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SI2343CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 5.9 A, 0.045 ohm, SOT-23, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 2.5W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5.9A
- Drain Source On State Resistance: 0.045ohm
- Gate Source Threshold Voltage Max: 1.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.159 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si2343CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **P-Channel 30-V (D-S) MOSFET** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---|---| |**VDS (V)**|**RDS(on) (**Ω**)**|**ID (A)a, e**|**Qg (Typ.)**| |- 30|0.045 at VGS= - 10 V|- 5.9|7 nC| ||0.075 at VGS= - 4.5 V|- 4.6|| ## **FEATURES** - **Halogen-free According to IEC 61249-2-21 Definition** - TrenchFET[®] Power MOSFET - 100 % R Tested g - Compliant to RoHS Directive 2002/95/EC ## **APPLICATIONS** **==> picture [34 x 93] intentionally omitted <==** - Load Switch **==> picture [98 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> TO-236<br>(SOT-23)<br>G 1<br>3 D<br>S 2<br>Top View<br>Si2343CDS (P1)*<br>* Marking Code<br>**----- End of picture text -----**<br> **Ordering Information:** Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) - Notebook Adaptor Switch - DC/DC Converter S G D P-Channel MOSFET |**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|**ABSOLUTE MAXIMUM RATINGS**TA= 25 °C, unless otherwise noted|| |---|---|---|---|---| |**Parameter**||**Symbol**|**Limit**|**Unit**| |Drain-Source Voltage||VDS|- 30|V| |Gate-Source Voltage||VGS|± 20|| |Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|- 5.9|A| ||TC= 70 °C||- 4.7|| ||TA= 25 °C||- 4.2b, c|| ||TA= 70 °C||- 3.3b, c|| |Pulsed Drain Current||IDM|- 25|| |Continous Source-Drain Diode Current|TC= 25 °C|IS|- 2.1|| ||TA= 25 °C||- 1b, c|| |Maximum Power Dissipation|TC= 25 °C|PD|2.5|W| ||TC= 70 °C||1.6|| ||TA= 25 °C||1.25b, c|| ||TA= 70 °C||0.8b, c|| |Operating Junction and Storage Temperature|Range|TJ, Tstg|- 55 to 150|°C| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---| |**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**| |Maximum Junction-to-Ambientb, d|t≤5 s|RthJA|75|100|°C/W| |Maximum Junction-to-Foot (Drain)|Steady State|RthJF|40|50|| Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W. - e. Package Limited. Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 www.vishay.com 1 **Si2343CDS** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted|**SPECIFICATIONS**TJ= 25 °C, unless otherwise noted||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**Static**||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= - 250 µA|- 30|||V| |VDSTemperature Coefficient|ΔVDS/TJ|ID= - 250 µA||- 19||mV/°C| |VGS(th)Temperature Coefficient|ΔVGS(th)/TJ|||4.4||| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 µA|- 1.2||- 2.5|V| |Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V|||± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= - 30 V, VGS= 0 V|||- 1|µA| |||VDS= - 30 V, VGS= 0 V, TJ= 55 °C|||- 5|| |On-State Drain Currenta|ID(on)|VDS≤- 5 V, VGS= - 10 V|- 25|||A| |Drain-Source On-State Resistancea|RDS(on)|VGS=- 10 V, ID= - 4.2 A||0.037|0.045|Ω| |||VGS=- 4.5 V, ID= - 3.2 A||0.062|0.075|| |Forward Transconductancea|gfs|VDS= - 15 V, ID= - 4.2 A||10||S| |**Dynamicb**||||||| |Input Capacitance|Ciss|VDS= - 15 V, VGS= 0 V, f = 1 MHz||590||pF| |Output Capacitance|Coss|||115||| |Reverse Transfer Capacitance|Crss|||93||| |Total Gate Charge|Qg|VDS= - 15 V, VGS= - 10 V, ID= - 4.2 A||13.6|21|nC| |||VDS= - 15 V, VGS= - 4.5 V, ID= - 4.2 A||7|11|| |Gate-Source Charge|Qgs|||2.3||| |Gate-Drain Charge|Qgd|||3.2||| |Gate Resistance|Rg|f = 1 MHz|1|5|10|Ω| |Turn-On Delay Time|td(on)|VDD= - 15 V, RL= 4.5Ω<br>ID ≅- 3.3 A, VGEN= - 4.5 V, Rg= 1Ω||30|45|ns| |Rise Time|tr|||25|38|| |Turn-Off Delay Time|td(off)|||16|24|| |Fall Time|tf|||8|16|| |Turn-On Delay Time|td(on)|VDD= - 15 V, RL= 4.5Ω<br>ID ≅- 3.3 A, VGEN= - 10 V, Rg= 1Ω||8|16|| |Rise Time|tr|||10|20|| |Turn-Off Delay Time|td(off)|||18|27|| |Fall