Illustrative purposes only
SI1029X-T1-GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 305 mA, 1.4 ohm, SC-89, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 250mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 1.4ohm
- Transistor Case Style: SC-89
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 305mA
- Power Dissipation N Channel: 250mW
- Power Dissipation P Channel: 250mW
- Gate Source Threshold Voltage Max: 2.5V
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 305mA
- Continuous Drain Current Id P Channel: 305mA
- Drain Source On State Resistance N Channel: 1.4ohm
- Drain Source On State Resistance P Channel: 1.4ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.238 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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