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SH8K11GZETB
Dual MOSFET, N Channel, 30 V, 3.5 A, 0.07 ohm, SOP, Surface Mount
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- Manufacturer: ROHM
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 2W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.07ohm
- Transistor Case Style: SOP
- Drain Source Voltage Vds: 30V
- Continuous Drain Current Id: 3.5A
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Gate Source Threshold Voltage Max: 2.5V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: 3.5A
- Drain Source On State Resistance N Channel: 0.07ohm
- Drain Source On State Resistance P Channel: 0.07ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.203 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Data Sheet « ## 4V Drive Nch + Nch MOSFET ## **SH8K11** ## **Structure** Silicon N-channel MOSFET ## **Features** 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). ## **Dimensions** (Unit : mm) **==> picture [111 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> SOP8<br>5.0<br>o d 1.75<br>(8) (5)<br>(1) Doig (4) o<br>[+ [<br>**----- End of picture text -----**<br> ## **Application** Switching ## **Packaging specifications** |Type|Package|Taping| |---|---|---| ||Code|TB| ||Basic orderingunit(pieces)|2500| |SH8K11||○| ## **Absolute maximum ratings** (Ta = 25C) |**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)C)|(Ta = 25C)Ta = 25C)C)C))||| |---|---|---|---|---| |Parameter||Symbol<br>~~—_——~~|Limits<br>~~—_——~~|Unit| |Drain-source voltage||VDSS<br>~~—_——~~<br>~~a~~|30<br>~~—_——~~<br>~~a~~|V| |Gate-source voltage||VGSS<br>~~—_——~~<br>~~a~~<br>~~ee~~<br>~~ee~~|20<br>~~—_——~~<br>~~a~~<br>~~ee~~|V<br>~~ee~~| |Drain current|Continuous<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|3.5<br>~~ee~~<br>~~ee~~|A<br>~~ee~~| ||Pulsed<br>~~ee~~|IDP<br>*1<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|14<br>~~ee~~|A| |Source current<br>(Body Diode)|Continuous<br>~~ee~~|Is<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es|~~|1.6<br>~~ee~~<br>~~|~~|A| ||Pulsed<br>~~ee~~|Isp<br>*1<br>~~es~~<br>~~ee~~<br>~~es|~~|14<br>~~ee~~<br>~~|~~|A| |Power dissipation||PD<br>*2<br>~~es|~~<br>~~|~~<br>~~ee~~|2.0<br>~~|~~<br>~~|~~<br>~~ee~~|W / TOTAL| ||||1.4<br>~~|~~<br>~~|~~<br>~~ee~~|W / ELEMENT| |Channel temperature||Tch<br>~~|~~<br>~~ee~~<br>~~ee~~|150<br>~~|~~<br>~~ee~~<br>~~ee~~|C<br>~~ee~~| |Range of storage temperature||Tstg<br>~~|~~<br>~~ee ~~<br>~~ee~~|55 to150<br>~~|~~<br> ~~ee~~<br>~~ee~~|C<br>~~ee~~| ## **Inner circuit** **==> picture [150 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> (8) (7) (6) (5)<br>(1) Tr1 Source ∗ 2 ∗ 2<br>(2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate ∗ 1 ∗ 1<br>(5) Tr2 Drain<br>(6) Tr2 Drain (1) (2) (3) (4)<br>(7) Tr1 Drain<br>(8) Tr1 Drain ∗1 ESD PROTECTION DIODE<br>∗2 BODY DIODE<br>**----- End of picture text -----**<br> *1 Pw10s, Duty cycle1% - *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 1/6 Data Sheet **SH8K11** ## **Electrical characteristics** (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Gate-source leakage|IGSS|-|-|10|A|VGS=20V, VDS=0V| |Drain-source breakdown voltage|V(BR)DSS|30|-|-|V|ID=1mA, VGS=0V| |Zerogate voltage drain current|IDSS|-|-|1|A|VDS=30V, VGS=0V| |Gate threshold voltage|VGS(th)|1.0|-|2.5|V|VDS=10V, ID=1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>*|-|70|98|m|ID=3.5A, VGS=10V| |||-|90|126||ID=3.5A, VGS=4.5V| |||-|100|140||ID=3.5A, VGS=4.0V| |Forward