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SI2302CDS-T1-GE3
Power MOSFET, N Channel, 20 V, 2.9 A, 0.057 ohm, TO-236, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipatio
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 710mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 8V
- Transistor Case Style: TO-236
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.9A
- Drain Source On State Resistance: 0.057ohm
- Gate Source Threshold Voltage Max: 850mV
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.164 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 27, 2026