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SI2308CDS-T1-GE3
Power MOSFET, N Channel, 60 V, 2.6 A, 0.12 ohm, SOT-23, Surface Mount
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: TrenchFET Gen IV
- Qualification: -
- Power Dissipation: 1.6W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.6A
- Drain Source On State Resistance: 0.12ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.094 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Si2308CDS** Vishay Siliconix www.vishay.com ## **N-Channel 60 V (D-S) MOSFET** **==> picture [90 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> SOT-23 (TO-236)<br>D<br>3<br>Cd<br>2<br>S<br>1<br>G<br>Top View<br>**----- End of picture text -----**<br> ## **Marking code:** G3 ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---| |VDS (V)|60| |RDS(on)max.(Ω)at VGS= 10 V|0.144| |RDS(on)max.(Ω)at VGS= 4.5 V|0.200| |Qgtyp.(nC)|1.05| |ID (A) d|2.6| |Configuration|Single| ## **FEATURES** - TrenchFET[®] Gen IV power MOSFET - 100 % Rg tested - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** **==> picture [75 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br> - Battery switch - DC/DC converter - Load switch ## **ORDERING INFORMATION** Package SOT-23 Lead (Pb)-free and halogen-free Si2308CDS-T1-GE3 |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)<br>~~Cn~~| |---|---|---|---|---| |**PARAMETER**<br>~~Cn~~<br>~~|~~<br>~~Pe~~<br>~~ee~~||**SYMBOL**<br>~~|~~<br>~~ee~~|**LIMIT**<br>~~PO~~<br>~~ee~~|**UNIT**<br>~~Ae~~| |Drain-source voltage<br>~~|~~<br>~~Pe~~<br>~~ee~~||VDS<br>~~|~~<br>~~ee~~|60<br>~~PO~~<br>~~ee~~|V<br>~~Ae~~| |Gate-source voltage<br>~~|~~<br>~~Pe~~<br>~~ee~~<br>~~ee~~||VGS<br>~~|~~<br>~~ee~~<br>~~_~~|± 20<br>~~PO~~<br>~~ee~~|| |Continuous drain current (TJ= 150 °C)<br>~~ee~~<br>~~ee~~<br>~~fF~~<br>~~Po~~<br>~~fp~~|TC= 25 °C<br>~~ee~~<br>~~fF~~|ID<br>~~ee~~<br>~~_~~|2.6<br>~~ee ~~<br>~~Po~~|A<br> ~~Ae~~| ||TC= 70 °C<br>~~fF~~<br>~~Po~~||2.1<br>~~Po~~<br>~~pe~~|| ||TA= 25 °C<br>~~fF~~<br>~~Po~~<br>~~fp~~||1.9a, b<br>~~Po~~<br>~~pe~~<br>~~Po~~|| ||TA= 70 °C<br>~~Po~~<br>~~fp~~||1.5a, b<br>~~pe~~<br>~~Po~~|| |Pulsed drain current(t = 100μs)<br>~~ee~~<br>~~fp~~<br>~~GO~~<br>~~EE~~||IDM<br>~~_~~<br>~~GO~~|6<br>~~Po~~<br>~~GO~~|| |Continuous source-drain diode current<br>~~EE~~<br>~~Po~~<br>~~eePo~~|TC= 25 °C<br>~~EE~~|IS<br>~~ee~~<br>|1.3|| ||TA= 25 °C<br>~~EE~~<br>~~Po~~||0.72a, b<br>~~po~~|| |Singlepulse avalanche current<br>~~EE~~<br>~~Po~~<br>~~eePo~~|L = 0.1 mH<br>~~EE~~<br>~~Po~~|IAS<br>~~ee~~<br>|4<br>~~po~~|| |Singlepulse avalanche energy<br>~~Po~~<br>~~eePo~~||EAS<br>~~ee~~<br>|0.8<br>~~po~~|mJ| |Maximum power dissipation<br>~~eePo~~<br>~~Po~~<br>fF<br>~~a~~|TC= 25 °C<br>~~Po~~|PD<br>|1.6<br>~~po~~|W| ||TC= 70 °C<br>~~Po ~~<br>~~Po~~||1<br> ~~po~~|| ||TA= 25 °C<br>~~Po~~<br>fF||0.9a, b<br>~~Po~~|| ||TA= 70 °C<br>~~Po~~<br>fF||0.6a, b<br>~~Po~~|| |Operating junction and storage temperature range<br>fF<br>~~a~~||TJ, Tstg|-55 to +150<br>~~Po~~|°C| ## **THERMAL RESISTANCE RATINGS** |**PARAMETER**||**SYMBOL**|**TYPICAL**|**MAXIMUM**|**UNIT**| |---|---|---|---|---|---| |Maximumjunction-to-ambienta, c<br>Maximumjunction-to-foot(drain)|t≤10 s<br>Steadystate|RthJA<br>RthJF|120<br>62|145<br>78|°C/W| ## **Notes** a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 175 °C/W d. TC = 25 °C S17-0939-Rev. A, 19-Jun-17 **1** Document Number: 77744 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si2308CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|60|-|-|V| |VDStemperature coefficient|ΔVDS/TJ|ID= 250 μA|-|40|-|mV/°C| |VGS(th) temperature coefficient|ΔVGS(th)/TJ||-|-4.5|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|1|-|3|V| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VDS= 