench Series
- Qualification: -
- Transistor Case Style: PowerPAK
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.3W
- Power Dissipation P Channel: 2.3W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.032ohm
- Drain Source On State Resistance P Channel: 0.032ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.735 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si5517DU** **==> picture [59 x 49] intentionally omitted <==** ## Vishay Siliconix ## **N- and P-Channel 20-V (D-S) MOSFET** **==> picture [239 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> PRODUCT SUMMARY<br>VDS RDS(on) ( Ω ) ID (A) [a] Qg<br>0.039 at VGS = 4.5 V 6<br>N-Channel 20 0.045 at VGS = 2.5 V 6 6 nc<br>0.055 at VGS = 1.8 V 6<br>0.072 at VGS = - 4.5 V - 6<br>P-Channel - 20 0.100 at VGS = - 2.5 V - 6 5.5 nc<br>0.131 at VGS = - 18 V - 6<br>PowerPAK ChipFET Dual<br>1<br>S1 2 Marking Code<br>EA XXX<br>D1 G1 3 Lot Traceabilityand Date Code<br>8 S2 4<br>D1 Part # Code<br>7 G2<br>D2<br>6<br>D2<br>5<br>Bottom View<br>**----- End of picture text -----**<br> ## **FEATURES** - **Halogen-free** - TrenchFET[®] Power MOSFETs - New Thermally Enhanced PowerPAK[®] **RoHS** ChipFET[®] Package **COMPLIANT** - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile ## **APPLICATIONS** - Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits **==> picture [181 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> D1 S2<br>G2<br>G1<br>S1 D2<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> **==> picture [240 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free)<br>**----- End of picture text -----**<br> ## **ABSOLUTE MAXIMUM RATINGS** TA ## |**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**N-Channel**|**P-Channel**|**Unit**| |Drain-Source Voltage||VDS|20|- 20|V| |Gate-Source Voltage||VGS|± 8||| |Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|6a|-6a|A| ||TC= 70 °C||6a|-6a|| ||TA= 25 °C||7.2b, c|-4.6b, c|| ||TA= 70 °C||5.8b, c|-3.7b, c|| |Pulsed Drain Current||IDM|20|- 15|| |Source-Drain Current Diode Current|TC= 25 °C|IS|6.9|- 6.9|| ||TA= 25 °C||1.9b, c|-1.9b, c|| |Maximum Power Dissipation|TC= 25 °C|PD|8.3|8.3|W| ||TC= 70 °C||5.3|5.3|| ||TA= 25 °C||2.3b, c|2.3b, c|| ||TA= 70 °C||1.5b, c|1.5b, c|| |OperatingJunction and Storage Temperature Range||TJ, Tstg|- 55 to 150||°C| |Soldering Recommendations (Peak Temperature)d, e|||260||| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---|---|---| |**Parameter**||**Symbol**|**N-Channel**||**P-Channel**||**Unit**| ||||**Typ.**|**Max.**|**Typ.**|**Max.**|| |Maximum Junction-to-Ambientb, f|t≤5 s|RthJA|45|55|45|55|°C/W| |Maximum Junction-to-Case(Drain)|SteadyState|RthJC|12|15|12|15|| Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. - d. See Solder Profile ( _http://www.vishay.com/ppg?73257_ ). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. - e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. - f. Maximum under Steady State conditions is 105 °C/W for both channels. Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 **Si5517DU** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min.**|**Typ.a**|**Max.**|**Unit**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 1 mA|N-Ch<br>P-Ch|20|||V| |||VGS= 0 V, ID= - 1 mA||- 20|||| |VDSTemperature Coefficient|ΔVDS/TJ|ID= 250 µA|N-Ch<br>P-Ch||17||mV/°C| |||ID= - 250 µA|||- 20||| |VGS(th)Temperature Coefficient|ΔVGS(th)/TJ|ID= 250 µA|N-Ch<br>P-Ch||- 2.6||| |||ID= - 250 µA|||2.4||| |Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|N-Ch<br>P-Ch|0.4||1|V| |||VDS= VGS, ID= - 250 µA||- 0.4||- 1|| |Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 8 V|N-Ch<br>P-Ch|||100|nA| |||||||- 100|| |Zero Gate Voltage Drain Current|IDSS|VDS= 20 V, VGS= 0 V|N-Ch<br>P-Ch|||1|µA| |||VDS= - 20 V, VGS= 0 V||||- 1|| |||VDS= 20 V, VGS= 0 V, TJ= 55 °C|N-Ch<br>P-Ch|||10|| |||VDS= - 20 V, VGS= 0 V, TJ= 55 °C||||- 10|| |On-State Drain Currentb|ID(on)|VDS≤5 V, VGS= 4.5 