SI1427EDH-T1-GE3

_**New Product**_ 

**Si1427EDH** 

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## Vishay Siliconix 

## **P-Channel 20 V (D-S) MOSFET** 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|---|
|**VDS (V)**|**RDS(on) (**Ω**)**|**ID (A)a**|**Qg (Typ.)**|
|- 20|0.064 at VGS= - 4.5 V|- 2.0e|7.6 nC|
||0.085 at VGS= - 2.5 V|- 2.0e||
||0.110 at VGS= - 1.8 V|- 2.0e||
||0.165 at VGS= - 1.5 V|- 0.5||



## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- TrenchFET[®] Power MOSFET 

- 100 % R Tested g 

- Typical ESD Performance 2000 V 

- Built in ESD Protection with Zener Diode 

- Compliant to RoHS Directive 2002/95/EC 

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## **APPLICATIONS** 

- Load Switch for Portable Devices 

   - Cellular Phone 

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SOT-363<br>SC-70 (6-LEADS)<br>D 1 6 D<br>Marking Code<br>D 2 5 D<br>BR XX<br>Lot Traceability<br>G 3 4 S and Date Code<br>Part # Code<br>Top View<br>YY<br>**----- End of picture text -----**<br>


**Ordering Information:** Si1427EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) 

- DSC 

- Portable Game Console 

- MP3 

- GPS 

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S<br>G<br>R<br>**----- End of picture text -----**<br>


D P-Channel MOSFET 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise|noted)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Limit**|**Unit**|
|Drain-Source Voltage||VDS|- 20|V|
|Gate-Source Voltage||VGS|± 8||
|Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|- 2.0a, e|A|
||TC= 70 °C||- 2.0e||
||TA= 25 °C||- 2.0b, c, e||
||TA= 70 °C||- 2.0b, c, e||
|Pulsed Drain Current||IDM|- 8||
|Continuous Source-Drain Diode Current|TC= 25 °C|IS|- 2.0a, e||
||TA= 25 °C||- 1.3b, c||
|Maximum Power Dissipation|TC= 25 °C|PD|2.8|W|
||TC= 70 °C||1.8||
||TA= 25 °C||1.56b, c||
||TA= 70 °C||1b, c||
|Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150|°C|
|SolderingRecommendations(Peak Temperature)d, e|||260||



|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**||
|---|---|---|---|---|---|
|**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**|
|Maximum Junction-to-Ambientb, d|t≤5 s|RthJA|60|80|°C/W|
|Maximum Junction-to-Foot (Drain)|Steady State|RthJF|34|45||



Notes: 

a. TC = 25 °C. 

b. Surface mounted on 1" x 1" FR4 board. 

c. t = 5 s. 

d. Maximum under steady state conditions is 125 °C/W. 

e. Package limited. 

Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

www.vishay.com 1 

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

_**New Product**_ 

## **Si1427EDH** 

## Vishay Siliconix 

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|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static**|||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= - 250 µA|- 20|||V|
|VDSTemperature Coefficient|ΔVDS/TJ|ID= - 250 µA||- 13||mV/°C|
|VGS(th) Temperature Coefficient|ΔVGS(th)/TJ|||2.5|||
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 µA|- 0.4||- 1|V|
|Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 8 V|||± 6|µA|
|||VDS= 0 V, VGS= ± 4.5 V|||± 0.5||
|Zero Gate Voltage Drain Current|IDSS|VDS= - 20 V, VGS= 0 V|||- 1||
|||VDS= - 20 V, VGS= 0 V, TJ= 55 °C|||- 10||
|On-State Drain Currenta|ID(on)|VDS≤- 5 V, VGS= - 4.5 V|- 8|||A|
|Drain-Source On-State Resistancea|RDS(on)|VGS= - 4.5 V, ID= - 3.0 A||0.050|0.064|Ω|
|||VGS= - 2.5 V, ID= - 2.0 A||0.065|0.085||
|||VGS= - 1.8 V, ID= - 1.0 A||0.090|0.110||
|||VGS= - 1.5 V, ID= - 0.5 A||0.110|0.165||
|Forward Transconductancea|gfs|VDS= - 10 V, ID= - 3.0 A||12||S|
|**Dynamicb**|||||||
|Total Gate Charge|Qg|VDS= - 10 V, VGS= - 8 V, ID= - 5.3 A||14|21|nC|
|Gate-Source Charge||VDS= - 10 V, VGS= - 4.5 V, ID= - 5.3 A||7.6|12||
||Qgs|||0.8|||
|Gate-Drain Charge|Qgd|||3.1|||
|Gate Resistance|Rg|f = 1 MHz|0.4|2|4|kΩ|
|Turn-On Delay Time|td(on)|VDD= - 10 V, RL= 2.3Ω<br>ID ≅- 4.3 A, VGEN= - 4.5 V, Rg= 1Ω||0.20|0.3|µs|
|Rise Time|tr|||1.00|1.50||
|Turn-Off Delay Time|td(off)|||4.00|6.00||
|Fall Time|tf|||2.00|3.00||
|Turn-On Delay Time|td(on)|VDD= - 10 V, RL= 2.3Ω<br>ID ≅- 4.3 A, VGEN= - 8 V, Rg= 1Ω||0.09|0.14||
|Rise Time|tr|||0.40|0.60||
|Turn-Off Delay Time|td(off)|||5.20|7.80||
|Fall Time|tf|||2.30|3.50||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous Source-Drain Diode Current|IS|TC= 25 °C|||- 2.0|A|
|Pulse Diode Forward Current|ISM||||- 8||
|Body Diode Voltage|VSD|IS= - 3 A, VGS= 0 V||- 0.8|- 1.2|V|
|Body Diode Reverse Recovery Time|trr|IF= - 3 A, dI/dt = 100 A/µs, TJ= 25 °C||30|60|ns|
|Body Diode Reverse Recovery Charge|Qrr|||20|40|nC|
|Reverse Recovery Fall Time|ta|||13||ns|
|Reverse Recovery Rise Time|tb|||17|||



Notes: 

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. 

b. Guaranteed by design, not subject to production testing. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

www.vishay.com 2 

Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

This datasheet is subject to change without notice. 

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

_**New Product**_ 

**Si1427EDH** 

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## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1.5<br>1.2<br>TJ = 25 °C<br>0.9<br>0.6<br>0.3<br>0.0<br>0 3 6 9 12 15<br>VGS - Gate-to-Source Voltage (V)<br>Gate Current vs. Gate-Source Voltage<br>20<br>16<br>VGS = 5 V thru 2.5 V<br>12<br>VGS = 2 V<br>8<br>4 V GS = 1.5 V<br>VGS = 1 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>0.21<br>0.18<br>0.15<br>VGS = 1.8 V<br>0.12<br>VGS = 1.5 V<br>0.09<br>VGS = 2.5 V<br>0.06<br>0.03 V GS = 4.5 V<br>0.00<br>0 4 8 12 16 20<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current<br> - Gate Current (mA)<br>IGSS<br>- Drain Current (A)<br>I D<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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10 [-2]<br>10 [-3]<br>10 [-4] TJ = 150 °C<br>10 [-5]<br>TJ = 25 °C<br>10 [-6]<br>10 [-7]<br>10 [-8]<br>10 [-9]<br>0 3 6 9 12 15<br>VGS - Gate-to-Source Voltage (V)<br>Gate Current vs. Gate-Source Voltage<br>10<br>8<br>6<br>4<br>TC = 25 °C<br>2<br>TC = 125 °C<br>TC = - 55 °C<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>8<br>ID = 5.3 A VDS = 10 V<br>6<br>VDS = 5 V<br>VDS = 16 V<br>4<br>2<br>0<br>0 3 6 9 12 15<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br> - Gate Current (A)<br>IGSS<br>- Drain Current (A)<br>I D<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

www.vishay.com 3 

This datasheet is subject to change without notice. 

