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SI1922EDH-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.165 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:4
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.25W
- Power Dissipation P Channel: 1.25W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.3A
- Continuous Drain Current Id P Channel: 1.3A
- Drain Source On State Resistance N Channel: 0.165ohm
- Drain Source On State Resistance P Channel: 0.165ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.098 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 23, 2026