Illustrative purposes only
SI2308CDS-T1-GE3
Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: TrenchFET Gen IV
- Power Dissipation: 1.6W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.6W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.12ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.6A
- Drain Source On State Resistance: 0.12ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.163 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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