Illustrative purposes only
SI3590DV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 2.5 A, 0.062 ohm, TSOP, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- Channel Type: Complementary N and P Channel
- Power Dissipation N Channel: 830mW
- Power Dissipation P Channel: 830mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.5A
- Continuous Drain Current Id P Channel: 2.5A
- Drain Source On State Resistance N Channel: 0.062ohm
- Drain Source On State Resistance P Channel: 0.062ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.491 € |
| Current stock | 14840 |
| Lead time | 7 days |