Illustrative purposes only
SI4554DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 8 A, 0.02 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 3.2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.02ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 8A
- Power Dissipation N Channel: 3.2W
- Power Dissipation P Channel: 3.2W
- Gate Source Threshold Voltage Max: 1V
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 8A
- Continuous Drain Current Id P Channel: 8A
- Drain Source On State Resistance N Channel: 0.02ohm
- Drain Source On State Resistance P Channel: 0.02ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.32 € |
| Current stock | N/A |
| Lead time | 30 days |