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This product is RoHS compilant

SI3900DV-T1-E3

DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-

  • Manufacturer: VISHAY
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: N Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 830mW
  • Rds(on) Test Voltage: 4.5V
  • On Resistance Rds(on): 0.125ohm
  • Transistor Case Style: TSOP
  • Drain Source Voltage Vds: 20V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 2A
  • Power Dissipation N Channel: 830mW
  • Power Dissipation P Channel: 830mW
  • Gate Source Threshold Voltage Max: 600mV
  • Drain Source Voltage Vds N Channel: 20V
  • Drain Source Voltage Vds P Channel: 20V
  • Continuous Drain Current Id N Channel: 2A
  • Continuous Drain Current Id P Channel: 2A
  • Drain Source On State Resistance N Channel: 0.125ohm
  • Drain Source On State Resistance P Channel: 0.125ohm
Delivery and price
Units per pack 3000
Price 0.411 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet