Illustrative purposes only
SI4155DY-T1-GE3
Power MOSFET, P Channel, 30 V, 13.6 A, 0.0125 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: TrenchFET Series
- Power Dissipation: 4.5W
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 4.5W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0125ohm
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 13.6A
- Drain Source On State Resistance: 0.0125ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.355 € |
| Current stock | 3695 |
| Lead time | 7 days |
Datasheet
|
|---|