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SI5517DU-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6 A, 6 A, 0.032 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: Trench Series
- Qualification: -
- Transistor Case Style: PowerPAK
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.3W
- Power Dissipation P Channel: 2.3W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.032ohm
- Drain Source On State Resistance P Channel: 0.032ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.71 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 23, 2026