SI1032R-T1-GE3

**Si1032R** 

Vishay Siliconix 

www.vishay.com 

## **N-Channel 1.5 V (G-S) MOSFET** 

## **FEATURES** 

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SC-75A<br>(SOT-416)<br>G 1<br>3 D<br>S 2<br>**----- End of picture text -----**<br>


- TrenchFET[®] power MOSFETs: 1.5 V rated 

- Low-side switching 

- Low on-resistance: 5 W 

- Low threshold: 0.9 V (typ.) 

- Fast switching speed: 35 ns 

- Enhance power dissipation and lower RthJC 

- 2000 V ESD protection 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **BENEFITS** 

## **Marking Code:** G 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|
|VDS (V)|20|
|RDS(on)max.(Ω)at VGS= 4.5 V|5|
|RDS(on)max. (Ω) at VGS= 2.5 V|7|
|RDS(on)max. (Ω) at VGS= 1.8 V|9|
|RDS(on)max. (Ω) at VGS= 1.5 V|10|
|Qgtyp.(nC)|750|
|ID(A)|200|
|Configuration|Single|



- Ease in driving switches 

- Low offset (Error) voltage 

- Low-voltage operation 

- High-speed circuits 

- Low battery voltage operation 

## **APPLICATIONS** 

- **APPLICATIONS** D • Drivers: relays, solenoids, lamps, hammers, displays, memories 

- • Battery operated systems G 

- • Power supply converter circuits • Load/power switching cell phones, pagers S N-Channel MOSFET 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|
|Package|SC-75A|
|Lead(Pb)-free and halogen-free|Si1032R-T1-GE3|



## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|
|---|---|---|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**SI1032R**||**SI1032Xb**||**UNIT**|
||||**5 s**|**STEADY**<br>**STATE**|**5 s**|**STEADY**<br>**STATE**||
|Drain-source voltage||VDS|20||||V|
|Gate-source voltage||VGS|± 6|||||
|Continuous drain current (TJ= 150 °C)a|TA= 25 °C|ID|200|140|210|200|mA|
||TA= 85 °C||110|100|150|140||
|Pulsed drain currenta||IDM|500||600|||
|Continuous source current (diode conduction)a||IS|250|200|300|240||
|Maximum power dissipationafor SC-75|TA= 25 °C|PD|280|250|340|300|mW|
||TA= 85 °C||145|130|170|150||
|Operatingjunction and storage temperature range||TJ, Tstg|- 55 to 150||||°C|
|Gate-source ESD rating(HBM, method 3015)||ESD|2000||||V|



## **Note** 

a. Surface mounted on FR4 board 

b. Si1032X, product End of Life November - 2024 

S25-0320-Rev. G, 31-Mar-2025 

Document Number: 71172 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Si1032R** 

Vishay Siliconix 

www.vishay.com 

|**SPECIFICATIONS**(TA= 25 °C, unless|**SPECIFICATIONS**(TA= 25 °C, unless|otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Gate threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.40|0.7|1.2|V|
|Gate-body leakage|IGSS|VDS= 0 V, VGS= ± 2.8 V|-|± 0.5|± 1.0|μA|
|||VDS= 0 V, VGS= ± 4.5 V|-|± 1.0|± 3.0||
|Zero gate voltage drain current|IDSS|VDS= 20 V, VGS= 0 V|-|-|1||
|||VDS= 20 V, VGS= 0 V, TJ= 55 °C|-|-|10||
|On-state drain currenta|ID(on)|VDS= 5 V, VGS= 4.5 V|250|-|-|mA|
|Drain-source on-state resistancea|RDS(on)|VGS= 4.5 V, ID= 200 mA|-|-|5|Ω|
|||VGS= 2.5 V, ID= 175 mA|-|-|7||
|||VGS= 1.8 V, ID= 150 mA|-|-|9||
|||VGS= 1.5 V, ID= 40 mA|-|-|10||
|Forward transconductancea|gfs|VDS= 10 V, ID= 200 mA|-|0.5|-|S|
|Diode forward voltagea|VSD|IS= 150 mA, VGS= 0 V|-|-|1.2|V|
|**Dynamic**b|||||||
|Totalgate charge|Qg|VDS= 10 V, VGS= 4.5 V, ID= 250 mA|-|750|-|pC|
|Gate-source charge|Qgs||-|75|-||
|Gate-drain charge|Qgd||-|225|-||
|Turn-on delay time|td(on)|VDD= 10 V, RL= 47Ω<br>ID ≅200 mA, VGEN= 4.5 V, Rg= 10Ω|-|-|50|ns|
|Rise time|tr||-|-|25||
|Turn-off delay time|td(off)||-|-|50||
|Fall time|tf||-|-|25||



## **Notes** 

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % 

b. Guaranteed by design, not subject to production testing 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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0.5<br>VGS = 5 V thru 1.8 V<br>0.4<br>0.3<br>0.2<br>0.1<br>1 V<br>0.0<br>0 1 2 3 4 5 6<br>VDS - Drain-to-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Output Characteristics** 

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600<br>TJ = - 55 °C<br>500<br>25 °C<br>400<br>125 °C<br>300<br>200<br>100<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VGS - Gate-to-Source Voltage (V)<br> Transfer Characteristics<br> - Drain Current (mA)<br>ID<br>**----- End of picture text -----**<br>


