SI1070X-T1-GE3

**Si1070X** 

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Vishay Siliconix 

## **N-Channel 30 V (D-S) MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|---|
|**VDS (V)**|**RDS(on) (****)**|**ID (A)**|**Qg (Typ.)**|
|30|0.099 at VGS= 4.5 V|1.2a|3.5|
||0.140 at VGS= 2.5 V|1.0||



## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- TrenchFET[®] Power MOSFET 

- 100 % R and UIS Tested g 

- Compliant to RoHS Directive 2002/95/EC 

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## **APPLICATIONS** 

- Load Switch for Portable Devices 

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SC-89 (6-LEADS)<br>D  1  6  D<br>Marking Code<br>D  2  5  D<br> U  XX<br>Lot Traceability<br>G  3  4  S  and Date Code<br>Part # Code<br>Top View<br>Y<br>Y<br>**----- End of picture text -----**<br>


**Ordering Information:** Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free) 

|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Limit**|**Unit**|
|Drain-Source Voltage||VDS|30|V|
|Gate-Source Voltage||VGS|± 12||
|Continuous Drain Current (TJ= 150 °C)a|TA= 25 °C|ID|1.2b, c|A|
||TA= 70 °C||1b, c||
|Pulsed Drain Current||IDM|6||
|Avalanche Current|L = 0.1 mH|IAS|9||
|Repetitive Avalanche Energy||EAS|4.01|mJ|
|Continuous Source-Drain Diode Current|TA= 25 °C|IS|0.2b, c|A|
|Maximum Power Dissipationa|TA= 25 °C|PD|0.236b, c|W|
||TA= 70 °C||0.151b, c||
|Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150|°C|



|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|---|---|
|**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**|
|Maximum Junction-to-Ambientb, d|t5 s|RthJA|440|530|°C/W|
||Steady State||540|650||



Notes: 

a. Based on TC = 25 °C. 

b. Surface mounted on 1" x 1" FR4 board. 

c. t = 5 s. 

- d. Maximum under steady state conditions is 650 °C/W. 

Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 

www.vishay.com 

1 

**Si1070X** 

## Vishay Siliconix 

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|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static**|||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 µA|30|||V|
|VDSTemperature Coefficient|VDS/TJ|ID= 250 µA||24.5||mV/°C|
|VGS(th)Temperature Coefficient|VGS(th)/TJ|||- 3.81|||
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|0.7||1.55|V|
|Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 12 V|||± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 30 V, VGS= 0 V|||1|nA|
|||VDS= 30 V, VGS= 0 V, TJ= 85 °C|||10|µA|
|On-State Drain Currenta|ID(on)|VDS=5 V, VGS= 4.5 V|6|||A|
|Drain-Source On-State Resistancea|RDS(on)|VGS= 4.5 V, ID= 1.2 A||0.082|0.099||
|||VGS= 2.5 V, ID= 1.0 A||0.116|0.140||
|Forward Transconductance|gfs|VDS= 15 V, ID= 1.2 A||5||S|
|**Dynamicb**|||||||
|Input Capacitance|Ciss|VDS= 15 V, VGS= 0 V, f = 1 MHz||385||pF|
|Output Capacitance|Coss|||55|||
|Reverse Transfer Capacitance|Crss|||30|||
|Total Gate Charge|Qg|VDS= 15 V, VGS= 5 V, ID= 1.2 A||3.8|8.3|nC|
|||VDS= 15 V, VGS= 4.5 V, ID= 4.6 A||3.5|4.1||
|Gate-Source Charge|Qgs|||1.1|||
|Gate-Drain Charge|Qgd|||0.98|||
|Gate Resistance|Rg|f = 1 MHz||4.7|6.2||
|Turn-On Delay Time|td(on)|VDD= 15 V, RL= 15<br>ID 1.0 A, VGEN= 4.5 V, Rg= 1||10|15|ns|
|Rise Time|tr|||22|33||
|Turn-Off DelayTime|td(off)|||14|21||
|Fall Time|tf|||6|9||
|**Drain-Source Body Diode Characteristics**|||||||
|Pulse Diode Forward Currenta|ISM||||6|A|
|Body Diode Voltage|VSD|IS= 1.2 A||0.8|1.2|V|
|Body Diode Reverse Recovery Time|trr|IF= 3.8 A, dI/dt = 100 A/µs||19.4|29.5|nC|
|Body Diode Reverse Recovery Charge|Qrr|||18.43|27.5|ns|
|Reverse Recovery Fall Time|ta|||16.4|||
|Reverse Recovery Rise Time|tb|||3|||



