SI4542DY

## **Is Now Part of** 

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **Si4542DY** 

## **30V Complementary PowerTrench[] MOSFET** 

## **General Description** 

## **Features** 

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This complementary MOSFET device is produced using • Q1 : N-Channel<br>Fairchild’s advanced PowerTrench process that has<br>been especially tailored to minimize the on-state  6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V<br>resistance and yet maintain low gate charge forsuperior switching performance. RDS(on) = 35 mΩ @ VGS = 4.5V<br>• Q2 :   P-Channel<br>Applications<br> –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V<br>• DC/DC converter<br>RDS(on) = 45 mΩ @ VGS = –4.5V<br>• Power management<br>DD2 5 Q2 4<br>DD2<br>DD1<br>6 3<br>DD1<br>Q1<br>7 2<br>SO-8 S2G2G<br>G1 S 8 1<br>S1 S<br>Pin 1 ¢ SO-8 S cH)<br>Absolute Maximum Ratings   TA = 25°C unless otherwise noted<br>Symbol Parameter Q1 Q2 Units<br>VDSS Drain-Source Voltage 30 –30 V<br>VGSS Gate-Source Voltage ±20 ±20 V<br>ID Drain Current - Continuous  (Note 1a) 6 –6 A<br>- Pulsed 20 –20<br>PD Power Dissipation for Dual Operation 2 W<br>Power Dissipation for Single Operation (Note 1a) 1.6<br>(Note 1b) 1.2<br>(Note 1c) 1<br>TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C<br>Thermal Characteristics<br>RθJA Thermal Resistance, Junction-to-Ambient  (Note 1a) 78 °C/W<br>RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W<br> —<br>Package Marking and Ordering Information<br>Device Marking Device Reel Size Tape width Quantity<br>4542 Si4542DY 13” 12mm 2500 units<br>ee<br>**----- End of picture text -----**<br>


Si4542DY Rev A 

2001 Fairchild Semiconductor International 

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Electrical Characteristics TA = 25°C unless otherwise noted<br>Symbol Parameter Test Conditions Type Min Typ Max Units<br>Off Characteristics<br>BVDSS Drain-Source Breakdown VGS = 0 V, ID = 250 µA Q1 30 V<br>Voltage VGS = 0 V, ID = –250 µA Q2 –30<br>∆BVDSS Breakdown Voltage ID = 250 µA, Referenced to 25°C Q1 23 mV/°C<br>   ∆TJ Temperature Coefficient ID = –250 µA, Referenced to 25°C Q2 –21<br>IDSS Zero Gate Voltage Drain VDS = 24 V, VGS = 0 V Q1 1 µA<br>Current VDS = –24 V, VGS = 0 V Q2 –1<br>IGSS Gate-Body Leakage VGS = +20 V, VDS = 0 V Q1 +100 nA<br>VGS = +20 V, VDS = 0 V Q2 +100<br>On Characteristics (Note 2)<br>VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA Q1 1 1.5 3 V<br>VDS = VGS, ID = –250 µA Q2 –1 –1.7 –3<br>∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Q1 –4 mV/°C<br>   ∆TJ Temperature Coefficient ID = –250 µA, Referenced to 25°C Q2 4<br>RDS(on) Static Drain-Source VGS = 10 V, ID = 6 A Q1 19 28 mΩ<br>On-Resistance VGS = 10 V, ID = 6 A, TJ = 125°C 32 48<br>VGS = 4.5 V, ID = 5 A 25 35<br>VGS = –10 V, ID = –6 A Q2 21 32<br>VGS = –10 V, ID = –6 A, TJ = 125°C 29 51<br>VGS = –4.5 V, ID = –5 A 30 45<br>ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V Q1 20 A<br>VGS = –10 V, VDS = –5 V Q2 –20<br>gFS Forward Transconductance VDS = 15 V, ID = 6 A Q1 18 S<br>VDS = –10 V, ID = –6 A Q2 16<br>Dynamic Characteristics<br>Ciss Input Capacitance Q1 Q1 830 pF<br>VDS = 15 V, VGS = 0 V, Q2 1540<br>Coss Output Capacitance f = 1.0 MHz Q1 185 pF<br>Q2 Q2 400<br>Crss Reverse Transfer VDS = –15 V, VGS = 0 V, Q1 80 pF<br>Capacitance f = 1.0 MHz Q2 170<br>Electrical Characteristics  (continued) TA = 25°C unless otherwise noted<br>Symbol Parameter Test Conditions Type Min Typ Max Units<br>Switching Characteristics  (Note 2)<br>td(on) Turn-On Delay Time Q1 Q1 6 12 ns<br>VDS = 15 V, ID = 1 A, Q2 13 24<br>tr Turn-On Rise Time VGS = 10V, RGEN = 6 Ω Q1 10 18 ns<br>Q2 22 35<br>td(off) Turn-Off Delay Time Q2 Q1 18 29 ns<br>VDS = –15 V, ID = –1 A, Q2 47 75<br>tf Turn-Off Fall Time VGS = –10 V, RGEN = 6 Ω Q1 5 12 ns<br>Q2 18 30<br>Qg Total Gate Charge Q1 Q1 9 13 nC<br>VDS = 15 V, ID = 7.5 A, VGS = 5 V Q2 15 20<br>Qgs Gate-Source Charge Q1 2.8 nC<br>Q2 Q2 4<br>Qgd Gate-Drain Charge VDS = –10 V, ID = –6 A, VGS = –5V Q1 3.1 nC<br>Q2 5<br>**----- End of picture text -----**<br>


Si4542DY Rev A 

## **Drain-Source Diode Characteristics and Maximum Ratings** 

|IS|Maximum Continuous Drain-Source Diode Forward Current|Maximum Continuous Drain-Source Diode Forward Current|Q1<br>Q2|||1.3<br>–1.3|A|
|---|---|---|---|---|---|---|---|
|VSD|Drain-Source Diode Forward<br>Voltage|VGS= 0 V, IS= 1.3 A(Note 2)<br>VGS=0V,IS= –1.3A (Note 2)|Q1<br>Q2||0.7<br>–0.7|1.2<br>–1.2|V|
|**Notes:**<br>**1.**RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal ref<br>the drain pins.  RθJCis guaranteed by design while RθCAis determined by the user's board design.|||erence is|defined as t|he solder mounting su||rface of|



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a) 78°C/W when b) 125°C/W when c) 135°C/W when mounted on a mounted on a mounted on a .02 in[2] minimum pad. 0.5 in[2] pad of 2 oz pad of 2 oz copper copper 

Scale 1 : 1 on letter size paper 

**2.** Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 

Si4542DY Rev A 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FAST<br>|PACMAN™||SuperSOT™-3|
|---|---|---|---|---|
|Bottomless™|FASTr™|POP™||SuperSOT™-6|
|CoolFET™|GlobalOptoisolator™|PowerTrench<br>||SuperSOT™-8|
|_CROSSVOLT_™|GTO™|QFET™||SyncFET™|
|DenseTrench™|HiSeC™|QS™||TinyLogic™|
|DOME™|ISOPLANAR™|QT Optoelectronics™||UHC™|
|EcoSPARK™|LittleFET™|Quiet Series™||UltraFET<br>|
|E2CMOSTM|MicroFET™|SILENT SWITCHER||VCX™|
|EnSignaTM|MICROWIRE™|SMART START™|||
|FACT™|OPTOLOGIC™|Star* Power™|||
|FACT Quiet Series™|OPTOPLANAR™|Stealth™|||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or<br>In Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



Rev. H1 

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