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SI1902CDL-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 1.1 A, 1.1 A, 0.195 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.195ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Volta
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 420mW
- Power Dissipation P Channel: 420mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 1.1A
- Continuous Drain Current Id P Channel: 1.1A
- Drain Source On State Resistance N Channel: 0.195ohm
- Drain Source On State Resistance P Channel: 0.195ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.126 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si1902CDL** www.vishay.com Vishay Siliconix ## **Dual N-Channel 20 V (D-S) MOSFET** ## **FEATURES** **==> picture [237 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> SC-70 (6 leads)<br>SOT-363 Dual<br>S2<br>4<br>G2<br>5<br>D1<br>6<br>3<br>21 D2<br>1 G121<br>S11<br>Top View<br>Marking code: PE<br>PRODUCT SUMMARY<br>VDS (V)DS (V) (V) 20<br>RDS(on) max. (DS(on) max. ((on) max. (on) max. () max. ( max. ( ) at VGS = 4.5 V GS = 4.5 V = 4.5 V 0.235<br>RDS(on) max. (DS(on) max. ((on) max. (on) max. () max. ( max. ( ) at VGS = 2.5 V GS = 2.5 V = 2.5 V 0.306<br>Qg typ. (nC)g typ. (nC) typ. (nC) 0.9<br>ID (A) D (A) (A) [[a]] 1.1<br>= Configurationgurationuration Dual<br>**----- End of picture text -----**<br> - TrenchFET[®] power MOSFET - 100 % Rg tested - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** 1 G121 • Load DC/DC converter for switch and D1 D2 S11 portable devices Top View **Marking code:** PE • High speed switching G1 G2 **PRODUCT SUMMARY** VDS (V)DS (V) (V) 20 RDS(on) max. (DS(on) max. ((on) max. (on) max. () max. ( max. ( ) at VGS = 4.5 V GS = 4.5 V = 4.5 V 0.235 S1 S2 RDS(on) max. (DS(on) max. ((on) max. (on) max. () max. ( max. ( ) at VGS = 2.5 V GS = 2.5 V = 2.5 V 0.306 N-Channel N-Channel Qg typ. (nC)g typ. (nC) typ. (nC) 0.9 MOSFET MOSFET ID (A) D (A) (A)[[a]] 1.1 ~~=~~ Configurationgurationuration Dual ~~_~~ **ORDERING INFORMATION** Package SC-70 Lead (Pb)-free and halogen-free Si1902CDL-T1-GE3 ~~SSS~~ **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 20 ~~Pe | Po~~ V ~~py~~ Gate-source voltage VGS ± 12 TC = 25 °C 1.1 TC = 70 °C 0.9 Continuous drain current (TJ = 150 °C) ~~|~~ ID ~~PO~~ TA = 25 °C 1[b, c] ~~| PO~~ TA = 70 °C 0.8[b, c] A ~~Se| _Pe~~ Pulsed drain current (t = 300 μs) IDM 2 TC = 25 °C 0.35 Continuous source-drain diode current IS ~~=ee~~ TA = 25 °C ~~es eee~~ 0.25[b, c] TC = 25 °C 0.42 TC = 70 °C 0.27 Maximum power dissipation ~~|~~ PD ~~Po~~ W TA = 25 °C 0.30[b, c] ~~| Po~~ TA = 70 °C 0.23[b, c] ~~| PO Ce~~ Operating junction and storage temperature range TJ, Tstg -55 to +150 °C **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT** Maximum junction-to-ambient[b, d] t 5 s RthJA 290 350 °C/W Maximum junction-to-foot (drain) Steady state RthJF 250 300 ## **Notes** a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 410 °C/W S25-0533-Rev. D, 19-May-2025 Document Number: 67876 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1902CDL** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|20|-|-|V| |VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|25|-|mV/°C| |VGS(th)temperature coefficient|VGS(th)/TJ||-|-2.6|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.6|-|1.5|V| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 12 V|-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VDS= 20 V, VGS= 0 V|-|-|1|μA| |||VDS= 20 V, VGS= 0 V, TJ= 85 °C|-|-|10|| |On-state drain currenta|ID(on)|VDS 5 V, VGS= 4.5 V|2|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= 4.5 V, ID= 1 A|-|0.195|0.235|| |||VGS= 2.5 V, ID= 0.3 A|-|0.255|0.306|| |Forward transconductance|gfs|VDS= 10 V, ID= 1 A|-|3|-|S| |**Dynamicb**||||||| |Input capacitance|Ciss|VDS= 10 V, VGS= 0 V, f = 1 MHz|-|62|-|pF| |Output capacitance|Coss||-|20|-|| |Reverse transfer capacitance|Crss||-|7|-|| |Total gate charge|Qg|VDS= 10 V, VGS= 10 V, ID= 1 A|-|2|3|nC| |||VDS= 10 V, VGS= 4.5 V, ID= 1 A|-|0.9|1.4|| |Gate-source charge|Qgs||-|0.2|-|| |Gate-drain charge|Qgd||-|0.2|-|| |Gate resistance|Rg|f = 1 MHz|2.4|12|24|| |Turn-on delay time|td(on)|VDD= 10 V, RL= 12.5<br>ID 0.8 A, VGEN= 10 V, Rg= 1|-|4|8|ns| |Rise time|tr||-|13|20|| |Turn-off delay time|td(off)||-|11|20|| |Fall time|tf||-|9|18|| |Turn-on delay time|td(on)|VDD= 10 V, RL= 12.5<br>ID 0.8 A, VGEN= 4.5 V, Rg= 1|-|6|12|| |Rise time|tr||-|16|24|| |Turn-off delay time|td(off)||-|13|20|| |Fall time|tf||-|10|20|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous source-drain diode current|IS|TC= 25 °C|-|-|0.35|A| |Pulse diode