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SI3134KDWA-TP
Dual MOSFET, Dual N Channel, 20 V, 750 mA, 0.3 ohm
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- Manufacturer: MICRO COMMERCIAL COMPONENTS (MCC)
- Product type: Dual MOSFETs
- SVHC: To Be Advised
- No. of Pins: 6Pins
- Channel Type: Dual N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 370mW
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 750mA
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.3ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.076 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## ~~**Features**~~ ESD Protected Up To 2KV (HBM) - Trench LV MOSFET Technology - * Moisture Sensitivity Level 1 - Halogen Free. “Green” Device Epoxy Meets UL 94 V-0 Flammability[(Note 1)] Rating **==> picture [15 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> N<br>**----- End of picture text -----**<br> ## **Maximum Ratings** |**Parameter**<br>~~*ThermalResistance:~~<br>~~°C/WJunction~~|**Parameter**<br>~~*ThermalResistance:~~<br>~~°C/WJunction~~|**Symbol**<br>~~JunctiontoAmbient~~|**Rating**<br>~~Ambient~~|**Unit**| |---|---|---|---|---| |Drain-Source Voltage<br>~~*ThermalResistance:~~<br>~~°C/WJunction~~||VDS<br>~~JunctiontoAmbient~~|20<br>~~Ambient~~|V| |Gate-Source Volltage<br>~~* Thermal Resistance:~~<br>~~°C/WJunction~~||VGS<br>~~Junction toAmbient~~|±12<br>~~Ambient~~|V| |Continuous Drain Current|TA=25°C|ID|0.75|A| ||TA=100°C||0.47|| |Pulsed Drain Current(Note3)||IDM|3|A| |Total Power Dissipation(Note4)||PD|0.37|W| **==> picture [163 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>6 5 4<br>B C<br>1 2 3<br>:<br>A<br>M<br>H<br>K L<br>J<br>D<br>**----- End of picture text -----**<br> Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. The value of RθJA is measured with the device mounted on 1 in[2 ] FR-4 board with 2 oz copper, in a still air environment with TA =25°C. 3. Repetitive rating; pulse width limited by max. junction temperature. 4. PD is based on max. junction temperature, using junction-ambient thermal resistance. **==> picture [194 x 53] intentionally omitted <==** **----- Start of picture text -----**<br> Bc_|0.0450.0790.053115.0.096/ 135)<br>.<br>_D 2.00245)<br>_G | 002 | 065 | TYP |<br>**----- End of picture text -----**<br> ## **Internal Structure and Marking Code** **==> picture [146 x 77] intentionally omitted <==** **----- Start of picture text -----**<br> D1 G2 S2<br>6 5 4<br>6 5 4<br>34KA<br>1 2 3<br>1 2 3 I<br>S1 G1 D2<br>**----- End of picture text -----**<br> Rev.4-2-05142024 6 **�����4���A** ## **ELECTRICAL CHARACTERISTICS (Ta=25** � **unless otherwise specified)** |**Parameter**|**Symbol**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Static Characteristics**||||||| |Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|20|||V| |Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|0.35|0.7|1.1|V| |Gate-Body Leakage Current|IGSS|VGS=±10V, VDS=0V|||±10|µA| |Zero Gate Voltage Drain Current|IDSS|VDS=20V, VGS=0V|||1|µA| |Drain-Source On-Resistance|RDS(on)|VGS=4.5V, ID=500mA||185|300|mΩ| |||VGS=2.5V, ID=400mA||268|400|| |||VGS=1.8V, ID=200mA||440|700|| |Forward Transconductance|gFS|VDS=5V, ID=0.75A||1.6||S| |Gate Resistance|Rg|f=1 MHz, Open drain||37||Ω| |**Diode Characteristics**||||||| |Continuous Body Diode Current|IS||||0.75|A| |Diode Forward Voltage|VSD|VGS=0V, IS=500mA|||1.2|V| |Reverse Recovery Time|trr|IF=0.5A, dIF/dt=100A/μs||12||ns| |Reverse Recovery Charge|Qrr|||0.6||nC| |**Dynamic Characteristics**||||||| |Input Capacitance|Ciss|VDS=16V,VGS=0V,f=1MHz||28||pF| |Output Capacitance|Coss|||9.5||| |Reverse Transfer Capacitance|Crss|||4.6||| |Total Gate Charge|Qg|VDS=10V,VGS=4.5V,ID=0.5A||1.2||nC| |Gate-Source Charge|Qgs|||0.26||| |Gate-Drain Charge|Qgd|||0.23||| |Turn-On Delay Time|td(on)|VDD=10V,VGS=10V,<br>RG=3Ω,ID=0.5A||2||ns| |Turn-On Rise Time|tr|||17||| |Turn-Off Delay Time|td(off)|||14||| |Turn-Off