Illustrative purposes only
SI2308BDS-T1-GE3
N CHANNEL MOSFET, 60V, 2.3A, TO-236, FULL REEL
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 1.09W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.09W
- Rds(on) Test Voltage: 20V
- On Resistance Rds(on): 0.13ohm
- Transistor Case Style: TO-236
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.3A
- Drain Source On State Resistance: 0.13ohm
- Gate Source Threshold Voltage Max: 3V
Delivery and price | |
---|---|
Units per pack | 3000 |
Price | 0.205 € |
Current stock | N/A |
Lead time | 30 days |