SI4103DY-T1-GE3

Power MOSFET, P Channel, 30 V, 16 A, 6700 µohm, SOIC, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; P
MSL: MSL 1 - Unlimited
SVHC: No SVHC (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: TrenchFET Gen III
Qualification: -
Power Dissipation: 5.2W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 16A
Drain Source On State Resistance: 6700µohm
Gate Source Threshold Voltage Max: 2V

Delivery and price
Units per pack	5000
Price	0.188 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026