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SI4465ADY-T1-E3
Power MOSFET, P Channel, 8 V, 13.7 A, 9000 µohm, SOIC, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:13.7A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 6.5W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 8V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 13.7A
- Drain Source On State Resistance: 9000µohm
- Gate Source Threshold Voltage Max: 450mV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.94 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si4465ADY** **==> picture [59 x 49] intentionally omitted <==** ## Vishay Siliconix ## **P-Channel 1.8-V (G-S) MOSFET** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---|---| |**VDS (V)**|**RDS(on) (**Ω**)**|**ID (A)b**|**Qg (Typ.)**| |- 8|0.009 at VGS= - 4.5 V|- 13.7|55 nC| ||0.011 at VGS= - 2.5 V|- 12.4|| ||0.016 at VGS= - 1.8 V|- 10|| ## **FEATURES** - **Halogen-free According to IEC 61249-2-21 Available** - TrenchFET[®] Power MOSFET - 1.8 V Rated - 100 % R Tested g **==> picture [39 x 84] intentionally omitted <==** **==> picture [113 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>Top View<br>**----- End of picture text -----**<br> **Ordering Information:** Si4465ADY-T1-E3 (Lead (Pb)-free) Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) **==> picture [59 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> S<br>G<br>D<br>**----- End of picture text -----**<br> P-Channel MOSFET |**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|| |---|---|---|---|---| |**Parameter**||**Symbol**|**Limit**|**Unit**| |Drain-Source Voltage||VDS|- 8|V| |Gate-Source Voltage||VGS|± 8|| |Continuous Drain Current (TJ= 150 °C)a, b|TA= 25 °C|ID|- 13.7|A| ||TA= 70 °C||- 11|| ||TC= 25 °C||- 20|| ||TC= 70 °C||- 16|| |Pulsed Drain Current||IDM|- 40|| |Continuous Source Current (Diode Conduction)a, b||IS|- 2.5|| |||ISM|40|| |Maximum Power Dissipationa, b|TA= 25 °C|PD|3.0|W| ||TA= 70 °C||1.95|| ||TC= 25 °C||6.5|| ||TC= 70 °C||4.2|| |Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150|°C| |**THERMAL RESISTANCE RATINGS**|||||| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**| |Maximum Junction-to-Ambient (MOSFET)a|t≤10 s|RthJA|34|41|°C/W| ||Steady State||67|80|| |Maximum Junction-to-Foot (Drain)|Steady State|RthJF|15|19|| Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 10 s. Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 **Si4465ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**Static**||||||| |Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 µA|- 0.45||- 1.0|V| |Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 8 V|||± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= - 8 V, VGS= 0 V|||- 1|µA| |||VDS= - 8 V, VGS= 0 V, TJ= 55 °C|||- 5|| |On-State Drain Currenta|ID(on)|VDS≥ −5 V, VGS= - 4.5 V|- 20|||A| |Drain-Source On-State Resistancea|RDS(on)|VGS= - 4.5 V, ID= - 14 A||0.0075|0.009|Ω| |||VGS= - 2.5 V, ID= - 12 A||0.0092|0.011|| |||VGS= 1.8 V, ID= 10 A||0.013|0.016|| |Forward Transconductancea|gfs|VDS= - 10 V, ID= - 14 A||58||S| |Diode Forward Voltagea|VSD|IS= - 2.1 A, VGS= 0 V||- 0.57|- 1.2|V| |**Dynamicb**||||||| |Total Gate Charge|Qg|VDS= - 4 V, VGS= - 4.5 V, ID= - 14 A||55|85|nC| |Gate-Source Charge|Qgs|||6||| |Gate-Drain Charge|Qgd|||10||| |Gate Resistance|Rg|||2.5|3.8|Ω| |Turn-On Delay Time|td(on)|VDD= - 4 V, RL= 4Ω<br>ID ≅- 10 A, VGEN= - 4.5 V, Rg= 6Ω||33|50|ns| |Rise Time|tr|||170|255|| |Turn-Off Delay Time|td(off)|||168|255|| |Fall Time|tf|||112|170|| |Source-Drain Reverse Recovery Time|trr|IF= - 2.1 A, dI/dt = 100 A/µs||85|130|| |Body Diode Reverse Recovery Charge|Qrr|||81|125|nC| Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ www.vishay.com 2 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 **Si4465ADY** Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [490 x 619] intentionally omitted <==** **----- Start of picture text -----**<br> 40 2.0<br>VGS = 5 thru 2 V<br>32 1.6<br>1.5 V<br>24 1.2<br>TC = 125 °C<br>16 0.8<br>8 0.4 25 °C<br>1 V<br>- 55 °C<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.3 0.6 0.9 1.2 1.5<br>VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>0.020 8500<br>0.017 6800 Ciss<br>VGS = 1.8 V<br>0.014 5100<br>0.011 V GS = 2.5 V 3400<br>Coss<br>0.008 1700<br>V GS = 4.5 V Crss<br>0.005 0<br>0 8 16 24 32 40 0.0 1.6 3.2 4.8 6.4 8.0<br>I D – Drain Current (A) VDS – Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Capacitance<br>8.0 1.5<br>ID = 14 A V GS = 1.8 V<br>I D = 14 A<br>6.4<br>1.3<br>VDS = 4 V<br>4.8<br>1.1<br>3.2<br>VDS = 6 V<br>0.9 V GS = 4.5 V<br>1.6 I D = 14 A<br>0.0 0.7<br>0 21 42 63 84 105 - 50 - 25 0 25 50 75 100 125 150<br>Qg – Total Gate Charge (nC) T J – Junction Temperature (°C)<br>Gate Charge On-Resistance vs. Junction Temperature<br>)A )A<br>( t ( t<br>n n<br>e e<br>rr rr<br>u