Illustrative purposes only
SI3585DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 20 V, 2 A, 0.1 ohm, TSOP, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 830mW
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.1ohm
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2A
- Power Dissipation N Channel: 830mW
- Power Dissipation P Channel: 830mW
- Gate Source Threshold Voltage Max: 600mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 2A
- Continuous Drain Current Id P Channel: 2A
- Drain Source On State Resistance N Channel: 0.1ohm
- Drain Source On State Resistance P Channel: 0.1ohm
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.252 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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