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

_**New Product**_ 

## **Si1427EDH** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1.5 100<br>1.4<br>VGS = 4.5 V, 2.5 V; ID = 3.2 A<br>1.3<br>TJ = 150 °C<br>10<br>1.2<br>1.1<br>1.0 VGS = 1.8 V; ID = 1.5 A TJ = 25 °C<br>1<br>0.9<br>0.8<br>0.7 0.1<br>- 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)<br>- On-Resistance<br>(Normalized)<br>- Source Current (A)<br>RDS(on) I S<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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Soure-Drain Diode Forward Voltage<br>**----- End of picture text -----**<br>


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0.18 0.8<br>0.15<br>0.7<br>ID = 3.2 A; TJ = 125 °C<br>ID = 250 µA<br>0.12<br>ID = 0.5 A; TJ = 125 °C 0.6<br>0.09<br>0.5<br>0.06 I D = 3.2 A; T J = 25 °C<br>ID = 0.5 A; TJ = 25 °C 0.4<br>0.03<br>0.00 0.3<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 50 - 25 0 25 50 75 100 125 150<br>VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)<br>         On-Resistance vs. Gate-to-Source Voltage Threshold Voltage<br>30  10 Limited by RDS(on)*<br>25<br>1 ms<br>20  1<br>10 ms<br>15<br>100 ms<br>10  0.1 1 s<br>10 s<br>DC<br>5  T A [= 25 ][°][C]<br>Single Pulse<br>BVDSS Limited<br>0  0.01<br>0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100<br>Time (s) VDS - Drain-to-Source Voltage (V)<br>Single Pulse Power, Junction-to-Ambient * VGS > minimum VGS at which RDS(on) is specified<br>Safe Operating Area, Junction-to-Ambient<br>)Ω<br>(V)<br>GS(th)<br>- On-Resistance ( V<br>DS(on)<br>R<br>Power (W)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


www.vishay.com 4 

Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

This datasheet is subject to change without notice. 

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

_**New Product**_ 

**Si1427EDH** 

**==> picture [59 x 48] intentionally omitted <==**

## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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6<br>5<br>4<br>3<br>2<br>Package Limited<br>1<br>0<br>0  25  50  75  100  125  150<br>TF - Foot Temperature (°C)<br>Current Derating*<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150<br>TC - Foot Temperature (°C)<br>Power Derating<br>Power (W)<br>**----- End of picture text -----**<br>


* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 

Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

www.vishay.com 5 

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

_**New Product**_ 

## **Si1427EDH** 

## Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Foot** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65526._ 

www.vishay.com 6 

Document Number: 65526 S11-0453-Rev. B, 14-Mar-11 

This datasheet is subject to change without notice. 

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## ~~a~~ **Package Information Vishay Siliconix** 

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6 5 4 E1 E oteeee DimAA1 ee Min 0.90– Nom –– Max 1.100.10 0.035 Min – Nom –– ee Max 0.0430.004<br>1 2 3 a A2 0.80 – 1.00 0.031 – 0.039<br>-B- ee b 0.15 – 0.30 0.006 – 0.012<br>ee c 0.10 – 0.25 0.004 – 0.010<br>e b<br>e1 ee D 1.80 2.00 2.20 0.071 0.079 0.087<br>a ee E 1.80 2.10 2.40 0.071 0.083 0.094<br>D -A-<br>- c ee E1 1.15 1.25 1.35 0.045 0.049 0.053<br>a e 0.65BSC 0.026BSC<br>A2 A ee e1 1.20 1.30 1.40 0.047 0.051 0.055<br>ee L 0.10 0.20 0.30 0.004 0.008 0.012<br>We | L ee 7 Nom 7 Nom<br>A1 ECN: S-03946—Rev. B, 09-Jul-01<br>DWG:  5550<br>**----- End of picture text -----**<br>


Document Number: 71154 06-Jul-01 

www.vishay.com 

**1** 

**AN815** ~~Se~~ **Vishay Siliconix** 

## **Single-Channel LITTLE FOOT** ® **SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance** 

## INTRODUCTION 

The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal  performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small  to medium load applications where a miniaturized package is required. Devices in this package come in a range  of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the single-channel version. 

The evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as in Figure 2. The board allows examination from the outer pins to 6-pin DIP connections, permitting test sockets to be used in evaluation testing.  See Figure 3. 

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52 (mil)<br>BASIC PAD PATTERNS<br>6 5 4<br>See Application Note 826,  Recommended Minimum Pad<br>Patterns With Outline Drawing Access for Vishay Siliconix<br>96 (mil)<br>MOSFET s, (http://www.vishay.com/doc?72286) for the basic 71 (mil)<br>pad layout and dimensions. These pad patterns are sufficient<br>for the low to medium power applications for which this<br>package is intended. Increasing the drain pad pattern yields a 1 2 3 26 (mil)<br>reduction in  thermal resistance and is a preferred footprint. 13 (mil)<br>The availability of four drain leads rather than the traditional [i . - a,1<br>single drain lead allows a better thermal path from the package 0, 0 (mil)<br>to the PCB and external environment.<br>-}—+|<br>18 (mil)<br>++<br>26 (mil)<br>PIN-OUT —<br>16 (mil)<br>**----- End of picture text -----**<br>


Figure 1 shows the pin-out description and Pin 1 identification.The pin-out of this device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. 

**FIGURE  2.** SC-70 (6 leads) Single 

**SOT-363 SC-70 (6-LEADS)** 

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D 1 6 D<br>D 2 5 D<br>G 3 4 S<br>Top View<br>**----- End of picture text -----**<br>


The thermal performance of the single 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was first conducted on the traditional Alloy 42 leadframe and was then repeated using the 1-inch[2] PCB with dual-side copper coating. 

**FIGURE  1.** 

For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) 

Document Number:  71334 12-Dec-03 

www.vishay.com 

**1** 

**AN815** 

## **Vishay Siliconix** 

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Front of Board SC70-6<br>**----- End of picture text -----**<br>


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Back of Board SC70-6<br>Vishay Siliconix<br>e<br>@ @<br>e e<br>vishay.com<br>**----- End of picture text -----**<br>


**FIGURE  3.** 

## THERMAL PERFORMANCE 

|COOPER LEADFRAME<br>~~Loee~~<br>~~ee~~|COOPER LEADFRAME<br>~~Loee~~<br>~~ee~~|
|---|---|
|**Room Ambient 25 C**<br>~~Loee~~|**Elevated Ambient 60 C**<br>~~ee~~|
|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>25oC<br>124oC W<br>PD<br>1.01 W<br>~~ee~~<br>_<br>~~=~~|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>60oC<br>124oC W<br>PD<br>726 mW<br>~~ee~~<br>= ~~——~~|



## **Junction-to-Foot Thermal Resistance (Package Performance)** 

The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. 

A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version. 

As can be seen from the calculations above, the compact 6-pin SC-70 copper leadframe LITTLE FOOT power MOSFET can handle up to 1 W under the stated conditions. 

Thermal performance for the 6-pin SC-70 measured as junction-to-foot thermal resistance, where the “foot” is the drain lead of the device at the bottom where it meets the PCB. The junction-to-foot thermal resistance is typically 40 C/W in the copper leadframe and 163 C/W in the Alloy 42 leadframe — a four-fold improvement. This improved performance is obtained by the enhanced thermal conductivity of copper over Alloy 42. 

