SI4151DY-T1-GE3

Power MOSFET, P Channel, 30 V, 20.5 A, 6250 µohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: TrenchFET Gen IV Series
Qualification: -
Power Dissipation: 5.6W
Transistor Mounting: Surface Mount
Transistor Polarity: P Channel
Power Dissipation Pd: 5.6W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.00625ohm
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 20.5A
Drain Source On State Resistance: 6250µohm
Automotive Qualification Standard: -
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	5000
Price	0.396 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 15, 2026