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SI1553CDL-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 700 mA, 700 mA, 0.325 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.325ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 340mW
- Power Dissipation P Channel: 340mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 700mA
- Continuous Drain Current Id P Channel: 700mA
- Drain Source On State Resistance N Channel: 0.325ohm
- Drain Source On State Resistance P Channel: 0.325ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.147 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**Si1553CDL** www.vishay.com Vishay Siliconix ## **N- and P-Channel 20 V (D-S) MOSFET** **==> picture [110 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> SC-70 (6 leads)<br>SOT-363 Dual<br>S2<br>4<br>G2<br>5<br>D1<br>6<br>x 3<br>\ 4 2 D2<br>1 G1<br>S1<br>Top View<br>**----- End of picture text -----**<br> ## **Marking Code** : RH ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**<br>**N-CHANNEL**<br>**P-CHANNEL**|**PRODUCT SUMMARY**<br>**N-CHANNEL**<br>**P-CHANNEL**|**PRODUCT SUMMARY**<br>**N-CHANNEL**<br>**P-CHANNEL**| |---|---|---| |VDS (V)|**N-CHANNEL**<br>20|**P-CHANNEL**<br>-20| |RDS(on)max.(Ω)at VGS= ± 4.5 V|0.390|0.850| |RDS(on)max.(Ω)at VGS= ± 2.7 V|0.510|1.350| |RDS(on)max.(Ω)at VGS= ± 2.5 V|0.578|1.480| |Qgtyp.(nC)|0.55|0.95| |ID (A) a|0.7|-0.5| |Configuration|N- andp-pair|| ## **FEATURES** - TrenchFET[®] power MOSFET - 100 % Rg tested - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~~a~~ ## **APPLICATIONS** - Load switch - DC/DC converter **==> picture [166 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> D 1 S2<br>G2<br>G 1<br>S 1 D2<br>N-Channel MOSFET P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** Package SC70-6 Lead (Pb)-free and halogen-free Si1553CDL-T1-GE3 |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)| |---|---|---|---|---|---| |**PARAMETER**<br>~~eG~~<br>~~Sn~~||**SYMBOL**<br>~~eG~~|**N-CHANNEL**<br>~~eG~~<br>~~Cn~~|**P-CHANNEL**<br>~~eG~~|**UNIT**<br>~~eG~~| |Drain-source voltage<br>~~eG~~<br>~~Sn~~||VDS<br>~~eG~~|20<br>~~eG~~<br>~~Cn~~|-20<br>~~eG~~|V<br>~~eG~~| |Gate-source voltage<br>~~Sn~~<br>~~RG~~<br>~~|~~<br>~~sd~~||VGS<br>~~RG~~|± 12<br>~~Cn~~<br>~~RG~~<br>~~ee~~||| |Continuous drain current (TJ= 150 °C)<br>~~Sn~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~a~~|TC= 25 °C<br>~~n~~<br>~~|~~<br>~~sd~~<br>~~|~~|ID<br>|0.7<br>~~Cn~~<br>~~ee~~<br>~~ee~~|-0.5<br>~~ee~~<br>~~ee~~|A<br>~~ee~~| ||TC= 70 °C<br>~~|~~<br>~~sd~~<br>~~|~~<br>~~|~~||0.6<br>~~ee~~<br>~~ee~~<br>~~ee~~|-0.4<br>~~ee~~<br>~~ee~~<br>~~ee~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~<br>~~|sd~~||0.7b, c<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|-0.4b, c<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|| ||TA= 70 °C<br>~~|~~<br>~~|sd~~<br>~~res~~||0.5b, c<br>~~ee~~<br>~~**ee**~~<br>~~es~~|-0.4b, c<br>~~ee~~<br>~~**ee**~~<br>~~eee~~|| |Source-drain current diode current<br>~~|~~<br>~~a~~<br>~~|~~|TC= 25 °C<br>~~|sd~~<br>~~res~~<br>~~|~~|IS<br>|0.3<br>~~**ee**~~<br>~~es~~|-0.3<br>~~**ee**~~<br>~~eee~~|| ||TA= 25 °C<br>~~|sd~~<br>~~res~~<br>~~|~~||0.2b, c<br>~~**ee**~~<br>~~es~~|-0.2b, c<br>~~**ee**~~<br>~~eee~~|| |Pulsed drain current(t = 300μs)<br>~~| sd ~~<br>~~a~~<br>~~res~~<br>~~|~~<br>~~eG~~<br>~~|~~||IDM<br> <br>~~eG~~|2<br> ~~**ee**~~<br>~~es ~~<br>~~eG~~<br>~~ee~~|-1<br>~~**ee**~~<br> ~~eee~~<br>~~eG~~<br>~~ee~~|| |Maximum power dissipation<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~|~~<br>~~|~~|PD|0.34<br>~~ee~~<br>~~ee~~|0.34<br>~~ee~~<br>~~ee~~|W<br>~~ee~~| ||TC= 70 °C<br>~~|~~<br>~~|~~<br>~~|~~||0.22<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.22<br>~~ee~~<br>~~ee~~<br>~~ee~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~||0.29b, c<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.29b, c<br>~~ee~~<br>~~ee~~<br>~~ee~~|| ||TA= 70 °C<br>~~|~~<br>~~|~~||0.18b, c<br>~~ee~~<br>~~ee~~|0.18b, c<br>~~ee~~<br>~~ee~~|| |Operating junction and storage temperature range<br>~~|~~<br>~~DG~~||TJ,Tstg<br>~~DG~~|-55 to 150<br>~~ee~~<br>~~DG~~||°C<br>~~DG~~| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**N-CHANNEL**||**P-CHANNEL**||**UNIT**| ||||**TYP.