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SI1025X-T1-GE3
Dual MOSFET, P Channel, 60 V, 60 V, 190 mA, 190 mA, 4 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):4ohm; Rds(on) Tes; Available until stocks are exhausted
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SC-89
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 250mW
- Power Dissipation P Channel: 250mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 190mA
- Continuous Drain Current Id P Channel: 190mA
- Drain Source On State Resistance N Channel: 4ohm
- Drain Source On State Resistance P Channel: 4ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.147 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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Updated at April 27, 2026