SI1031R-T1-GE3

**Si1031R/X** 

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## Vishay Siliconix 

## **P-Channel 20 V (D-S) MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|**VDS (V)**|**RDS(on) (****)**|**ID (mA)**|
|- 20|8 at VGS= - 4.5 V|- 150|
||12 at VGS= - 2.5 V|- 125|
||15 at VGS= - 1.8 V|- 100|
||20 at VGS= - 1.5 V|- 30|



## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- High-Side Switching 

- Low On-Resistance: 8  

- Low Threshold: 0.9 V (typ.) 

- Fast Switching Speed: 45 ns 

- TrenchFET[®] Power MOSFETs: 1.5 V Rated 

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- ESD Protected: 2000 V 

- Compliant to RoHS Directive 2002/95/EC 

## **APPLICATIONS** 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories 

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SC-75A or SC-89<br>G 1<br>SC-75A (SOT-416): Si1031R<br>SC-89 (SOT-490): Si1031X<br>3 D<br>S 2 Marking Code: H<br>Top View<br>**----- End of picture text -----**<br>


**Ordering Information:** Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) 

- Battery Operated Systems 

- Power Supply Converter Circuits 

- Load/Power Switching Cell Phones, Pagers 

## **BENEFITS** 

- Ease in Driving Switches 

- Low Offset (Error) Voltage 

- Low-Voltage Operation 

- High-Speed Circuits 

- Low Battery Voltage Operation 

|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C, unless otherwise noted)||
|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**|**Si1031R**||**Si1031X**||**Unit**|
||||**5 s**|**Steady State**|**5 s**|**Steady State**||
|Drain-Source Voltage||VDS|- 20||||V|
|Gate-Source Voltage||VGS|± 6|||||
|Continuous Drain Current (TJ= 150 °C)a|TA= 25 °C|ID|- 150|- 140|- 165|- 155|mA|
||TA= 85 °C||- 110|- 100|- 150|- 125||
|Pulsed Drain Currenta||IDM|- 500||- 600|||
|Continuous Source Current (Diode Conduction)a||IS|- 250|- 200|- 340|- 240||
|Maximum Power Dissipationa|TA= 25 °C|PD|280|250|340|300|mW|
||TA= 85 °C||145|130|170|150||
|Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150||||°C|
|Gate-Source ESD Rating(HBM, Method 3015)||ESD|2000||||V|



Notes: 

a. Surface mounted on FR4 board. 

Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 

www.vishay.com 

1 

**Si1031R/X** 

## Vishay Siliconix 

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|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TA= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.a**|**Max.**|**Unit**|
|**Static**|||||||
|Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 µA|- 0.40||- 1.2|V|
|Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 2.8 V||± 0.5|± 1.0|µA|
|||VDS= 0 V, VGS= ± 4.5 V||± 1.0|± 2.0||
|Zero Gate Voltage Drain Current|IDSS|VDS= - 16 V, VGS= 0 V||- 1|- 500|nA|
|||VDS= - 16 V, VGS= 0 V, TJ= 85 °C|||- 10|µA|
|On-State Drain Currenta|ID(on)|VDS= - 5 V, VGS= - 4.5 V|- 200|||mA|
|Drain-Source On-State Resistancea|RDS(on)|VGS= - 4.5 V, ID= - 150 mA|||8||
|||VGS= - 2.5 V, ID= - 125 mA|||12||
|||VGS= - 1.8 V, ID= - 100 mA|||15||
|||VGS= - 1.5 V, ID= - 30 mA|||20||
|Forward Transconductancea|gfs|VDS= - 10 V, ID= 150 mA||0.4||S|
|Diode Forward Voltagea|VSD|IS= - 150 mA, VGS= 0 V|||- 1.2|V|
|**Dynamicb**|||||||
|Total Gate Charge|Qg|VDS= - 10 V, VGS= - 4.5 V, ID= - 150 mA||1500||pC|
|Gate-Source Charge|Qgs|||150|||
|Gate-Drain Charge|Qgd|||450|||
|Turn-On Delay Time|td(on)|VDD= - 10 V, RL= 65<br>ID - 150 mA, VGEN= - 4.5 V, Rg= 10|||55|ns|
|Rise Time|tr||||30||
|Turn-Off Delay Time|td(off)||||60||
|Fall Time|tf||||30||



Notes: 

a. Pulse test; pulse width  300 µs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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0.5 500<br>2 V<br>VGS = 5 V thru 2.5 V TJ = - 55 °C<br>0.4 400 25  ° C<br>125 °C<br>1.8 V<br>0.3 300<br>0.2 200<br>0.1 100<br>0.0 0<br>0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS  - Drain-to-Source Voltage (V) VGS  - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>- Drain Current (A) - Drain Current (mA)<br>ID ID<br>**----- End of picture text -----**<br>


www.vishay.com 2 

Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 

**Si1031R/X** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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25<br>VGS = 1.8 V<br>20<br>VGS = 2.5 V<br>15<br>10<br>VGS = 4.5 V<br>5<br>0<br>0 200 400 600 800 1000<br>ID  - Drain Current (mA)<br>On-Resistance vs. Drain Current<br>5<br>VDS = 10 V<br>ID = 150 mA<br>4<br>3<br>2<br>1<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>1000<br>T J  = 125 °C<br>100<br>TJ = 25  ° C<br>TJ = - 55 °C<br>10<br>1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD  - Sourcet-o-Drnia Vtloage( V)<br>Surge-Drain Diode Forward Voltage<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br> - Source Current (mA)<br>IS<br>**----- End of picture text -----**<br>