**|**MAX.**|**TYP.**|**MAX.**|| |Maximumjunction-to-ambientb, d|t≤10 s|RthJA|365|438|365|438|°C/W| |Maximumjunction-to-foot(Drain)|SteadyState|RthJF|308|370|308|370|| ## **Notes** a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel). S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.a**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|N-Ch<br>P-Ch|20|-|-|V| |||VGS= 0 V, ID= -250 μA||-20|-|-|| |VDStemperature coefficient|ΔVDS/TJ|ID= 250 μA|N-Ch<br>P-Ch|-|24|-|mV/°C| |||ID= -250 μA||-|-13|-|| |VGS(th)temperature coefficient|ΔVGS(th)/TJ|ID= 250 μA|N-Ch<br>P-Ch|-|-1.8|-|| |||ID= -250 μA||-|2.3|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|N-Ch<br>P-Ch|0.6|-|1.5|V| |||VDS= VGS, ID= -250 μA||-0.6|-|-1.5|| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 12 V|N-Ch<br>P-Ch|-|-|± 100|nA| |||||-|-|± 100|| |Zero gate voltage drain current|IDSS|VDS= 20 V, VGS= 0 V|N-Ch<br>P-Ch|-|-|1|μA| |||VDS= -20 V, VGS= 0 V||-|-|-1|| |||VDS= 20 V, VGS= 0 V, TJ= 55 °C|N-Ch<br>P-Ch|-|-|10|| |||VDS= -20 V, VGS= 0 V, TJ= 55 °C||-|-|-10|| |On-state drain currentb|ID(on)|VDS= 5 V, VGS= 5 V|N-Ch<br>P-Ch|2|-|-|A| |||VDS= -5 V, VGS= -5 V||-1|-|-|| |Drain-source on-state resistanceb|RDS(on)|VGS= 4.5 V, ID= 0.7 A|N-Ch<br>P-Ch|-|0.325|0.390|Ω| |||VGS= -4.5 V, ID= -0.4 A||-|0.708|0.850|| |||VGS= 2.7 V, ID= 0.4 A|N-Ch<br>P-Ch|-|0.425|0.510|| |||VGS= -2.7 V, ID= -0.2 A||-|1.130|1.350|| |||VGS= 2.5 V, ID= 0.4 A|N-Ch<br>P-Ch|-|0.462|0.578|| |||VGS= -2.5V, ID= -0.2 A||-|1.230|1.480|| |Forward transconductanceb|gfs|VDS= 15 V, ID= 0.7 A|N-Ch<br>P-Ch|-|1.5|-|S| |||VDS= -15 V, ID= -0.5 A||-|0.8|-|| |**Dynamica**|||||||| |Input capacitance|Ciss|N-Channel<br>VDS= 10 V, VGS= 0 V, f = 1 MHz<br>P-Channel<br>VDS= -10 V, VGS= 0 V, f = 1 MHz|N-Ch<br>P-Ch|-|38|-|pF| |||||-|43|-|| |Output capacitance|Coss||N-Ch<br>P-Ch|-|14|-|| |||||-|16|-|| |Reverse transfer capacitance|Crss||N-Ch<br>P-Ch|-|6|-|| |||||-|10|-|| |Total gate charge|Qg|VDS= 10 V, VGS= 10 V, ID= 0.7 A|N-Ch<br>P-Ch|-|1.2|1.8|nC| |||VDS= -10 V, VGS= -10 V, ID= -0.5 A||-|1.9|3|| |||N-Channel<br>VDS= 10 V, VGS= 4.5 V ID= 0.5 A<br>P-Channel<br>VDS= -10 V, VGS= -4.5 V, ID= -0.4 A|N-Ch<br>P-Ch|-|0.55|1.1|| |||||-|0.95|1.5|| |Gate-source charge|Qgs||N-Ch<br>P-Ch|-|0.15|-|| |||||-|0.25|-|| |Gate-drain charge|Qgd||N-Ch<br>P-Ch|-|0.15|-|| |||||-|0.25|-|| |Gate resistance|Rg|f = 1 MHz|N-Ch|1.5|7.2|14.4|Ω| ||||P-Ch|2.1|10.3|20.6|| S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.a**|**MAX.**|**UNIT**| |**Dynamica**|||||||| |Turn-on delay time|td(on)|N-Channel<br>VDD= 10 V, RL= 20Ω<br>ID ≅0.5 A, VGEN= 10 V, Rg= 1Ω<br>P-Channel<br>VDD= -10 V, RL= 25Ω<br>ID ≅-0.4 A, VGEN= -10 V, Rg= 1Ω|N-Ch<br>P-Ch|-|2|4|ns| |||||-|2|4|| |Rise time|tr||N-Ch<br>P-Ch|-|14|21|| |||||-|9|18|| |Turn-off delay time|td(off)||N-Ch<br>P-Ch|-|11|20|| |||||-|10|20|| |Fall time|tf||N-Ch<br>P-Ch|-|7|14|| |||||-|7|14|| |Turn-on delay time|td(on)|N-Channel<br>VDD= 10 V, RL= 20Ω<br>ID ≅0.5 A, VGEN= 4.5 V, Rg= 1Ω<br>P-Channel<br>VDD= -10 V, RL= 25Ω<br>ID ≅-0.4 A, VGEN= -4.5 V, Rg= 1Ω|N-Ch<br>P-Ch|-|16|24|| |||||-|15|23|| |Rise time|tr||N-Ch<br>P-Ch|-|22|33|| |||||-|15|23|| |Turn-off delay time|td(off)||N-Ch<br>P-Ch|-|22|33|| |||||-|12|20|| |Fall time|tf||N-Ch<br>P-Ch|-|13|20|| |||||-|8|16|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous source-drain diode current|IS|TC= 25 °C|N-Ch<br>P-Ch|-|-|0.3|A| |||||-|-|-0.3|| |Pulse diode forward currenta|ISM||N-Ch<br>P-Ch|-|-|2|| |||||-|-|-1|| |Body diode