V|N-Ch<br>P-Ch|20|||A| |||VDS≤- 5 V, VGS= - 4.5 V||- 15|||| |Drain-Source On-State Resistanceb|RDS(on)|VGS= 4.5 V, ID= 4.4 A|N-Ch<br>P-Ch||0.032|0.039|Ω| |||VGS= - 4.5 V, ID= - 3.3 A|||0.060|0.072|| |||VGS= 2.5 V, ID= 4.1 A|N-Ch<br>P-Ch||0.037|0.045|| |||VGS= - 2.5 V, ID= - 2.8 A|||0.083|0.100|| |||VGS= 1.8 V, ID= 1.8 A|N-Ch<br>P-Ch||0.0455|0.055|| |||VGS= - 1.8 V, ID= - 0.76 A|||0.108|0.131|| |Forward Transconductanceb|gfs|VDS= 10 V, ID= 4.4 A|N-Ch<br>P-Ch||22||S| |||VDS= - 10 V, ID= - 3.3 A|||9||| |**Dynamica**|||||||| |Input Capacitance|Ciss|N-Channel<br>VDS= 10 V, VGS= 0 V, f = 1 MHz<br>P-Channel<br>VDS= - 10 V, VGS= 0 V, f = 1 MHz|N-Ch<br>P-Ch||520||pF| ||||||455||| |Output Capacitance|Coss||N-Ch<br>P-Ch||100||| ||||||105||| |Reverse Transfer Capacitance|Crss||N-Ch<br>P-Ch||60||| ||||||65||| |Total Gate Charge|Qg|VDS= 10 V, VGS= 8 V, ID= 4.4 A|N-Ch<br>P-Ch||10.5|16|nC| |||VDS= - 10 V, VGS= - 8 V, ID= - 4.6 A|||9.1|14|| |||N-Channel<br>VDS= 10 V, VGS= 4.5 V, ID= 4.4 A<br>P-Channel<br>VDS= - 10 V, VGS= - 4.5 V, ID= - 1.8 A|N-Ch<br>P-Ch||6|9|| ||||||5.5|8.5|| |Gate-Source Charge|Qgs||N-Ch<br>P-Ch||0.91||| ||||||0.75||| |Gate-Drain Charge|Qgd||N-Ch<br>P-Ch||0.7||| ||||||1.5||| |Gate Resistance|Rg|f = 1 MHz|N-Ch<br>P-Ch||1.9||Ω| ||||||8||| www.vishay.com 2 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 **Si5517DU** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min.**|**Typ.a**|**Max.**|**Unit**| |**Dynamica**|||||||| |Turn-On Delay Time|td(on)|N-Channel<br>VDD= 10 V, RL= 2.8Ω<br>ID ≅3.6 A, VGEN= 4.5 V, Rg= 1Ω<br>P-Channel<br>VDD= - 10 V, RL= 2.7Ω<br>ID ≅- 3.7 A, VGEN= - 4.5 V, Rg= 1Ω|N-Ch<br>P-Ch||20|30|ns| ||||||8|15|| |Rise Time|tr||N-Ch<br>P-Ch||65|100|| ||||||35|55|| |Turn-Off Delay Time|td(off)||N-Ch<br>P-Ch||40|60|| ||||||40|60|| |Fall Time|tf||N-Ch<br>P-Ch||10|15|| ||||||55|85|| |Turn-On Delay Time|td(on)|N-Channel<br>VDD= 10 V, RL= 2.8Ω<br>ID ≅3.6 A, VGEN= 8 V, Rg= 1Ω<br>P-Channel<br>VDD= - 10 V, RL= 2.7Ω<br>ID ≅- 3.7 A, VGEN= - 8 V, Rg= 1Ω|N-Ch<br>P-Ch||5|10|| ||||||5|10|| |Rise Time|tr||N-Ch<br>P-Ch||12|20|| ||||||15|25|| |Turn-Off Delay Time|td(off)||N-Ch<br>P-Ch||26|40|| ||||||30|45|| |Fall Time|tf||N-Ch<br>P-Ch||8|15|| ||||||45|70|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode<br>Current|IS|TC= 25 °C|N-Ch<br>P-Ch|||6.9|A| |||||||- 6.9|| |Pulse Diode Forward Currenta|ISM||N-Ch<br>P-Ch|||20|| |||||||- 15|| |Body Diode Voltage|VSD|IS= 1.2 A, VGS= 0 V|N-Ch<br>P-Ch||0.8|1.2|V| |||IS= - 1.0 A, VGS= 0 V|||- 0.8|- 1.2|| |Body Diode Reverse Recovery Time|trr|N-Channel<br>IF= 1.2 A, dI/dt = 100 A/µs, TJ= 25 °C<br>P-Channel<br>IF= - 1 A, dI/dt = 100 A/µs, TJ= 25 °C|N-Ch<br>P-Ch||45|70|ns| ||||||30|60|| |Body Diode Reverse Recovery Charge|Qrr||N-Ch<br>P-Ch||21|32|nC| ||||||15|30|| |Reverse Recovery Fall Time|ta||N-Ch<br>P-Ch||29||ns| ||||||11||| |Reverse Recovery Rise Time|tb||N-Ch<br>P-Ch||16||| ||||||19||| Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 3 **Si5517DU** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [219 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VGS = 2.5 V thru 5 V<br>16<br>VGS = 2.5 V<br>VGS = 2 V<br>12 V GS = 1.5 V<br>8<br>4<br>VGS = 1 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [225 x 409] intentionally omitted <==** **----- Start of picture text -----**<br> 0.08<br>0.07 VGS = 4.5 V<br>0.06<br>0.05<br>VGS = 2.5 V<br>0.04<br>0.03<br>VGS = 1.8 V<br>0.02<br>0.01<br>0.00<br>0 4 8 12 16 20<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current and Gate Voltage<br>8<br>ID = 4.4 A<br>6<br>VDS = 10 V<br>4<br>VDS = 16 V<br>2<br>0<br>0 3 6 9 12<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>) Ω<br>- On-Resistance (m<br>DS(on)<br>R<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [223 x 412] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>TC = 125 °C<br>2 25 °C<br>- 55 °C<br>0<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>800<br>600<br>Ciss<br>400<br>200<br>Coss<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>- Drain