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SI4559ADY-T1-E3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 5.3 A, 5.3 A, 0.046 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; ; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (07-Nov-2024)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 3.4W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 5.3A
- Continuous Drain Current Id P Channel: 5.3A
- Drain Source On State Resistance N Channel: 0.046ohm
- Drain Source On State Resistance P Channel: 0.046ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si4559ADY** **==> picture [59 x 49] intentionally omitted <==** Vishay Siliconix ## **N- and P-Channel 60-V (D-S) MOSFET** ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---|---|---| ||**VDS (V)**|**RDS(on) (**Ω**)**|**ID (A)a**|**Qg (Typ.)**| |N-Channel|60|0.058 at VGS= 10 V|5.3|6 nC| |||0.072 at VGS= 4.5 V|4.7|| |P-Channel|- 60|0.120 at VGS= - 10 V|- 3.9|8 nC| |||0.150 at VGS= - 4.5 V|- 3.5|| **==> picture [117 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>Top View<br>**----- End of picture text -----**<br> **Ordering Information:** Si4559ADY-T1-E3 (Lead (Pb)-free) Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) **==> picture [36 x 87] intentionally omitted <==** ## **FEATURES** - **Halogen-free According to IEC 61249-2-21 Available** - TrenchFET[®] Power MOSFET - 100 % R and UIS Tested g ## **APPLICATIONS** - CCFL Inverter **==> picture [165 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> D1 S2<br>G2<br>G1<br>S1 D2<br>**----- End of picture text -----**<br> N-Channel MOSFET P-Channel MOSFET ## **ABSOLUTE MAXIMUM RATINGS** TA = 25 °C, unless otherwise noted |**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**N-Channel**|**P-Channel**|**Unit**| |Drain-Source Voltage||VDS|60|- 60|V| |Gate-Source Voltage||VGS|± 20||| |Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|5.3|- 3.9|A| ||TC= 70 °C||4.3|- 3.2|| ||TA= 25 °C||4.3b, c|- 3.0b, c|| ||TA= 70 °C||3.4b, c|- 2.4b, c|| |Pulsed Drain Current (10 µs Pulse Width)||IDM|20|- 25|| |Source Drain Current Diode Current|TC= 25 °C|IS|2.6|- 2.8|| ||TA= 25 °C||1.7b, c|- 1.7b, c|| |Pulsed Source-Drain Current||ISM|20|- 25|| |Single Pulse Avalanche Current|L = 0.1 mH|IAS|11|15|| |Single Pulse Avalanche Energy||EAS|6.1|11|mJ| |Maximum Power Dissipation|TC= 25 °C|PD|3.1|3.4|W| ||TC= 70 °C||2|2.2|| ||TA= 25 °C||2b, c|2b, c|| ||TA= 70 °C||1.3b, c|1.3b, c|| |Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150||°C| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---|---|---| |**Parameter**||**Symbol**|**N-Channel**||**P-Channel**||**Unit**| ||||**Typ.**|**Max.**|**Typ.**|**Max.**|| |Maximum Junction-to-Ambientb, d|t≤10 s|RthJA|55|62.5|53|62.5|°C/W| |Maximum Junction-to-Foot (Drain)|Steady State|RthJF|33|40|30|37|| Notes: a. Based on TC = 25 °C. - b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. - d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 **Si4559ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min.**|**Typ.a**|**Max.**|**Unit**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 µA|N-Ch<br>P-Ch|60|||V| |||VGS= 0 V, ID= - 250 µA||- 60|||| |VDSTemperature Coefficient|ΔVDS/TJ|ID= 250 µA|N-Ch<br>P-Ch||55||mV| |||ID= - 250 µA|||- 50||| |VGS(th)Temperature Coefficient|ΔVGS(th)/TJ|ID= 250 µA|N-Ch<br>P-Ch||- 6||| |||ID= - 250 µA|||4||| |Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|N-Ch<br>P-Ch|1||3|V| |||VDS= VGS, ID= - 250 µA||- 1||- 3|| |Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 20 V|N-Ch<br>P-Ch|||100|nA| |||||||- 100|| |Zero Gate Voltage Drain Current|IDSS|VDS= 60 V, VGS= 0 V|N-Ch<br>P-Ch|||1|µA| |||VDS= - 60 V, VGS= 0 V||||- 1|| |||VDS= 60 V, VGS= 0 V, TJ= 55 °C|N-Ch<br>P-Ch|||10|| |||VDS= - 60 V, VGS= 0 V, TJ= 55 °C||||- 10|| |On-State Drain Currentb|ID(on)|VDS≥5 V, VGS= 10 