Time|tf|||8|16|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous Source-Drain Diode Current|IS|TC= 25 °C|||- 4.2|A| |Pulse Diode Forward Current|ISM||||- 25|| |Body Diode Voltage|VSD|IS= - 3.3 A, VGS=0 V||- 0.8|- 1.2|V| |Body Diode Reverse Recovery Time|trr|IF= - 3.3 A, dI/dt = 100 A/µs, TJ= 25 °C||17|26|ns| |Body Diode Reverse Recovery Charge|Qrr|||9|18|nC| |Reverse Recovery Fall Time|ta|||10||ns| |Reverse Recovery Rise Time|tb|||7||| Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ www.vishay.com 2 Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 **Si2343CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [479 x 617] intentionally omitted <==** **----- Start of picture text -----**<br> 25 3.0<br>VGS = 5 V<br>VGS = 10 V thru 6 V<br>20 2.4<br>15 1.8<br>VGS = 4 V<br>10 1.2<br>TC = 25 °C<br>5 0.6<br>VGS = 3 V TC = 125 °C<br>TC = - 55 °C<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>0.10 1000<br>0.08 800<br>VGS = 4.5 V<br>Ciss<br>0.06 600<br>VGS = 10 V<br>0.04 400<br>0.02 200 Coss<br>Crss<br>0.00 0<br>0 5 10 15 20 25 0 5 10 15 20<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Capacitance<br>10 1.7<br>ID = 4.2 A ID = 4.2 A<br>8 VDS = 15 V 1.5<br>VGS = 10 V<br>VDS = 8 V<br>6 1.3<br>VGS = 4.5 V<br>VDS = 24 V<br>4 1.1<br>2 0.9<br>0 0.7<br>0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150<br>Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)<br>Gate Charge On-Resistance vs. Junction Temperature<br>- Drain Current (A) - Drain Current (A)<br>I D I D<br>)Ω<br>- On-Resistance (<br>C - Capacitance (pF)<br>DS(on)<br>R<br>- On-Resistance<br>(Normalized)<br>- Gate-to-Source Voltage (V) RDS(on)<br>GS<br>V<br>**----- End of picture text -----**<br> Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 www.vishay.com 3 **Si2343CDS** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [472 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 100 0.10<br>ID = 4.2 A<br>0.08<br>TJ = 150 °C<br>10<br>TJ = 125 °C<br>TJ = 25 °C 0.06<br>TJ = 25 °C<br>1<br>0.04<br>0.1 0.02<br>0.0 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10<br>VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage<br>2.2 10<br>2.0 8<br>1.8 6<br>ID = 250 µA<br>1.6 4<br>1.4 2 TA = 25 °C<br>1.2 0<br>- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000<br>TJ - Temperature (°C) Time (s)<br>Threshold Voltage Single Pulse Power (Junction-to-Ambient)<br>)Ω<br>- Source Current (A) - On-Resistance (<br>I S<br>DS(on)<br>R<br>(V)<br>GS(th)<br>V Power (W)<br>**----- End of picture text -----**<br> **==> picture [214 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by RDS(on)*<br>10<br>100 µs<br>1 1 ms<br>10 ms<br>0.1 TA = 25 °C 100 ms<br>Single Pulse<br>1 s, 10 s<br>DC<br>BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br>Drain Current (A)<br>-<br>ID<br>**----- End of picture text -----**<br> www.vishay.com 4 Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 **Si2343CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [212 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>6<br>Package Limited<br>4<br>2<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating*<br>Drain Current (A)<br>-<br>I D<br>**----- End of picture text -----**<br> **==> picture [478 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 1.0<br>2.0 0.8<br>1.5 0.6<br>1.0 0.4<br>0.5 0.2<br>0.0 0.0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power, Junction-to-Foot Power, Junction-to-Ambient<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 www.vishay.com 5 **Si2343CDS** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [470 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1<br>0.05 PDM<br>t1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = RthJA = 166 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Foot** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65474._ www.vishay.com Document Number: 65474 S09-2270-Rev. A, 02-Nov-09 6 **Legal Disclaimer Notice** Vishay **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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