Illustrative purposes only
SI4564DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 10 A, 0.0145 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- Channel Type: Complementary N and P Channel
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 10A
- Continuous Drain Current Id P Channel: 10A
- Drain Source On State Resistance N Channel: 0.0145ohm
- Drain Source On State Resistance P Channel: 0.0145ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.811 € |
| Current stock | N/A |
| Lead time | 30 days |