V|N-Ch<br>P-Ch|20|||A| |||VDS≤- 5 V, VGS= - 10 V||- 25|||| |Drain-Source On-State Resistanceb|RDS(on)|VGS= 10 V, ID= 4.3 A|N-Ch<br>P-Ch||0.046|0.058|Ω| |||VGS= - 10 V, ID= - 3.1 A|||0.1|0.120|| |||VGS= 4.5 V, ID= 3.9 A|N-Ch<br>P-Ch||0.059|0.072|| |||VGS= - 4.5 V, ID= - 0.2 A|||0.126|0.150|| |Forward Transconductanceb|gfs|VDS= 15 V, ID= 4.3 A|N-Ch<br>P-Ch||15||S| |||VDS= - 15 V, ID= - 3.1 A|||8.5||| |**Dynamica**|||||||| |Input Capacitance|Ciss|N-Channel<br>VDS= 15 V, VGS= 0 V, f = 1 MHz<br>P-Channel<br>VDS= - 15 V, VGS= 0 V, f = 1 MHz|N-Ch<br>P-Ch||665||pF| ||||||650||| |Output Capacitance|Coss||N-Ch<br>P-Ch||75||| ||||||95||| |Reverse Transfer Capacitance|Crss||N-Ch<br>P-Ch||40||| ||||||60||| |Total Gate Charge|Qg|VDS= 30 V, VGS= 10 V, ID= 4.3 A|N-Ch<br>P-Ch||13|20|nC| |||VDS= - 30 V, VGS= - 10 V, ID= - 3.1 A|||14.5|22|| |||N-Channel<br>VDS= 30 V, VGS= 4.5 V, ID= 4.3 A<br>P-Channel<br>VDS= - 30 V, VGS= - 4.5 V, ID= - 3.1 A|N-Ch<br>P-Ch||6|9|| ||||||8|12|| |Gate-Source Charge|Qgs||N-Ch<br>P-Ch||2.3||| ||||||2.2||| |Gate-Drain Charge|Qgd||N-Ch<br>P-Ch||2.6||| ||||||3.7||| |Gate Resistance|Rg|f = 1 MHz|N-Ch<br>P-Ch||2|3|Ω| ||||||14|20|| www.vishay.com 2 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 **Si4559ADY** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min.**|**Typ.a**|**Max.**|**Unit**| |**Dynamica**|||||||| |Turn-On Delay Time|td(on)|N-Channel<br>VDD= 30 V, RL= 8.8Ω<br>ID ≅3.4 A, VGEN= 4.5 V, Rg= 1Ω<br>P-Channel<br>VDD= - 30 V, RL= 12.5Ω<br>ID ≅- 2.4 A, VGEN= - 4.5 V, Rg= 1Ω|N-Ch<br>P-Ch||15|25|ns| ||||||30|45|| |Rise Time|tr||N-Ch<br>P-Ch||65|100|| ||||||70|105|| |Turn-Off Delay Time|td(off)||N-Ch<br>P-Ch||15|25|| ||||||40|60|| |Fall Time|tf||N-Ch<br>P-Ch||10|15|| ||||||30|45|| |Turn-On Delay Time|td(on)|N-Channel<br>VDD= 30 V, RL= 8.8Ω<br>ID ≅3.4 A, VGEN= 10 V, Rg= 1Ω<br>P-Channel<br>VDD= - 30 V, RL= 12.5Ω<br>ID ≅- 2.4 A, VGEN= - 10 V, Rg= 1Ω|N-Ch<br>P-Ch||10|15|| ||||||10|15|| |Rise Time|tr||N-Ch<br>P-Ch||15|25|| ||||||13|20|| |Turn-Off Delay Time|td(off)||N-Ch<br>P-Ch||20|30|| ||||||35|55|| |Fall Time|tf||N-Ch<br>P-Ch||10|15|| ||||||30|45|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|TC= 25 °C|N-Ch<br>P-Ch|||2.6|A| |||||||- 2.8|| |Pulse Diode Forward Currenta|ISM||N-Ch<br>P-Ch|||20|| |||||||- 25|| |Body Diode Voltage|VSD|IS= 1.7 A|N-Ch<br>P-Ch||0.8|1.2|V| |||IS= - 2 A|||- 0.8|- 1.2|| |Body Diode Reverse Recovery Time|trr|N-Channel<br>IF= 1.7 A, dI/dt = 100 A/µs, TJ= 25 °C<br>P-Channel<br>IF= - 2 A, dI/dt = - 100 A/µs, TJ= 25 °C|N-Ch<br>P-Ch||30|60|ns| ||||||30|50|| |Body Diode Reverse Recovery Charge|Qrr||N-Ch<br>P-Ch||32|50|nC| ||||||35|60|| |Reverse Recovery Fall Time|ta||N-Ch<br>P-Ch||25||ns| ||||||16||| |Reverse Recovery Rise Time|tb||N-Ch<br>P-Ch||5||| ||||||14||| Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 3 **Si4559ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [493 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 20 5<br>VGS = 10 thru 4 V<br>18<br>16 4<br>14<br>12 3<br>10<br>8 2<br>TC = 125 °C<br>6<br>4 1 25 °C<br>2 3 V<br>- 55 °C<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>0.080 1000<br>0.075<br>800<br>0.070<br>Ciss<br>0.065 600<br>VGS = 4.5 V<br>0.060<br>400<br>0.055<br>VGS = 10 V<br>0.050<br>200<br>0.045 Coss<br>0.040 0 Crss<br>0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current and Gate Voltage Capacitance<br>10 2.0<br>VDS = 30 V<br>ID = 4.3 A 1.8 VGS = 10 V<br>8 ID = 4.3 A<br>1.6<br>6<br>1.4<br>1.2<br>4<br>1.0<br>2<br>0.8<br>0 0.6<br>0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150<br>Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)<br>Gate Charge On-Resistance vs. Junction Temperature<br>- Drain Current (A) - Drain Current (A)<br>D D<br>I I<br>) Ω<br>- On-Resistance (m C - Capacitance (pF)<br>DS(on)<br>R<br> - On-Resistance<br>(Normalized)<br>- Gate-to-Source Voltage (V) DS(on)<br>R<br> GS<br>V<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 **Si4559ADY** **==> picture [60 x 50] intentionally omitted <==** ## Vishay Siliconix ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source-to-Drain Voltage (V)<br>- Source Current (A)<br>S<br>I<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [221 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.8<br>2.6 ID = 250 µA<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [71 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [224 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 0.12<br>0.11<br>0.10<br>0.09<br>0.08<br>0.07<br>I D = 4.3 A<br>0.06<br>0.05<br>0.04<br>0 2 4 6 8 10<br>V GS - Gate-to-Source V oltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>25<br>20<br>15<br>10<br>5<br>0<br>0.01 0.1 1 10 100 1000<br>Time (s)<br>) Ω<br>- Drain-to-Source On-Resistance (m<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse Power, Junction-to-Ambient<br>**----- End of picture text -----**<br> **==> picture [238 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> Limited by RDS(on) *<br>10<br>100 µs<br>1 1 ms<br>10 ms<br>0.1 100 ms<br>1 s<br>10 s<br>0.01 Single PulseTA = 25 °C DC<br>0.001<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area<br>- Drain Current (A)<br>I D<br>**----- End of picture text -----**<br> Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 5 **Si4559ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [492 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 6 4.0<br>3.5<br>5<br>3.0<br>4<br>2.5<br>3 2.0<br>1.5<br>2<br>1.0<br>1<br>0.5<br>0 0.0<br>25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating* Power Derating<br> - Drain Current (A)<br>ID Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [221 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>TA = BV - VL [. ] IDDD<br>1<br>0.000001 0.00001 0.0001 0.001<br>TA - Time In Avalanche (s)<br>Single Pulse Avalanche Capability<br> - Peak Avalanche Current (A)<br>IC<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 **Si4559ADY** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** ## **N-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [471 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 90 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 7 **Si4559ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>VGS = 10 thru 5 V<br>20<br>15<br>4 V<br>10<br>5<br>3 V<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>- Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [219 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15<br>10<br>TC = 125 °C<br>5<br>25 °C<br>- 55 °C<br>0<br>0 1 2 3 4 5 6<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>- Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [491 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> 0.40 1000<br>0.35<br>800<br>0.30<br>0.25 Ciss<br>600<br>0.20 V GS = 4.5 V<br>0.15 VGS = 10 V 400<br>0.10<br>200<br>0.05 Coss<br>0.00 0 Crss<br>0 5 10 15 20 25 0 10 20 30 40 50 60<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Capacitance<br>10 2.2<br>IVDDS = 3.1 A = 30 V 2.0 V I DGS = 3.1 A = 10 V<br>8<br>1.8<br>1.6<br>6<br>1.4<br>4 1.2<br>1.0<br>2<br>0.8<br>0 0.6<br>0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 175<br>Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)<br>Gate Charge On-Resistance vs. Junction Temperature<br>) Ω<br>- On-Resistance (<br>C - Capacitance (pF)<br>DS(on)<br>R<br> - On-Resistance<br>(Normalized)<br>- Gate-to-Source Voltage (V) DS(on)<br> GS R<br>V<br>**----- End of picture text -----**<br> www.vishay.com Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 8 **Si4559ADY** Vishay Siliconix **==> picture [60 x 50] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>- Source Current (A)<br>S<br>I<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [226 