SI4497DY-T1-GE3

Power MOSFET, P Channel, 30 V, 36 A, 3300 µohm, SOIC, Surface Mount

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V;
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 7.8W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 36A
Drain Source On State Resistance: 3300µohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	1000
Price	0.837 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 15, 2026