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SI1029X-T1-GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 305 mA, 305 mA, 1.4 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:305mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SC-89
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 250mW
- Power Dissipation P Channel: 250mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 305mA
- Continuous Drain Current Id P Channel: 305mA
- Drain Source On State Resistance N Channel: 1.4ohm
- Drain Source On State Resistance P Channel: 1.4ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.188 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 14, 2026