voltage|VSD|IS= 0.5 A|N-Ch<br>P-Ch|-|0.8|1.2|V| |||IS= -0.4 A||-|-0.8|-1.2|| |Body diode reverse recovery time|trr|N-Channel<br>IF= 0.5 A, dI/dt = 100 A/μs, TJ= 25 °C<br>P-Channel<br>IF= -0.4 A, dI/dt = -100 A/μs, TJ= 25 °C|N-Ch<br>P-Ch|-|8|15|ns| |||||-|12|20|| |Body diode reverse recovery charge|Qrr||N-Ch<br>P-Ch|-|1|2|nC| |||||-|5|10|| |Reverse recovery fall time|ta||N-Ch<br>P-Ch|-|4|-|ns| |||||-|9|-|| |Reverse recovery rise time|tb||N-Ch<br>P-Ch|-|4|-|| |||||-|3|-|| ## **Notes** a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [194 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>VGS = 5 V thru 3 V<br>VGS = 2.5 V<br>1.5<br>1<br>VGS = 2 V<br>0.5<br>VGS = 1.5 V<br>0<br>0 0.5 1 1.5 2<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>0.7<br>0.6<br>0.5 VGS = 2.5 V<br>VGS =2.7 V<br>0.4<br>VGS = 4.5 V<br>0.3<br>0.2<br>0 0.5 1 1.5 2<br>ID - Drain Current (A)<br> - Drain Current (A)<br>ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Drain Current and Gate Voltage** **==> picture [194 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ID = 0.7 A<br>8 V DS = 10 V<br>6<br>VDS = 5 V<br>4 VDS = 16 V<br>2<br>0<br>0 0.3 0.6 0.9 1.2<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [197 x 573] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>0.4<br>0.3<br>TC = 25 °C<br>0.2<br>0.1<br>TC = 125 °C<br>0 TC = - 55 °C<br>0 0.5 1 1.5 2<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>50<br>40<br>Ciss<br>30<br>20<br>Coss<br>10<br>Crss<br>0<br>0 5 10 15 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.7<br>ID = 0.7 A<br>1.5<br>1.3 V GS = 4.5 V<br>1.1<br>0.9<br>VGS = 2.7 V<br>0.7<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br> - Drain Current (A)<br>ID<br>C - Capacitance (pF)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br> S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [193 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>T J = 150 °C<br>1<br>T J = 25 °C<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [198 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1<br>1<br>0.9<br>ID = 250 μA<br>0.8<br>0.7<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [194 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>ID = 0.7 A<br>0.7<br>0.6<br>0.5 T J = 125 °C<br>0.4<br>TJ = 25 °C<br>0.3<br>0.2<br>2 4 5<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>6.4<br>4.8<br>3.2<br>1.6<br>0<br>0.001 0.01 0.1 1 10<br>Time (s)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [158 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse Power, Junction-to-Ambient<br>**----- End of picture text -----**<br> **==> picture [8 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>**----- End of picture text -----**<br> **==> picture [197 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> Limited by R DS(on) *<br>1 100 μs<br>1 ms<br>0.1 10 ms<br>100 ms<br>TC = 25 ° C 1 s<br>Single Pulse BVDSS Limited 10 s, DC<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [197 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Current Derating[a]** **==> picture [465 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 0.45 0.32<br>0.36<br>0.24<br>0.27<br>0.16<br>0.18<br>0.08<br>0.09<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** www.vishay.com Vishay Siliconix ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [435 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1 PDM<br>0.1<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 486 °C/W<br>Single Pulse 3. T JM - T A = P DM Z thJA [(t)]<br>4. Surface Mounted<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **==> picture [230 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Normalized Thermal Transient Impedance, Junction-to-Foot<br>**----- End of picture text -----**<br> S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **7** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [194 