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SI2304DS,215
Power MOSFET, N Channel, 30 V, 500 mA, 0.117 ohm, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 830mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 830mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.117ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 500mA
- Drain Source On State Resistance: 0.117ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.097 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SI2304DS** **==> picture [64 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> M3D088<br>**----- End of picture text -----**<br> **Rev. 01 — 17 August 2001 Product data** ## **1. Description** TrenchMOS™[1] technology Product availability: SI2304DS in SOT23. ## **2. Features** I TrenchMOS™ technology I Very fast switching I Subminiature surface mount package. ## **3. Applications** I Battery management I High speed switch I Low power DC to DC converter. ## **4. Pinning information** ## **Table 1:** **==> picture [497 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Description Simplified outline Symbol<br>1 gate (g)<br>3<br>2 source (s) d<br>3 drain (d)<br>g<br>1 2<br>MBB076 s<br>Top view MSB003<br>SOT23<br>**----- End of picture text -----**<br> 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. **==> picture [229 x 70] intentionally omitted <==** **SI2304DS** **Philips Semiconductors** ## **5. Quick reference data** ## **Table 2: Quick reference data** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage (DC)|Tj= 25 to 150°C<br>−<br>−<br>30<br>V| |ID<br>drain current (DC)|Tsp= 25°C; VGS= 5 V<br>−<br>−<br>1.7<br>A| |Ptot<br>total power dissipation|Tsp= 25°C<br>−<br>−<br>0.83<br>W| |Tj<br>junction temperature|−<br>−<br>150<br>°C| |RDSon<br>drain-source on-state resistance|VGS= 10 V; ID= 500 mA<br>−<br>−<br>117<br>mΩ| ||VGS= 4.5 V; ID= 500 mA<br>−<br>−<br>190<br>mΩ| ## **6. Limiting values** |**6.**<br>**Limiting values**|**6.**<br>**Limiting values**| |---|---| |**Table 3:**<br>**Limiting values**<br>In accordance with the Absolute Maximum Rating System (IEC 60134).|| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |VDS<br>drain-source voltage (DC)|Tj= 25 to 150°C<br>−<br>30<br>V| |VDGR<br>drain-gate voltage (DC)|Tj= 25 to 150°C; RGS= 20 kΩ<br>−<br>30<br>V| |VGS<br>gate-source voltage (DC)|−<br>±20<br>V| |ID<br>drain current (DC)|Tsp= 25°C; VGS= 5 V;Figure 2and3<br>−<br>1.7<br>A| ||Tsp= 100°C; VGS= 5 V;Figure 2and3<br>−<br>1.1<br>A| |IDM<br>peak drain current|Tsp= 25°C; pulsed; tp≤10µs<br>−<br>7.5<br>A| |Ptot<br>total power dissipation|Tsp= 25°C;Figure 1<br>−<br>0.83<br>W| |Tstg<br>storage temperature|−65<br>+150<br>°C| |Tj<br>operating junction temperature|−65<br>+150<br>°C| |**Source-drain diode**|| |IS<br>source (diode forward) current (DC)|Tsp= 25°C<br>−<br>0.83<br>A| |ISM<br>peak source (diode forward) current|Tsp= 25°C; pulsed; tp≤10µs<br>−<br>3.3<br>A| © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **2 of 12** **SI2304DS** **Philips Semiconductors** **==> picture [497 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa25<br>03aa17 120<br>120 Ider<br>Pder<br>(%)<br>(%) 100<br>100<br>80<br>80<br>60 60<br>40 40<br>20 20<br>0 0<br>0 50 100 150 Tsp (oC) 200 0 50 100 150 Tsp (oC) 200<br>Pder = ----------------------- PtotP ( tot25 ° C ) × 100 % V I der GS ≥ = 10 V------------------- I D ( I25D ° C ) × 100 %<br>Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a<br>function of solder point temperature. function of solder point temperature.<br>**----- End of picture text -----**<br> **==> picture [263 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa120<br>10 [2]<br>ID<br>(A)<br>10 R DSon = V DS / I D<br>tp = 10 µs<br>1<br>1 ms<br>P δ = tTp D.C. 10 ms<br>10 [-1]<br>100 ms<br>tp t<br>T<br>10 [-2]<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> Tsp = 25°C; IDM is single pulse **Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.** © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **3 of 12** **SI2304DS** **Philips Semiconductors** ## **7. Thermal characteristics** ## **Table 4: Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**|**Value**|**Unit**| |---|---|---|---|---| |Rth(j-sp)|thermal resistance from junction to solder point|mounted on a metal clad substrate;Figure 4|100|K/W| ## **7.1 Transient thermal impedance** **==> picture [267 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa121<br>10 [3]<br>Zth(j-sp)<br>(K/W)<br>10 [2]<br>δ =<br>0.02<br>0.05<br>0.1 P δ = tp<br>10 0.2 T<br>0.5 Single pulse<br>tp t<br>T<br>1<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br> **Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.** © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **4 of 12** **SI2304DS** **Philips Semiconductors** ## **8. Characteristics** |**8.**<br>**Characteristics**|| |---|---| |**Table 5:**<br>**Characteristics**<br>Tj= 25°C unless otherwise specified|| |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics**|| |V(BR)DSS drain-source breakdown voltage|ID= 10µA; VGS= 0 V<br>Tj= 25°C<br>30<br>40<br>−<br>V| ||Tj=−55°C<br>27<br>−<br>−<br>V| |VGS(th)<br>gate-source threshold voltage|ID= 1 mA; VDS= VGS;Figure 9<br>Tj= 25°C<br>1.5<br>2<br>−<br>V| ||Tj= 150°C<br>0.5<br>−<br>−<br>V| ||Tj=−55°C<br>−<br>−<br>2.7<br>V| |IDSS<br>drain-source leakage current|VDS= 30 V; VGS= 0 V<br>Tj= 25°C<br>−<br>0.01<br>0.5<br>µA| ||Tj= 150°C<br>−<br>−<br>10<br>µA| |IGSS<br>gate-source leakage current|VGS=±10 V; VDS= 0 V<br>−<br>10<br>100<br>nA| |RDSon<br>drain-source on-state resistance|VGS= 10 V; ID= 500 mA;Figure 7and8<br>Tj= 25°C<br>−<br>−<br>117<br>mΩ| ||VGS= 4.5 V; ID= 500 mA<br>Tj= 25°C<br>−<br>−<br>190<br>mΩ| ||Tj= 150°C<br>−<br>−<br>300<br>mΩ| |**Dynamic characteristics**|| |gfs<br>forward transconductance|VDS= 10 V; ID= 1 A<br>1.4<br>2.5<br>−<br>S| |Qg(tot)<br>total gate charge|VDD= 15 V; VGS= 10 V; ID= 0.5 A;Figure 13<br>−<br>4.6<br>nC<br>−<br>0.6<br>−<br>nC<br>−<br>1.35<br>1.83<br>nC| |Qgs<br>gate-source charge|| |Qgd<br>gate-drain (Miller) charge|| |Ciss<br>input capacitance|VGS= 0 V; VDS= 10 V; f = 1 MHz;Figure 11<br>−<br>147<br>195<br>pF<br>−<br>65<br>78<br>pF<br>−<br>41<br>56<br>pF| |Coss<br>output capacitance|| |Crss<br>reverse transfer capacitance|| |td(on)<br>turn-on delay time|VDD= 15 V; RL= 15Ω; VGS= 10 V<br>−<br>4<br>6<br>ns<br>−<br>7.5<br>12<br>ns<br>−<br>18<br>35<br>ns<br>−<br>13<br>19<br>ns| |tr<br>rise time|| |td(off)<br>turn-off delay time|| |tf<br>fall time|| |**Source-drain diode**|| |VSD<br>source-drain (diode forward) voltage|IS= 0.83 A; VGS= 0 V;Figure 12<br>−<br>0.7<br>1.2<br>V| |trr<br>reverse recovery time|IS= 1 A; dIS/dt =−100 A/µs; VGS= 0 V;<br>VDS= 25 V<br>−<br>69<br>−<br>ns| © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **5 of 12** **SI2304DS** **Philips Semiconductors** ## **==> picture [154 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa122<br>4<br>ID 10.0 8.0 5.0<br>(A) 4.0<br>3 3.5<br>2<br>3.0<br>1<br>VGS (V) = 2.5<br>0<br>0 0.5 1.0 1.5<br>VDS (V)<br>**----- End of picture text -----**<br> ## Tj = 25 °C **Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.** **==> picture [165 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa124<br>0.5<br>RDSon<br>(Ω)<br>0.4<br>0.3<br>VGS (V) = 3.5<br>0.2 5.0<br>8.0<br>10.0<br>0.1<br>0<br>0 1 2 ID (A) 3<br>**----- End of picture text -----**<br> **==> picture [36 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Tj = 25 °C<br>**----- End of picture text -----**<br> **Fig 7. Drain-source on-state resistance as a function of drain current; typical values.** **==> picture [157 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 5 003aaa123<br>ID VDS > ID x RDSon<br>(A)<br>4<br>= 150 [o] C<br>3 Tj = 25 [o] C<br>2<br>1<br>0<br>0 1 2 3 4 5<br>VGS (V)<br>**----- End of picture text -----**<br> ## Tj = 25 °C and 175 °C; VDS > ID × RDSon **Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.** **==> picture [161 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 003aaa125<br>a<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-60 -20 20 60 100 140 180<br>Tj ( [o] C)<br>**----- End of picture text -----**<br> **==> picture [60 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> R<br>a = ---------------------------- DSon -<br>RDSon ( 25 ° C )<br>**----- End of picture text -----**<br> **Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature.** © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **6 of 12** **SI2304DS** **Philips Semiconductors** **==> picture [419 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 5 03aa32 10 [-1] 03aa35<br>VGS(th) ID<br>(A)<br>(V)<br>4 max 10 [-2]<br>3 typ 10 [-3] min typ max<br>2 min 10 [-4]<br>1 10 [-5]<br>0 10 [-6]<br>0 1 2 3 4 5<br>-60 0 60 120 Tj (oC) 180 VGS (V)<br>**----- End of picture text -----**<br> **==> picture [76 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ID = 1 mA; VDS = VGS<br>**----- End of picture text -----**<br> Tj = 25 °C; VDS = 5 V **Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.