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 0.40<br>0.35<br>0.30<br>0.25 I D = 3.1 A<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>) Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Gate-to-Source Voltage** **==> picture [482 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 50<br>0.4 40<br>ID = 250 µA<br>0.2 30<br>0.0 20<br>- 0.2 10<br>- 0.4 0<br>- 50 - 25 0 25 50 75 100 125 150 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>TJ - Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power<br>Variance (V)<br>Power (W)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [248 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>IDM Limited<br>Limited<br>10 by RDS(on)* P(t) = 0.0001<br>1 P(t) = 0.001<br>ID(on) P(t) = 0.01<br>Limited<br>P(t) = 0.1<br>0.1<br>TA = 25 °C<br>Single Pulse P(t) = 1<br>P(t) = 10<br>DC<br> BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Case<br>- Drain Current (A)<br>I D<br>**----- End of picture text -----**<br> Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 9 **Si4559ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating*<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [486 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5 100<br>4.0<br>3.5<br>3.0<br>2.5<br>10<br>2.0<br>1.5<br>1.0 TA = BVL - [. ] IVDDD<br>0.5<br>0.0 1<br>0 25 50 75 100 125 150 0.000001 0.00001 0.0001 0.001<br>TC - Case Temperature (°C) TA - Time In Avalanche (s)<br>Power Derating, Junction-to-Foot Single Pulse Avalanche Capability<br>Power Dissipation (W)<br> - Peak Avalanche Current (A)<br>IC<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 **Si4559ADY** **==> picture [60 x 50] intentionally omitted <==** Vishay Siliconix ## **P-CHANNEL TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [471 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 P DM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D = t 2 t t 1 2<br>2. Per Unit Base = R th J A = 85 °C/W<br>3. T JM - T A = P DM Z th J A [(t ) ]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 1 1 0 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Ef fective T ransient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Foot** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73624._ Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 11 **==> picture [59 x 49] intentionally omitted <==** ## **Package Information** ## Vishay Siliconix **SOIC (NARROW): 8-LEAD** JEDEC Part Number: MS-012 **==> picture [128 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> 8 7 6 5<br>E H<br>1 2 3 4<br>S<br>**----- End of picture text -----**<br> **==> picture [412 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> D h x 45<br>C<br>0.25 mm (Gage Plane)<br>A<br>All Leads<br>0.101 mm<br>q<br>e B A1 L<br>0.004"<br>**----- End of picture text -----**<br> |**DIM**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**| |---|---|---|---|---| ||**Min**|**Max**|**Min**|**Max**| |A|1.35|1.75|0.053|0.069| |A1|0.10|0.20|0.004|0.008| |B|0.35|0.51|0.014|0.020| |C|0.19|0.25|0.0075|0.010| |D|4.80|5.00|0.189|0.196| |E|3.80|4.00|0.150|0.157| |e|1.27 BSC||0.050 BSC|| |H|5.80|6.20|0.228|0.244| |h|0.25|0.50|0.010|0.020| |L|0.50|0.93|0.020|0.037| |q|0°|8°|0°|8°| |S|0.44|0.64|0.018|0.026| |ECN: C-06527-Rev. I, 11-Sep-06<br>DWG: 5498||||| Document Number: 71192 11-Sep-06 www.vishay.com 1 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR SO-8** **==> picture [225 x 301] intentionally omitted <==** **----- Start of picture text -----**<br> 0.172<br>(4.369)<br>0.028<br>(0.711)<br>0.022 0.050<br>(0.559) (1.270)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.246 (6.248) 0.152 (3.861)<br>0.047 (1.194)<br>**----- End of picture text -----**<br> Return to Index Return to Index ## www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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