Current (A)<br>ID<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [222 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6<br>VGS = 4.5 V<br>1.4 I D = 4.4 A<br>1.2<br>1.0<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br> - On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 **Si5517DU** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [218 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>- Source Current (A)<br>IS<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [227 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 0.08<br>ID = 4.4 A<br>0.07<br>0.06<br>125 °C<br>0.05<br>25 °C<br>0.04<br>0.03<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>) Ω<br>- Drain-to-Source On-Resistance (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [221 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 0.9<br>0.8<br>ID = 250 µA<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>Threshold Voltage<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [218 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>30<br>20<br>10<br>0<br>0.001 0.01 0.1 1 10 100 600<br>Time (s)<br>Power (W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** **==> picture [213 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by RDS(on)* IDM limited<br>10 ID(on) limited 100 µs<br>1 ms<br>1<br>10 ms<br>100 ms<br>1 s<br>0.1<br>TA = 25 °C 10 s<br>Single Pulse DC<br>BVDSS limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br>- Drain Current (A)<br>I D<br>**----- End of picture text -----**<br> Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 5 **Si5517DU** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [484 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 15 10<br>12 8<br>9 6<br>6 Package Limited 4<br>3 2<br>0 0<br>0 25 50 75 100 125 150 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating* Power Derating<br> - Drain Current (A)<br>ID Power Dissipation (W)<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 **Si5517DU** **==> picture [60 x 50] intentionally omitted <==** Vishay Siliconix ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [471 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 87 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse<br>4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 7 **Si5517DU** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [225 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VGS = 5 V 2.5 V<br>3 V<br>4.5 V<br>12 4 V<br>3.5 V<br>9 2 V<br>6<br>1.5 V<br>3<br>1 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>0.30<br>VGS = 1.8 V<br>0.25<br>0.20<br>VGS = 2.5 V<br>0.15<br>0.10<br>VGS = 4.5 V<br>0.05<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current and Gate Voltage<br>8<br>ID = 4.6 A<br>6<br>VDS = 10 V<br>4<br>VDS = 16 V<br>2<br>0<br>0 3 6 9 12<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>- Drain Current (A)<br>I D<br>) Ω<br>- On-Resistance (<br>DS(on)<br>R<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [228 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2 T C = 125 °C<br>1 T C = 25 °C<br>TC = - 55 °C<br>0<br>0.0 0.5 1.0 1.5 2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>800<br>600<br>Ciss<br>400<br>200<br>Coss<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.5<br>VGS = 4.5 V<br>1.4 I D = 3.3 A<br>1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature ( °C)<br>On-Resistance vs. Junction Temperature<br>- Drain Current (A)<br>ID<br>C - Capacitance (pF)<br> - On-Resistance<br>(Normalized)<br> DS(on)<br>R<br>**----- End of picture text -----**<br> www.vishay.com Document Number: 73529 S-81449-Rev. B, 23-Jun-08 8 **Si5517DU** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [491 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 10 0.20<br>ID = 4.6 A<br>0.16<br>TJ = 150 °C<br>0.12<br>TJ = 25 °C TA = 125 °C<br>0.08<br>TA = 25 °C<br>1 