u<br>C C<br>niaDr niaDr<br>– –<br>D D<br>I I<br>)(i Ωt ec n a s s )( Fpecna<br>R e - tica<br>n p<br>O Ca<br>–S)(no C–<br>D<br>R<br>)( VtloVega i t c e e n a s s )de<br>Stt-cerooeu- O R n - –S()on (zilaNmor<br>a D<br>G R<br>–<br>S<br>G<br>V<br>**----- End of picture text -----**<br> Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 3 **Si4465ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [492 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 100 0.05<br>Tj = 150 °C 0.04<br>10<br>0.03<br>Tj = 25 °C 0.02<br>1<br>125 °C<br>0.01<br>25 °C<br>0<br>0.00<br>0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5<br>VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)<br>Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage<br>0.4<br>100<br>0.3<br>80<br>0.2<br>ID = 5 mA 60<br>0.1<br>ID = 250 µA<br>40<br>0.0<br>- 0.1 20<br>- 0.2<br>0<br>- 50 - 25 0 25 50 75 100 125 150<br>0.001 0.01 0.1 1 10<br>TJ – Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power, Junction-to-Ambient<br>)(Ω<br>e<br>c<br>n<br>a<br>tsis<br>e<br>Rn-<br>Source Current (A) O<br>– –<br>IS S)(no<br>D<br>R<br>)V<br>(<br>ec )<br>airVna)t(h ( W P re o w<br>S<br>G<br>V<br>**----- End of picture text -----**<br> **==> picture [248 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>I DM Limited<br>Limited by RDS(on)*<br>10 10 ms<br>100 ms<br>1<br>1 s<br>10 s<br>DC<br>0.1<br>T A = 25 °C<br>Single Pulse BVDSS Limited<br>0.01<br>0.1 1 10<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operatin Area<br>Drain Current (A)<br>-<br>ID<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 **Si4465ADY** **==> picture [59 x 49] intentionally omitted <==** ## Vishay Siliconix ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [217 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150<br>TC – Case Temperature (°C)<br>Current Derating<br>)A<br>( t<br>n<br>e<br>rr<br>u<br>C<br>niaDr<br>–<br>ID<br>**----- End of picture text -----**<br> **==> picture [492 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0 2.0<br>6.4 1.6<br>4.8 1.2<br>3.2 0.8<br>1.6 0.4<br>0.0 0.0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC – Case Temperature (°C) TA – Ambient Temperature (°C)<br>Power, Junction-to-Foot Power, Junction-to-Ambient<br>) )<br>( W ( W<br>oitn i t no<br>a a<br>pis i p s<br>si i s<br>D D<br> re re<br>w w<br>o o<br>P P<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 5 **Si4465ADY** ## Vishay Siliconix **==> picture [59 x 49] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [472 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>Notes:<br>0.1<br>0.05 P DM<br>t 1<br>0.02 1. Duty Cycle, D = t t 1 2<br>2. Per Unit Base = R thJA = 80 °C<br>3. T JM – T A = P DM Z thJA [(t) ]<br>Single Pulse<br>4. Surface Mounted<br>0.01<br>10 -4 10 [-3 ] 10 [-2 ] 10 [-1 ] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Foot<br>t n<br>i T e s n a r e c n a<br>i t ev d e p<br>f f E dc e e I la m m r e<br>i l a z h T<br>m r o<br>N<br>t n<br>T i e s n a r e c n a<br>i t ev d e p<br>f f E de c e I la m m r e<br>i l a z h T<br>r m o<br>N<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73856._ www.vishay.com 6 Document Number: 73856 S09-0393-Rev. B, 09-Mar-09 **==> picture [59 x 49] intentionally omitted <==** ## **Package Information** ## Vishay Siliconix **SOIC (NARROW): 8-LEAD** JEDEC Part Number: MS-012 **==> picture [128 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> 8 7 6 5<br>E H<br>1 2 3 4<br>S<br>**----- End of picture text -----**<br> **==> picture [412 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> D h x 45<br>C<br>0.25 mm (Gage Plane)<br>A<br>All Leads<br>0.101 mm<br>q<br>e B A1 L<br>0.004"<br>**----- End of picture text -----**<br> |**DIM**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**| |---|---|---|---|---| ||**Min**|**Max**|**Min**|**Max**| |A|1.35|1.75|0.053|0.069| |A1|0.10|0.20|0.004|0.008| |B|0.35|0.51|0.014|0.020| |C|0.19|0.25|0.0075|0.010| |D|4.80|5.00|0.189|0.196| |E|3.80|4.00|0.150|0.157| |e|1.27 BSC||0.050 BSC|| |H|5.80|6.20|0.228|0.244| |h|0.25|0.50|0.010|0.020| |L|0.50|0.93|0.020|0.037| |q|0°|8°|0°|8°| |S|0.44|0.64|0.018|0.026| |ECN: C-06527-Rev. I, 11-Sep-06<br>DWG: 5498||||| Document Number: 71192 11-Sep-06 www.vishay.com 1 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR SO-8** **==> picture [225 x 301] intentionally omitted <==** **----- Start of picture text -----**<br> 0.172<br>(4.369)<br>0.028<br>(0.711)<br>0.022 0.050<br>(0.559) (1.270)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.246 (6.248) 0.152 (3.861)<br>0.047 (1.194)<br>**----- End of picture text -----**<br> Return to Index Return to Index ## www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 Document Number: 91000 **1**
Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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