## **Testing** 

To further aid comparison of copper and Alloy 42 leadframes, Figure 5 illustrates single-channel 6-pin SC-70 thermal performance on two different board sizes and two different pad patterns. The measured steady-state values of R 0 JA for the two leadframes are as follows: 

|LITTLE FOOT 6-PIN SC-70<br>~~PO~~<br>~~ee~~|LITTLE FOOT 6-PIN SC-70<br>~~PO~~<br>~~ee~~|LITTLE FOOT 6-PIN SC-70<br>~~PO~~<br>~~ee~~|
|---|---|---|
|~~a~~|**Alloy 42**<br>~~a~~<br>~~ee~~|**Copper**<br>~~a~~|
|1) Minimum recommended pad pattern on<br>the EVB board V (see Figure 3.<br>~~a~~<br>~~-——}+—~~|329.7 C/W<br>~~a~~<br>~~ee~~<br>~~-——}+—~~|208.5 C/W<br>~~a~~<br>~~-——}+—~~|
|2) Industry standard 1-inch2PCB with<br>maximum copper both sides.<br>~~-——}+—~~|211.8 C/W<br>~~-——}+—~~|103.5 C/W<br>~~-——}+—~~|



## **Power Dissipation** 

The typical R JA for the single 6-pin SC-70 with copper leadframe is 103 C/W steady-state, compared with 212 C/W for the Alloy 42 version. The figures are based on the 1-inch[2] FR4 test board. The following example shows how the thermal | resistance impacts power dissipation for the two different leadframes at varying ambient temperatures. 

The results indicate that designers can reduce thermal resistance (R 0 JA) by 36% simply by using the copper leadframe device rather than the Alloy 42 version. In this example, a 121 ; C/W reduction was achieved without an increase in board area. If increasing in board size is feasible, a further 105 C/W reduction could be obtained by utilizing a 1-inch[2] square PCB area. 

|ALLOY 42 LEADFRAME<br>~~Lo~~<br>~~a~~<br>~~ee~~|ALLOY 42 LEADFRAME<br>~~Lo~~<br>~~a~~<br>~~ee~~|
|---|---|
|**Room Ambient 25 C**<br>~~Lo~~<br>~~a~~|**Elevated Ambient 60 C**<br>~~ee~~|
|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>25oC<br>212oC W<br>PD<br>590 mW<br>~~a~~<br>= ~~——~~|PD<br>TJ(max)<br>TA<br>R JA<br>PD<br>150oC<br>25oC<br>212oC W<br>PD<br>425 mW<br>~~ee~~<br>_<br>~~=~~|



The copper leadframe versions have the following suffix: 

Single: Si14xxEDH Dual: Si19xxEDH Complementary: Si15xxEDH 

Document Number:  71334 12-Dec-03 

www.vishay.com 

**2** 

**AN815** ~~a~~ **Vishay Siliconix** 

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400<br>320<br>A a<br>240<br>Alloy<br>L N  42<br>160<br>TN eo<br>Copper<br>80<br>Ce eel<br>0 UA AN A<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Time (Secs)<br>Thermal Resistance (C/W)<br>**----- End of picture text -----**<br>


**FIGURE  4.** Leadframe Comparison on EVB 

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250<br>200<br>UN a a a<br>150<br>UA Alloy<br> 42<br>100<br>TT<br>50<br>ee Copper<br>0 UA A a A<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Time (Secs)<br>Thermal Resistance (C/W)<br>**----- End of picture text -----**<br>


**FIGURE  5.** Leadframe Comparison on Alloy 42 1-inch[2] PCB 

Document Number:  71334 12-Dec-03 

www.vishay.com 

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**Application Note 826** 

Vishay Siliconix 

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## **RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead** 

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0.067<br>(1.702)<br>0.016 0.026 0.010<br>(0.406) (0.648) (0.241)<br>0.026 (0.648)<br>0.096 (2.438) 0.045 (1.143)<br>**----- End of picture text -----**<br>


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Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>**----- End of picture text -----**<br>


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Return to Index 

## 

www.vishay.com 18 

Document Number: 72602 Revision: 21-Jan-08 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.  Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

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