Notes: 

a. Pulse test; pulse width  300 µs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

www.vishay.com 2 

Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 

**Si1070X** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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6<br>V GS  = 5 V thru 3 V<br>5<br>V GS  = 2.5 V<br>4<br>3<br>2<br>V GS  = 2 V<br>1<br>VGS = 1.5 V<br>0<br>0.0 0.6 1.2 1.8 2.4<br>VDS - Drain-to-Source Voltage (V)<br>             Output Characteristics<br>)A<br>( t<br>n<br>e<br>rr<br>u<br>C<br>niaDr<br>  -<br>I D<br>**----- End of picture text -----**<br>


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3.0<br>2.4<br>1.8<br>1.2<br>T C  = 125 °C<br>0.6<br>T   = C  25 °C<br>T   =C - 55 °C<br>0.0<br>0.0 0.6 1.2 1.8 2.4 3.0<br>VGS - Gate-to-Source Voltage (V)<br>)A<br>( t<br>n<br>e<br>rr<br>u<br>C<br>niaDr<br>  -<br>ID<br>**----- End of picture text -----**<br>


## **Transfer Characteristics Curves vs. Temp.** 

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0.30  500<br>0.25  C iss<br>400<br>0.20<br>300<br>0.15  V  GS   = 2.5 V<br>V GS  = 4.5 V  200<br>0.10<br>C oss<br>100<br>0.05<br>0.00  0  C rss<br>0 1 2 3 4 5 6 0 6 12 18 24 30<br>I D - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current Capacitance<br>5  1.8<br>4  I D = 1.2  A  1.6  I V D  GS   = 1.2  A  = 4.5 V<br>V DS  = 15 V  1.4<br>3<br>VGS = 24 V 1.2  V  GS  = 2.5 V<br>I D  = 1 A<br>2<br>1.0<br>1<br>0.8<br>0  0.6<br>0 1 2 3 4 5  - 50 - 25 0 25 50 75 100 125 150<br>Q g  - Total Gate Charge (nC) TJ - Junction Temperature (°C)<br>              Gate Charge  On-Resistance vs. Junction Temperature<br>)Ω<br>e (cna )( Fpe<br>c<br>tsis n<br>e a<br>ORn-  -)n Cticpaa<br>(o   -  C<br>S<br>D<br>R<br>)V<br>(<br>e<br>ga cen<br>tlo a<br>GSVt-tcrooeaeu- OtsisRen-  -S)(no )(ziladNerom<br>  - D<br>R<br>GS<br>V<br>**----- End of picture text -----**<br>


Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 

www.vishay.com 

3 

**Si1070X** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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10 0.24<br>I D  = 1.2  A<br>1 0.18<br>T A  = 125 °C<br>0.1 TJ = 150 °C 0.12<br>T J  = 25 °C<br>T A  = 25 °C<br>0.01 0.06<br>0.001  0.00<br>0  0.2 0.4 0.6 0.8 1  0 1 2 3 4 5<br>VSD - Source-to-Drain Voltage (V) VGS [ - Gate-to-Source Voltage (V)]<br> Source-Drain Diode Forward Voltage  RDS(on) vs. VGS vs. Temperature<br>)Ω<br>)A e (<br>( tne cna<br>rru tsis<br>C e<br>ecru ORn-<br>o   -<br>SI S  - S)(Dno<br>R<br>**----- End of picture text -----**<br>


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1.5  5.0<br>1.4<br>ID = 250 µA<br>4.0<br>1.2<br>3.0<br>1.0<br>2.0<br>0.8<br>1.0<br>0.6<br>0.0<br>- 50 - 25 0 25 50 75 100 125 150  0.01 0.1 1 10 100 1000<br>TJ - Temperature (°C) Time (s)<br> Threshold Voltage  Single Pulse Power<br>(V))t(h ) ( W  re o w<br>S P<br>G<br>V<br>**----- End of picture text -----**<br>


