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SI4204DY-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 19.8 A, 19.8 A, 3800 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:19.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V
- MSL: MSL 1 - Unlimited
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3.25W
- Power Dissipation P Channel: 3.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 19.8A
- Continuous Drain Current Id P Channel: 19.8A
- Drain Source On State Resistance N Channel: 3800µohm
- Drain Source On State Resistance P Channel: 3800µohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.32 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at March 30, 2026