** **==> picture [161 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa126<br>10 [3]<br>C<br>(pF)<br>Ciss,<br>10 [2]<br>Coss,<br>Crss<br>10<br>10 [-1] 1 10 10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> **==> picture [74 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 0 V; f = 1 MHz<br>**----- End of picture text -----**<br> **Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.** © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **7 of 12** **SI2304DS** **Philips Semiconductors** **==> picture [497 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 003aaa127 10 003aaa128<br>VGS<br>IS<br>(V)<br>(A) 8<br>6<br>1.0 Tj = 150 [o] C<br>4<br>2<br>Tj = 25 [o] C<br>0 0<br>0.2 0.4 0.6 0.8 0 2 4 6 8<br>VSD (V)<br>QG (nC)<br>Tj = 25 [o] C and 150 [o] C; VGS = 0 V ID = 0.5 A; VDD = 15 V<br>Fig 12. Source (diode forward) current as a function of Fig 13. Gate-source voltage as a function of gate<br>source-drain (diode forward) voltage; typical charge; typical values.<br>values.<br>**----- End of picture text -----**<br> © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **8 of 12** **SI2304DS** **Philips Semiconductors** ## **9. Package outline** ## **Plastic surface mounted package; 3 leads** **SOT23** **==> picture [482 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>97-02-28<br> SOT23 TO-236AB<br>99-09-13<br>**----- End of picture text -----**<br> ## **Fig 14. SOT23.** © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **9 of 12** **SI2304DS** **Philips Semiconductors** ## **10. Revision history** |**Table**|**6:**|**Revision history**|**Revision history**|| |---|---|---|---|---| |**Rev**|**Date**||**CPCN**|**Description**| |**01**|**20010817**||**-**|**Product data; initial version**| © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08526 **Product data** **Rev. 01 — 17 August 2001** **10 of 12** **SI2304DS** **Philips Semiconductors** ## **11. Data sheet status** |**Data sheet status**[1]|**Product status**[2]|**Defnition**| |---|---|---| |Objective data|Development|This data sheet contains data from the objective specifcation for product development. Philips Semiconductors<br>reserves the right to change the specifcation in any manner without notice.| |Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation. Supplementary data will be published at a<br>later date. Philips Semiconductors reserves the right to change the specifcation without notice, in order to| |||improve the design and supply the best possible product.| |Product data|Production|This data sheet contains data from the product specifcation. Philips Semiconductors reserves the right to| |||make changes at any time in order to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change Notifcation (CPCN) procedure| |||SNW-SQ-650A.| [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. ## **12.** ## **13. Disclaimers** extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. **Application information —** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Life support —** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. **Right to make changes —** Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. ## **Contact information** For additional information, please visit **http://www.semiconductors.philips.com** . For sales office addresses, send e-mail to: **sales.addresses@www.semiconductors.philips.com** . **Fax: +31 40 27 24825** **© Koninklijke Philips Electronics N.V. 2001. All rights reserved.** **9397 750 08526** **Product data** **Rev. 01 — 17 August 2001** **11 of 12** **SI2304DS** **Philips Semiconductors** ## **Contents** |**1**|**Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |**2**|**Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |**3**|**Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |**4**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**| |**5**|**Quick reference data . . . . . . . . . . . . . . . . . . . . . 2**| |**6**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**7**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |7.1|Transient thermal impedance . . . . . . . . . . . . . . 4| |**8**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**10**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**11**|**Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11**| |**12**|**Defnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**13**|**Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| ## **© Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands** All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. **==> picture [229 x 117] intentionally omitted <==** **Date of release: 17 August 2001** **Document order number: 9397 750 08526**
Updated at February 9, 2023
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