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 10<br>  Limited  by R DS(on)* 100 µs<br>1 ms<br>1<br>10 ms<br>100 ms<br>0.1<br>1 s<br>10 s<br>0.01<br>DC<br>BVDSS Limited<br>T  A   = 25 °C<br>Single Pulse<br>0.001<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS >  minimum VGS at which RDS(on) is specified<br> Safe Operating Area, Junction-to-Ambient<br>)(A<br>tn<br>e<br>rr<br>u<br>C<br>niaDr<br>-<br>I D<br>**----- End of picture text -----**<br>


www.vishay.com 4 

Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 

**Si1070X** 

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Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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1<br>Duty Cycle = 0.5<br>0.2<br>10  [-1 ]<br>0.1<br>0.05<br>Notes:<br>0.02<br>10  [-2 ]<br>P DM<br>t  1<br>10  [-3 ] 1. Duty Cycle, D 2. Per Unit Base = R  t 2  = thJA  t  t  1  2   = 540   °  C/W<br>Single Pulse  3. T  JM   - T A  = P DM Z thJA [(t)]<br>4. Surface Mounted<br>10  [-4 ]<br>10  [-4 ] 10  [-3 ] 10  [-2 ] 10  [-1 ] 1                           10                          100                      1000<br>Square Wave Pulse Duration (s)<br>  Normalized Thermal Transient Impedance, Junction-to-Ambient<br>t n<br>i T e s n a r  e c n a<br>i t ev  d e p<br>f f E dc e e  I   la m m r e<br>i l a z  h T<br>m r o<br>N<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73893._ 

Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 

www.vishay.com 

5 

**Package Information** Vishay Siliconix 

www.vishay.com 

## **SC-89 6-Leads (SOT-563F)** 

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||||||||
|---|---|---|---|---|---|---|
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|L1|2B|a|i|~-|
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|A1|SEE DETAIL “A”|
|i|
|2. Dimension D does not include mold flash, protrusions or gate|MILLIMETERS|
|DIM.|
|burrs. Mold flush, protrusions or gate burrs shall not exceed|MIN.|NOM.|MAX.|
|0.15 mm per dimension E1 does not include interlead flash|A|0.56|0.58|0.60|
|or protrusion, interlead flash or protrusion shall not exceed|
|A1|0|0.02|0.10|
|b|0.15|0.22|0.30|
|3. Dimensions D and E1 are determined at the outmost extremes|c|0.10|0.14|0.18|
|of the plastic body exclusive of mold flash, the bar burrs, gate|D|1.50|1.60|1.70|
|Sp|
|burrs and interlead flash, but including any mismatch between|
|E|1.50|1.60|1.70|
|the top and the bottom of the plastic body.|
|E1|———|1.15|1.20|1.25|
|4. Datums A, B and D to be determined 0.10 mm from the lead tip.|e|0.45|0.50|0.55|
|a|
|e1|0.95|1.00|1.05|
|—-——|
|5. Terminal numbers are shown for reference only.|
|L|0.25|0.35|0.50|
|6. These dimensions apply to the flat section of the lead between|——|L1|[>|0.10|0.20|0.30|
|0.08 mm and 0.15 mm from the lead tip.|C14-0439-Rev. C, 11-Aug-14|
|DWG: 5880|
|ee|

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## **Notes** 

1. Dimensions in millimeters. 

- | 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 

- . 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 

4. Datums A, B and D to be determined 0.10 mm from the lead tip. 

- A 5. Terminal numbers are shown for reference only. 

- A 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 

Revision: 11-Aug-14 

Document Number: 71612 

**1** 

For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead** 

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0.051<br>(1.300)<br>0.012 0.020<br>(0.300) (0.500)<br>0.051<br>(0.201)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.019 (0.478)<br>0.069 (1.753) 0.031 (0.798)<br>**----- End of picture text -----**<br>


Return to Index Return to Index 

Document Number: 72605 Revision: 21-Jan-08 

www.vishay.com 21 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.  Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

**1**