60 V, VGS= 0 V|-|-|1|μA| |||VDS= 60 V, VGS= 0 V, TJ= 70 °C|-|-|10|| |On-state drain currenta|ID(on)|VDS ≤10 V, VGS= 10 V|6|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= 10 V, ID= 1.9 A|-|0.120|0.144|Ω| |||VGS= 4.5 V, ID= 1.5 A|-|0.160|0.200|| |Forward transconductancea|gfs|VDS= 30 V, ID= 1.9 A|-|3.2|-|S| |**Dynamicb**||||||| |Input capacitance|Ciss|VDS= 30 V, VGS= 0 V, f = 1 MHz|-|105|-|pF| |Output capacitance|Coss||-|55|-|| |Reverse transfer capacitance|Crss||-|7|-|| |Total gate charge|Qg|VDS= 30 V, VGS= 10 V, ID= 1.9 A|-|2|4|nC| |||VDS= 30 V, VGS= 4.5 V, ID= 1.9 A|-|1.05|2.1|| |Gate-source charge|Qgs||-|0.62|-|| |Gate-drain charge|Qgd||-|0.17|-|| |Gate resistance|Rg|f = 1 MHz|0.3|1.5|3|Ω| |Turn-on delay time|td(on)|VDD= 30 V, RL= 20Ω, ID ≅1.5 A,<br>VGEN= 10 V, Rg= 1Ω|-|8|16|ns| |Rise time|tr||-|5|10|| |Turn-off delay time|td(off)||-|11|20|| |Fall time|tf||-|3|6|| |Turn-on delay time|td(on)|VDD= 30 V, RL= 20Ω, ID ≅1.5 A,<br>VGEN= 4.5 V, Rg= 1Ω|-|23|35|| |Rise time|tr||-|25|40|| |Turn-off delay time|td(off)||-|10|20|| |Fall time|tf||-|16|30|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous source-drain diode current|IS|TC= 25 °C|-|-|1.7|A| |Pulse diode forward current|ISM||-|-|4|| |Body diode voltage|VSD|IS= 1.5 A, VGS= 0 V|-|0.85|1.2|V| |Body diode reverse recovery time|trr|IF= 1.5 A, di/dt = 100 A/μs, TJ= 25 °C|-|15|30|ns| |Body diode reverse recovery charge|Qrr||-|53|80|nC| |Reverse recovery fall time|ta||-|27|-|ns| |Reverse recovery rise time|tb||-|17|-|| ## **Notes** a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si2308CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [194 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>VGS = 10 V thru 7 V<br>5<br>4 VGS = 4 V<br>3<br>2<br>1 V GS = 3 V<br>0<br>0 1 2 3 4<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Output Characteristics** **==> picture [195 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4 TC = 125 °C<br>3<br>2 TC = 25 °C<br>1<br>TC = -55 °C<br>0<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Transfer Characteristics** **==> picture [238 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.30 10000<br>0.25<br>0.20 1000<br>VGS = 4.5 V<br>0.15<br>VGS = 10 V<br>0.01 100<br>0.05<br>0 10<br>0 1 2 3 4 5 6<br>ID - Drain Current (A)<br>2nd line<br>On-Resistance vs. Drain Current and Gate Voltage<br>Axis Title<br>10 10000<br>ID = 1.9 A VDS = 30 V<br>8<br>VDS = 15 V<br>1000<br>6<br>4 VDS = 48 V<br>100<br>2<br>0 10<br>0 0.6 1.2 1.8 2.4<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [238 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>150 10000<br>120<br>Ciss<br>1000<br>90<br>60<br>Coss 100<br>30<br>Crss<br>0 10<br>0 15 30 45 60<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>Capacitance<br>Axis Title<br>1.6 10000<br>VGS = 10 V, ID = 1.9 A<br>1.4<br>1000<br>1.2<br>VGS = 4.5 V, ID = 1.5 A<br>1.0<br>100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **On-Resistance vs. Junction Temperature** Document Number: 77744 S17-0939-Rev. A, 19-Jun-17 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si2308CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>10<br>1000<br>TJ = 150 °C<br>1<br>T J = 25 °C<br>100<br>0.1<br>0.01 10<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.4 10000<br>0.3<br>1000<br>TJ = 150 °C<br>0.2<br>TJ = 25 °C 100<br>0.1<br>0 10<br>2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **On-Resistance vs. Gate-to-Source Voltage** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>2.5 10000<br>ID = 250 μA<br>2.3<br>1000<br>2.1<br>1.9<br>100<br>1.7<br>1.5 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>2nd line<br> (V)<br>2nd line VGS(th) 1st line 2nd line<br>**----- End of picture text -----**<br> **Threshold Voltage** **==> picture [180 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>2 TA =25 °C<br>0<br>0.01 0.1 1 10 100 1000<br>Time (s)<br>Power(W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>10 I DM limited 10000<br>Limited by R DS(on) (1)<br>100 μs<br>1<br>1000<br>1 m s<br>0.1 10 ms<br>100 ms<br>10s , 1s100<br>0.01 DC<br>T A = 25 °C<br>single pulse BVDSS limited<br>0.001 10<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>(1) VGS > minimum VGS at which RDS(on) is specified<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si2308CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>3.0 10000<br>2.5<br>2.0 1000<br>1.5<br>1.0 100<br>0.5<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Current Derating[a]** **==> picture [504 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title Axis Title<br>2.0 10000 0.90 10000<br>0.72<br>1.5<br>1000 1000<br>0.54<br>1.0<br>0.36<br>100 100<br>0.5<br>0.18<br>0 10 0 10<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>2nd line 2nd line<br>Power, Junction-to-Case Power, Junction-to-Ambient<br>2nd line 1st line 2nd line 2nd line 1st line 2nd line<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si2308CDS** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [410 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.02<br>Single pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1 0.05 PDM<br>0.02 t1<br>1. Duty cycle, D =t2 t t 12<br>2. Per unit base = R thJF = 50 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single pulse 4. Surface mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>0.05<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> ## **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77744._ S17-0939-Rev. A, 19-Jun-17 Document Number: 77744 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 49] intentionally omitted <==** ## **Package Information** ## Vishay Siliconix ## **SOT-23 (TO-236): 3-LEAD** **==> picture [439 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> b<br>3<br>E1 E<br>1 2<br>S e<br>e1<br>D<br>0.10 mm<br>C<br>0.004" C 0.25 mm<br>A A2 q<br>Gauge Plane<br>Seating Plane Seating Plane<br>A1 C L<br>L1<br>**----- End of picture text -----**<br> |**Dim**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**| |---|---|---|---|---| ||**Min**|**Max**|**Min**|**Max**| |**A**|0.89|1.12|0.035|0.044| |**A1**|0.01|0.10|0.0004|0.004| |**A2**|0.88|1.02|0.0346|0.040| |**b**|0.35|0.50|0.014|0.020| |**c**|0.085|0.18|0.003|0.007| |**D**|2.80|3.04|0.110|0.120| |**E**|2.10|2.64|0.083|0.104| |**E1**|1.20|1.40|0.047|0.055| |**e**|0.95 BSC||0.0374 Ref|| |**e1**|1.90 BSC||0.0748 Ref|| |**L**|0.40|0.60|0.016|0.024| |**L1**|0.64 Ref||0.025 Ref|| |**S**|0.50 Ref||0.020 Ref|| |**q**|3°|8°|3°|8°| |ECN: S-03946-Rev. K, 09-Jul-01<br>DWG: 5479||||| Document Number: 71196 09-Jul-01 www.vishay.com 1 **PAD Pattern** www.vishay.com Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **Recommended Minimum PADs for PowerPAK[®] 8 x 8L Single** **==> picture [358 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> 8.00<br>(0.31) 0.50<br>4.05 (0.02)<br>(0.16)<br>3.55 6.90<br>(0.14) (0.27)<br>Y<br>0.44 (0, 0)<br>(0.02)<br>X<br>0.54<br>(0.02)<br>6.11 0.85<br>1.29 (0.24) (0.03)<br>(0.05) 8.25<br>(0.32)<br>3.23<br>(0.13) 0.82<br>4.05 (0.03)<br>(0.16)<br>2.03 1.15<br>(0.08) (0.05)<br>0.88<br>(0.03)<br>Dimensions in millimeters (inches)<br>4.59 (0.18)<br>3.99 (0.16)<br>1.94 (0.08)<br>3.62 (0.14) 2.47 (0.10)<br>**----- End of picture text -----**<br> ## **Note** - Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 Document Number: 67477 **1** THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at March 19, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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