SI2367DS-T1-GE3

Power MOSFET, P Channel, 20 V, 3.8 A, 0.066 ohm, TO-236, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: P Channel
Product Range: Trench
Qualification: -
Power Dissipation: 960mW
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 4.5V
Transistor Case Style: TO-236
Drain Source Voltage Vds: 20V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 3.8A
Drain Source On State Resistance: 0.066ohm
Gate Source Threshold Voltage Max: 400mV

Delivery and price
Units per pack	1500
Price	0.134 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026