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SI1016CX-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 600 mA, 600 mA, 0.33 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-563
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 220mW
- Power Dissipation P Channel: 220mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 600mA
- Continuous Drain Current Id P Channel: 600mA
- Drain Source On State Resistance N Channel: 0.33ohm
- Drain Source On State Resistance P Channel: 0.33ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.131 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 23, 2026