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SI5515CDC-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4 A, 4 A, 0.03 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: 1206
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 4A
- Continuous Drain Current Id P Channel: 4A
- Drain Source On State Resistance N Channel: 0.03ohm
- Drain Source On State Resistance P Channel: 0.03ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.376 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at March 30, 2026