Fall Time|tf|||26||| ����������� ��6 Rev.4-2-05142024 **�����4���A** ## **Curve Characteristics** **==> picture [261 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.1 - Typical Output Characteristics<br>3.0<br>VGS=4.5V,4V,3.5V<br>2.5 V GS =2.5V<br>2.0<br>1.5 V GS =2V<br>1.0 V GS =1.8V<br>0.5 V GS =1.5V<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig.3 - RDS(ON) - VGS<br>700<br>ID=0.5A<br>600<br>500<br>400<br>300<br>25℃<br>200<br>100<br>0<br>1 1.5 2 2.5 3 3.5 4 4.5<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br> **Fig.5 - Capacitance Characteristics** **==> picture [235 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Ciss<br>Coss<br>10<br>Crss<br>1<br>0 5 10 15 20<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [260 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.2 - Transfer Characteristic<br>3.0<br>VDS=5V<br>2.5<br>25°C<br>150°C<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 1 2 3 4<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [260 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.4 - RDS(ON) - ID<br>350<br>300 VGS=2.5V<br>250<br>VGS=4.5V<br>200<br>150<br>100<br>50<br>0<br>0 0.2 0.4 0.6 0.8 1<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br> **==> picture [260 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.6 - Gate Charge<br>4.5<br>4 VIDDS=0.5A=10V<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>Gate Charge (nC)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br> ����������� ��6 Rev.4-2-05142024 **�����4���A** ## **Curve Characteristics** **Fig.7 - Normalized Threshold Voltage** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>1.2<br>1.0<br>0.8 ID=250µA<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br> **Fig.9 - IS - VSD** **==> picture [235 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>VGS=0V<br>150℃ 25℃<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br> **Fig.8 - Normalized On Resistance Characteristics** **==> picture [235 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>1.6 VGS=4.5V<br>ID= 0.5A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>Normalized On Resistance<br>**----- End of picture text -----**<br> **==> picture [260 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.10 - Drain Current<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Drain Current(A)<br>**----- End of picture text -----**<br> **==> picture [260 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.11 - PD Dissipation<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br> ����������� 4�6 Rev.4-2-05142024 **�����4���A** ## **Curve Characteristics** ## **Fig.12 - Safe Operation Area** **==> picture [451 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>RDS(on) Limited 10uS<br>1<br>100uS<br>300uS<br>1mS<br>0.1 DC 10mS<br>TJ(MAX)=150℃<br>TA=25℃<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>Drain-Source Voltage (V)<br>Fig.13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T In descending order<br>TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>1 RθJA=332℃/W<br>0.1<br>0.01 Single Pulse PDM<br>TON<br>T<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width(s)<br>Drain Current (A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br> ����������� 5�6 Rev.4-2-05142024 $1313 **4** KDW **A** ## **Device Packing** - For packaging details, go to our website at https://www.mccsemi.com/pdf/ProductPackaging/SOT 363%20Package.pdf *****IMPORTANT NOTICE***** _**Micro Commercial Components Corp**_ . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp**_ . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp**_ . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at ~~https://www.mccsemi.com/Home/TermsAndConditions.~~ *****LIFE SUPPORT***** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. *****CUSTOMER AWARENESS***** 6 6 / Rev.4-2-05142024
Updated at April 29, 2026
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