S25-0320-Rev. G, 31-Mar-2025 

Document Number: 71172 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Si1032R** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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50<br>40<br>30<br>20<br>VGS = 1.8 V<br>10<br>VGS = 2.5 V<br>VGS = 4.5 V<br>0<br>0 50 100 150 200 250<br>ID - Drain Current (mA)<br>On-Resistance vs. Drain Current<br>5<br>VDS = 10 V<br>ID = 150 mA<br>4<br>3<br>2<br>1<br>0<br>0.0 0.2 0.4 0.6 0.8<br>Q   - Total Gate Charge (nC)g<br>)Ω<br> - On-Resistance (<br>DS(on)<br>R<br>  - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Gate Charge** 

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1000<br>TJ = 125  ° C<br>100<br>TJ = 25 °C<br>TJ = 50 °C<br>10<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Sourcet-o-Drnia Vtloage( V)<br>-  Source Current (mA)<br>IS<br>**----- End of picture text -----**<br>


**Surge-Drain Diode Forward Voltage** 

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100<br>VGS = 0 V<br>f = 1 MHz<br>80<br>Ciss<br>60<br>40<br>Coss<br>20<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>1.60<br>1.40<br>VGS = 4.5 V<br>ID = 200 mA<br>1.20<br>VGS = 1.8 V<br>ID = 175 mA<br>1.00<br>0.80<br>0.60<br>- 50 - 25 0 25 50 75 100 125<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Gate-to-Source Voltage<br>50<br>40<br>ID =  200 mA<br>30<br>20<br>ID =  175 mA<br>10<br>0<br>0 1 2 3 4 5 6<br>VGS - Gate-to-Source Voltage (V)<br>- Capacitance (pF)<br>C<br> - On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>)Ω<br>-  On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

Document Number: 71172 

S25-0320-Rev. G, 31-Mar-2025 

**3** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Si1032R** 

Vishay Siliconix 

www.vishay.com 

## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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0.3 3.0<br>0.2 2.5<br>ID = 0.25 mA<br>0.1 2.0<br>0.0 1.5<br>- 0.1 1.0<br>VGS = 2.8 V<br>- 0.2 0.5<br>- 0.3 0.0<br>- 50 - 25 0 25 50 75 100 125 - 50 - 25 0 25 50 75 100 125<br>TJ - Temperature (°C) TJ - Temperature (°C)<br> - (µA)<br>Variance (V)<br>IGSS<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


**Threshold Voltage Variance vs. Temperature** 

**IGSS vs. Temperature** 

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7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>- 50 - 25 0 25 50 75 100 125<br>TJ - Temperature (°C)<br>BVGSS vs. Temperature<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = RthJA = 500 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [- 4] 10 [- 3] 10 [- 2] 10 [- 1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br> - Gate-to-Source Breakdown Voltage (V)<br>GSS<br>BV<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


**Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71172._ 

S25-0320-Rev. G, 31-Mar-2025 

Document Number: 71172 

**4** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **SC-75A: 3 Leads** 

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L2<br>1 2<br>D<br>e2 2X D 3<br>3 B1(b1)<br>e1<br>3 E/2<br>1<br>2 E1 E<br>1 1<br>1 2<br>C<br>2X<br>bbb C<br>3 4 e3 2X<br>2XB1 B1<br>ddd M C A – B D b1<br>With Tin Planting<br>c1<br>Base Metal<br>Section B-B 5<br>C<br>4X<br>Seating Plane<br>D<br>D<br>A<br>L<br>L1<br>D<br>B B<br>D<br>B<br>C<br>A2 A<br>D<br>bbb D<br>bbb<br>bbb<br>**----- End of picture text -----**<br>


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A1<br>**----- End of picture text -----**<br>


## DWG: 5868 

## **Notes** 

Dimensions in millimeters will govern. 

- 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 

- 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 

- 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 

- 4.Terminal positions are shown for reference only. 

- 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 

|**DIMENSIONS**|**TOLERANCES**|
|---|---|
|aaa|0.10|
|bbb|0.10|
|ccc|0.10|
|ddd|0.10|



|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**NOTE**|
|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**||
|A|-|-|0.80||
|A1|0.00|-|0.10||
|A2|0.65|0.70|0.80||
|B1|0.19|-|0.24|5|
|b1|0.17|-|0.21||
|c|0.13|-|0.15|5|
|c1|0.10|-|0.12|5|
|D|1.48|1.575|1.68|1, 2|
|E|1.50|1.60|1.70||
|E1|0.66|0.76|0.86|1, 2|
|e1|0.50 BSC||||
|e2|1.00 BSC||||
|e3|0.50 BSC||||
|L|0.15|0.205|0.30||
|L1|0.40 ref.||||
|L2|0.15 BSC||||
|q|0°|-|8°||
|q1|4°|-|10°||



C15-1445-Rev. F, 23-Nov-15 

Document Number: 71348 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead** 

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0.014<br>(0.356)<br>0.264<br>(0.660)<br>0.054<br>(1.372)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.071 (1.803) 0.031 (0.798)<br>0.020 (0.503)<br>**----- End of picture text -----**<br>


Return to Index 

Return to Index 

Document Number: 72603 Revision: 21-Jan-08 

www.vishay.com 19 

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## **Disclaimer** 

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Document Number: 91000 

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Revision: 01-Jan-2025 

**1** 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000