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120<br>VGS = 0 V<br>f = 1 MHz<br>100<br>80 C iss<br>60<br>40<br>Coss<br>20<br>Crss<br>0<br>0 4 8 12 16 20<br>VDS  - Drain-to-Source Voltage (V)<br>Capacitance<br>1.6<br>1.4<br>VGS = 4.5 V<br>ID = 150 mA<br>1.2<br>1.0 VGS = 1.8 V<br>ID = 125 mA<br>0.8<br>0.6<br>- 50 - 25 0 25 50 75 100 125<br>TJ - Junction Temperature (°C)<br>On-Resistance vs. Junction Temperature<br>50<br>40<br>ID =  150 mA<br>30<br>20<br>10<br>ID =  125 mA<br>0<br>0 1 2 3 4 5 6<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>C - Capacitance (pF)<br>- On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 

www.vishay.com 

3 

**Si1031R/X** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (TA = 25 °C, unless otherwise noted) 

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0.3 3.0<br>0.2 2.5<br>ID = 0.25 mA<br>0.1 2.0<br>VGS = 2.8 V<br>0.0 1.5<br>- 0.1 1.0<br>- 0.2 0.5<br>- 0.3 0.0<br>- 50 - 25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125<br>TJ - Temperature (° C) TJ - Temperature (° C)<br>Threshold Voltage Variance vs. Temperature IGSS vs. Temperature<br>Variance (V)  - (µA)<br>IGSS<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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0<br>-1<br>-2<br>-3<br>-4<br>-5<br>-6<br>-7<br>-50 -25 0 25 50 75 100 125<br>TJ - Temperature (°C)<br>BVGSS vs. Temperature<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = RthJA = 500 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only)<br> - Gate-to-Source Breakdown Voltage (V)<br>GSS<br>BV<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71171._ 

www.vishay.com 4 

Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 

**Package Information** 

Vishay Siliconix 

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www.vishay.com 

## **SC-75A: 3 Leads** 

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L2<br>1 2<br>D<br>e2 2X D 3<br>3 B1(b1)<br>e1<br>3 E/2<br>1<br>2 E1 E<br>1 1<br>1 2<br>C<br>2X<br>bbb C<br>3 4 e3 2X<br>2XB1 B1<br>ddd M C A – B D b1<br>With Tin Planting<br>c1<br>Base Metal<br>Section B-B 5<br>C<br>4X<br>Seating Plane<br>D<br>D<br>A<br>L<br>L1<br>D<br>B B<br>D<br>B<br>C<br>A2 A<br>D<br>bbb D<br>bbb<br>bbb<br>**----- End of picture text -----**<br>


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A1<br>**----- End of picture text -----**<br>


## DWG: 5868 

## **Notes** 

Dimensions in millimeters will govern. 

1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 

2. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but including any mismatch between the top and bottom of the plastic body. 

3. Datums A, B and D to be determined 0.10 mm from the lead tip. 

4. Terminal positions are shown for reference only. 

5. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 

|**DIMENSIONS**|**TOLERANCES**|
|---|---|
|aaa|0.10|
|bbb|0.10|
|ccc|0.10|
|ddd|0.10|



|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**NOTE**|
|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**||
|A|-|-|0.80||
|A1|0.00|-|0.10||
|A2|0.65|0.70|0.80||
|B1|0.19|-|0.24|5|
|b1|0.17|-|0.21||
|c|0.13|-|0.15|5|
|c1|0.10|-|0.12|5|
|D|1.48|1.575|1.68|1, 2|
|E|1.50|1.60|1.70||
|E1|0.66|0.76|0.86|1, 2|
|e1|0.50 BSC||||
|e2|1.00 BSC||||
|e3|0.50 BSC||||
|L|0.15|0.205|0.30||
|L1|0.40 ref.||||
|L2|0.15 BSC||||
|θ|0°|-|8°||
|θ1|4°|-|10°||



C14-0222-Rev. E, 07-Apr-14 

Document Number: 71348 

**1** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

www.vishay.com 

Vishay Siliconix 

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## **For Samsung only** 

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b c<br>3<br>1 2<br>0.150 gauge line<br>e<br>Side view<br>Top view<br>E E1<br>L<br>**----- End of picture text -----**<br>


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D<br>A<br>A1<br>**----- End of picture text -----**<br>


## **Notes** 

- (1) Millimeters will govern. 

- (2) Dimension exclusive of mold gate burrs. 

- (3) Dimension exclusive of mold flash and cutting burrs. 

|**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**|
|A|0.60|0.70|0.80|0.024|0.028|0.031|
|A1|0.00|0.05|0.10|0.000|0.002|0.004|
|b|0.18|0.22|0.32|0.007|0.009|0.013|
|c|0.11|0.13|0.21|0.004|0.005|0.008|
|D|1.48|1.58|1.68|0.058|0.062|0.066|
|E|1.50|1.60|1.70|0.059|0.063|0.067|
|E1|0.66|0.76|0.86|0.026|0.030|0.034|
|e|0.95|1.00|1.05|0.037|0.039|0.041|
|L|0.22|0.32|0.42|0.009|0.013|0.017|
|θ|4°|7°|10°|4°|7°|10°|



C14-0222-Rev. E, 07-Apr-14 

Document Number: 71348 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead** 

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0.014<br>(0.356)<br>0.264<br>(0.660)<br>0.054<br>(1.372)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.071 (1.803) 0.031 (0.798)<br>0.020 (0.503)<br>**----- End of picture text -----**<br>


Return to Index 

Return to Index 

Document Number: 72603 Revision: 21-Jan-08 

www.vishay.com 19 

**Legal Disclaimer Notice** Vishay 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

**1**