0.04<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5<br>VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage<br>0.8 40<br>0.7 ID = 250 µA<br>30<br>0.6<br>20<br>0.5<br>10<br>0.4<br>0.3 0<br>- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600<br>TJ - Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power, Junction-to-Ambient<br>) Ω<br>- Source Current (A)<br>IS<br>- Drain-to-Source On-Resistance (<br>DS(on)<br>R<br> (V)<br>GS(th)<br>V Power (W)<br>**----- End of picture text -----**<br> **==> picture [213 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>IDM limited<br>Limited by RDS(on)*<br>10 ID(on) limited<br>1 ms<br>1<br>10 ms<br>100 ms<br>1 s<br>0.1 10 s<br>DC<br>TA = 25 °C<br>Single Pulse BVDSS limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS minimum V> GS at which R DS(on) is specified<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Case** Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 9 **Si5517DU** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>Package Limited<br>6<br>4<br>2<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating*<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [223 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Power Derating<br>Power Dissipation (W)<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73529 S-81449-Rev. B, 23-Jun-08 **Si5517DU** **==> picture [60 x 50] intentionally omitted <==** Vishay Siliconix ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [470 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 87 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse<br>4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73529._ Document Number: 73529 S-81449-Rev. B, 23-Jun-08 www.vishay.com 11 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAK[®] ChipFET[®] Case Outline** **==> picture [494 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>(8) (7) (6) (5)<br>Pin #1<br>indicator<br>(1) (2) (3) (4)<br>Side view of single Side view of dual<br>Z<br>e<br>b<br>D2 D2<br>H D1 K L Detail Z<br>D(1) D(2) D(3) G(4) SI(1) GI(2) S2(3) G2(4)<br>K1<br>E1 E3<br>D3<br>D(8) D(7) D(6) S(5) D1(8) D1(7) D2(6) D2(5)<br>K3<br>Backside view of single pad Backside view of dual pad<br>E<br>A<br>C<br>A1<br>L<br>K2<br>E2<br>H<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**MILLIMETERS**<br>**MIN.**<br>**NOM.**<br>**MAX.**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| |||**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.70|0.75|0.85|0.028|0.030|0.033| |A1|0|-|0.05|0|-|0.002| |b|0.25|0.30|0.35|0.010|0.012|0.014| |C|0.15|0.20|0.25|0.006|0.008|0.010| |D|2.92|3.00|3.08|0.115|0.118|0.121| |D1|1.75|1.87|2.00|0.069|0.074|0.079| |D2|1.07|1.20|1.32|0.042|0.047|0.052| |D3|0.20|0.25|0.30|0.008|0.010|0.012| |E|1.82|1.90|1.98|0.072|0.075|0.078| |E1|1.38|1.50|1.63|0.054|0.059|0.064| |E2|0.92|1.05|1.17|0.036|0.041|0.046| |E3|0.45|0.50|0.55|0.018|0.020|0.022| |e|0.65 BSC|||0.026 BSC||| |H|0.15|0.20|0.25|0.006|0.008|0.010| |K|0.25|-|-|0.010|-|-| |K1|0.30|-|-|0.012|-|-| |K2|0.20|-|-|0.008|-|-| |K3|0.20|-|-|0.008|-|-| |L|0.30|0.35|0.40|0.012|0.014|0.016| |C14-0630-Rev. E, 21-Jul-14<br>DWG: 5940||||||| ## **Note** - Millimeters will govern Revision: 21-Jul-14 Document Number: 73203 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR PowerPAK[®] ChipFET[®] Dual** **==> picture [385 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> 2.700<br>(0.106)<br>0.300 0.650<br>0.350 (0.012) (0.026)<br>(0.014)<br>0.300<br>(0.012)<br>0.350<br>(0.014)<br>0.200<br>(0.008)<br>0.225 0.300 0.650<br>(0.009) (0.012) (0.026)<br>1.175 1.525<br>(0.046) (0.060)<br>1.900 (0.075)<br>1.050 (0.041)<br>**----- End of picture text -----**<br> Recommended Minimum Pads Dimensions in mm/(Inches) Note: This is Flipped Mirror Image Pin #1 Location is Top Left Corner ## Return to Index www.vishay.com 10 Document Number: 69949 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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