SI4425DDY-T1-GE3

Power MOSFET, P Channel, 30 V, 19.7 A, 9800 µohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: -
Qualification: -
Power Dissipation: 5.7W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 19.7A
Drain Source On State Resistance: 9800µohm
Gate Source Threshold Voltage Max: 1.2V

Delivery and price
Units per pack	5000
Price	0.302 €
Current stock	1000+
Lead time	30 days

Datasheet

Updated at April 1, 2026