forward currenta|ISM||-|-|2|| |Body diode voltage|VSD|IS= 0.8 A|-|0.8|1.2|V| |Body diode reverse recovery time|trr|IF= 0.8 A, di/dt = 100 A/μs|-|2|4|nC| |Body diode reverse recovery charge|Qrr||-|8|16|ns| |Reverse recovery fall time|ta||-|5|-|| |Reverse recovery rise time|tb||-|3|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2% b. Guaranteed by design, not subject to production testing _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S25-0533-Rev. D, 19-May-2025 Document Number: 67876 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1902CDL** Vishay Siliconix **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) www.vishay.com **==> picture [462 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>VGS = 5 V thru 2.5 V<br>0.8<br>1.5<br>Aan ey [|]<br>VGS = 2 V 0.6<br>1.0<br>i— 0.4 | 7<br>TC = 25 °C<br>0.5<br>Woof 0.2 ae<br>VGS = 1.5 V TC = 125 °C<br>TC = - 55 °C<br>0 py—______— 0 |<br>0 0.5 1.0 1.5 2.0 0 0.5 1 1.5 2<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>0.40 80<br>0.34 Ciss<br>TTT 60 CL.<br>0.28 VGS = 2.5 V<br>40<br>0.22<br>VGS = 4.5 V<br>seq<br>20 Coss<br>0.16 ee NN<br>Crss<br>0.10 Te 0 Ca<br>0 0.5 1 1.5 2 0 5 10 15 20<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current and Gate Voltage Capacitance<br>10 1.8<br>ID = 1 A ID = 1 A VGS = 4.5 V<br>8 V DS = 10 V<br>TT ph 1.5 :<br>6<br>1.2<br>VDS = 5 V VGS = 2.5 V<br>4 V DS = 16 V<br>0.9<br>2 Yo - nnezae<br>0 An 0.6 TELL<br>0 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 150<br>Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)<br> - Drain Current (A)ID - Drain Current (A)ID<br> - On-Resistance (Ω)<br>DS(on) C - Capacitance (pF)<br>R<br>(Normalized)<br> - On-Resistance<br> - Gate-to-Source Voltage (V) DS(on)<br>GS R<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br> Document Number: 67876 S25-0533-Rev. D, 19-May-2025 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1902CDL** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [185 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>T J = 150 °C<br>1<br>T J = 25 ° C<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br> **==> picture [186 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>ID = 1 A<br>0.4<br>TJ = 125 °C<br>0.3<br>TJ = 25 °C<br>0.2<br>0.1<br>1.8 2.6 3.4 4.2 5<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **On-Resistance vs. Gate-to-Source Voltage** **==> picture [193 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 1.20<br>1.05<br>ID = 250 μA<br>0.90<br>0.75<br>0.60<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [180 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>2<br>0<br>0.001 0.01 0.1 1 10<br>Time (s)<br>Power (W)<br>**----- End of picture text -----**<br> **Threshold Voltage** **Single Pulse Power (Junction-to-Ambient)** **==> picture [186 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Limited by R DS(on) *<br>100 μs<br>1<br>1 ms<br>10 ms<br>0.1<br>100 ms<br>TC = 25 °C DC, 10s, 1s<br>Single Pulse BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br> - Drain Current (A)ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** S25-0533-Rev. D, 19-May-2025 Document Number: 67876 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1902CDL** Vishay Siliconix www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [191 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>0.9<br>0.6<br>0.3<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br> - Drain Current (A)ID<br>**----- End of picture text -----**<br> **Current Derating[a]** **==> picture [456 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5 0.4<br>0.4<br>0.3<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1<br>0 0.0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> **Power Derating, Junction-to-Foot** **Power Derating, Junction-to-Ambient** ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S25-0533-Rev. D, 19-May-2025 Document Number: 67876 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1902CDL** Vishay Siliconix ## www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [416 x 374] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1 0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1 0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> ## **Normalized Thermal Transient Impedance, Junction-to-Foot** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67876._ S25-0533-Rev. D, 19-May-2025 Document Number: 67876 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 _**© 2025 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2025 **1** THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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