x 589] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>VGS = 5 V thru 3 V<br>0.8 V GS = 2.5 V<br>0.6<br>0.4 V GS = 2 V<br>0.2<br>VGS = 1.5 V<br>0<br>0 0.5 1 1.5 2<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>1.8<br>1.5<br>VGS = 2.5 V<br>1.2 V GS = 2.7 V<br>0.9<br>VGS = 4.5 V<br>0.6<br>0.3<br>0 0.2 0.4 0.6 0.8 1<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current and Gate Voltage<br>10<br>ID = 0.5 A<br>8<br>VDS = 10 V<br>6<br>VDS = 5 V<br>4<br>VDS = 16 V<br>2<br>0<br>0 0.5 1 1.5 2<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Drain Current (A)<br>ID<br> - On-Resistance (Ω)<br>DS(on)<br>R<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [197 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2<br>0.15<br>0.1<br>TC = 25 °C<br>0.05<br>TC = 125 °C TC = - 55 °C<br>0<br>0 0.5 1 1.5 2<br>VGS - Gate-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Transfer Characteristics** **==> picture [197 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60<br>Ciss<br>40<br>20 C oss<br>Crss<br>0<br>0 5 10 15 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.6<br>1.4<br>VGS = 4.5 V<br>1.2<br>1.0<br>0.8<br>VGS = 2.7 V<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>C - Capacitance (pF)<br>(Normalized)<br> - On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br> S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **8** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [194 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJ = 150 °C<br>1<br>TJ = 25 °C<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [198 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>1.05<br>0.9 ID = 250 μA<br>0.75<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [193 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>ID = 0.4 A<br>1.5<br>1 T J = 125 °C<br>TJ = 25 °C<br>0.5<br>0<br>0 2 4 6 8<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>6.4<br>4.8<br>3.2<br>1.6<br>0<br>0.001 0.01 0.1 1 10<br>Time (s)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [158 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse Power, Junction-to-Ambient<br>**----- End of picture text -----**<br> **==> picture [202 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Limited by RDS(on)*<br>1<br>1 ms<br>0.1 10 ms<br>100 ms<br>1 s<br>0.01 10 s, DC<br>T C = 25 °C BVDSS Limited<br>Single Pulse<br>0.001<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **9** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [199 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6<br>0.45<br>0.3<br>0.15<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Current Derating[a]** **==> picture [465 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 0.45 0.32<br>0.36<br>0.24<br>0.27<br>0.16<br>0.18<br>0.08<br>0.09<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **10** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Si1553CDL** www.vishay.com Vishay Siliconix ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [435 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1 PDM<br>0.1<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 486 °C/W<br>Single Pulse 3. T JM - T A = P DM Z thJA [(t)]<br>4. Surface Mounted<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **==> picture [230 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Normalized Thermal Transient Impedance, Junction-to-Foot<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67693._ S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 **11** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ## ~~a~~ **Package Information Vishay Siliconix** **==> picture [482 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 6 5 4 E1 E oteeee DimAA1 ee Min 0.90– Nom –– Max 1.100.10 0.035 Min – Nom –– ee Max 0.0430.004<br>1 2 3 a A2 0.80 – 1.00 0.031 – 0.039<br>-B- ee b 0.15 – 0.30 0.006 – 0.012<br>ee c 0.10 – 0.25 0.004 – 0.010<br>e b<br>e1 ee D 1.80 2.00 2.20 0.071 0.079 0.087<br>a ee E 1.80 2.10 2.40 0.071 0.083 0.094<br>D -A-<br>- c ee E1 1.15 1.25 1.35 0.045 0.049 0.053<br>a e 0.65BSC 0.026BSC<br>A2 A ee e1 1.20 1.30 1.40 0.047 0.051 0.055<br>ee L 0.10 0.20 0.30 0.004 0.008 0.012<br>We | L ee 7 Nom 7 Nom<br>A1 ECN: S-03946—Rev. B, 09-Jul-01<br>DWG: 5550<br>**----- End of picture text -----**<br> Document Number: 71154 06-Jul-01 www.vishay.com **1** **AN814** ~~ee~~ **Vishay Siliconix** ## **Dual-Channel LITTLE FOOT** ® **SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance** ## INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. ## PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. **==> picture [113 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> SOT-363<br>SC-70 (6-LEADS)<br>S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>Top View<br>**----- End of picture text -----**<br> **FIGURE 1.** For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). ## EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, _Basic Pad Patterns_ . The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. ## THERMAL PERFORMANCE ## **Junction-to-Foot Thermal Resistance (the Package Performance)** Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300 C/W typical, 350 C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. ## **Junction-to-Ambient Thermal Resistance (dependent on PCB size)** ## BASIC PAD PATTERNS See Application Note 826, _Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFET_ s, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power The typical R θ JA for the dual 6-pin SC-70 is 400 C/W steady state. Maximum ratings are 460 C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. Document Number: 71237 12-Dec-03 www.vishay.com **1** ## **AN814** ~~CISA~~ **Vishay Siliconix** |SC-70 (6-PIN)<br>~~|~~|SC-70 (6-PIN)<br>~~|~~| |---|---| |**Room Ambient 25 C**<br>~~|~~|**Elevated Ambient 60 C**| |PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>25oC<br>400oC W<br>PD<br>312 mW<br>~~|~~<br>~~Tf~~|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>60oC<br>400oC W<br>PD<br>225 mW<br>~~oe~~| NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. ## **Testing** To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of R θ JA for the dual 6-pin SC-70 are as follows: |LITTLE FOOT SC-70 (6-PIN)<br>~~Pe~~|LITTLE FOOT SC-70 (6-PIN)<br>~~Pe~~| |---|---| |1) Minimum recommended pad pattern (see<br>Figure 2) on the EVB of 0.5 inches x<br>0.6 inches.|518 C/W| |2) Industry standard 1” square PCB with<br>maximum copper both sides.<br>~~ee~~|413 C/W<br>~~ee~~| **==> picture [282 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Dual EVB<br>400<br>300<br>A A et a<br>200<br>Ue<br>A VA<br>100<br>J 1” Square FR4 PCB<br>0 LS<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Time (Secs)<br>FIGURE 2. Comparison of Dual SC70-6 on EVB and 1”<br> Square FR4 PCB.<br>Thermal Resistance (C/W)<br>**----- End of picture text -----**<br> The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ## ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). Document Number: 71237 12-Dec-03 www.vishay.com **2** **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead** **==> picture [178 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 0.067<br>(1.702)<br>0.016 0.026 0.010<br>(0.406) (0.648) (0.241)<br>0.026 (0.648)<br>0.096 (2.438) 0.045 (1.143)<br>**----- End of picture text -----**<br> **==> picture [95 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>**----- End of picture text -----**<br> **==> picture [48 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Return to Index<br>**----- End of picture text -----**<br> Return to Index ## www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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