transfer admittance|l Yfsl<br>*|1.5|-|-|S|ID=3.5A, VDS=10V| |Input capacitance|Ciss|-|85|-|pF|VDS=10V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|-|40|-|pF|| |Reverse transfer capacitance|Crss|-|20|-|pF|| |Turn-on delaytime|td(on)<br>*****|-|4|-|ns|ID=1.7A, VDD 15V<br>VGS=10V<br>RL=8.8<br>RG=10| |Rise time|tr<br>*****|-|8|-|ns|| |Turn-off delaytime|td(off)<br>*****|-|18|-|ns|| |Fall time|tf<br>*****|-|3|-|ns|| |Totalgate charge|Qg<br>*****|-|1.9|-|nC|ID=3.5A, VDD 15V<br>VGS=5V| |Gate-source charge|Qgs<br>*****|-|0.8|-|nC|| |Gate-drain charge|Qgd<br>*****|-|0.4|-|nC|| *Pulsed ## **Body diode characteristics** (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward Voltage|VSD<br>*|-|-|1.2|V|Is=3.5A, VGS=0V| *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 2/6 Data Sheet **SH8K11** ## **Electrical characteristic curves** (Ta=25C) **==> picture [417 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ)<br>3.5 3.5<br>Ta=25°C<br>3 Pulsed 3 VGS= 2.8V Ta=25°C<br>2.5 VVVGSGSGS= 10V = 4.5V = 4.0V 2.5 VVVGSGSGS= 10V = 4.5V = 4.0V Pulsed<br>2 2<br>1.5 VGS= 2.8V 1.5 VGS= 2.5V<br>1 1<br>0.5 VGS= 2.5V 0.5<br>0 0<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.4 Static Drain-Source On-State<br>Fig.3 Typical Transfer Characteristics Resistance vs. Drain Current(Ⅰ)<br>10 1000<br>VDS= 10V Ta=25°C<br>Pulsed<br>Pulsed<br>VGS= 4.0V<br>1 Ta=125°C VGS= 4.5V<br>Ta=75°C VGS= 10V<br>Ta=25°C<br>Ta=-25°C<br>0.1 100<br>.<br>0.01<br>0.001 10<br>0 1 2 3 0.1 1 10<br>GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A]<br>Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State<br> Resistance vs. Drain Current(Ⅱ) Resistance vs. Drain Current(Ⅲ)<br>1000 1000<br>VPulsed GS= 10V VPulsed GS= 4.5V Ta=125°C<br>Ta=125°C Ta=75°C<br>Ta=75°C Ta=25°C<br>Ta=25°C Ta=-25°C<br>Ta=-25°C<br>100 100<br>10 10<br>0.1 1 10 0.1 1 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>DRAIN CURRENT : I[A] D DRAIN CURRENT : I[A] D<br>]<br>Ω<br>[A] D<br>(on)[m<br>DS<br>DRAIN CURRENT : I RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>(on)[m] Ω (on)[m] Ω<br>DS DS<br>RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 3/6 Data Sheet **SH8K11** **==> picture [416 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance<br> Resistance vs. Drain Current(Ⅳ) vs. Drain Current<br>1000 10<br>VPulsed GS= 4.0V Ta=125Ta=75°C°C VPulsed DS= 10V Pulsed DS= 10V DS= 10V = 10V<br>Ta=25°C<br>Ta=-25°C<br>100 1<br>Ta=125°C°CC<br>Ta=75°C°CC<br>Ta=25°C °C C<br>Ta=-25°C-25°C25°C°CC<br>10 0.1<br>0.1 1 10 0.01 0.1 1 10<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] D[A] [A]<br>Fig.9 Reverse Drain Current Fig.10 Static Drain-Source On-State<br> vs. Sourse-Drain Voltage Resistance vs. Gate Source Voltage<br>10 200<br>VGS=0V Ta=25°C °C C<br>Pulsed Pulsed<br>150 ID= 1.75A D= 1.75A = 1.75A<br>1<br>ID= 3.5A D= 3.5A = 3.5A<br>100<br>Ta=125°C<br>Ta=75°C<br>0.1 Ta=25°C<br>Ta=-25°C 50<br>0.01 0<br>0 0.5 1 1.5 0 2 4 6 8<br>SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V] GS[V] [V]<br>Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics<br>1000 10<br>Ta=25°C<br>td(off) VDD= 15V<br>VGS=10V 8<br>tf RPulsed G=10Ω<br>100<br>6<br>4<br>10 td(on)<br>Ta=25°C<br>2<br>VDD= 15V<br>ID= 3.5A<br>tr Pulsed<br>1 0<br>0.01 0.1 1 10 0 1 2 3 4 5<br>DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC]<br>]<br>Ω<br>(on)[m<br>DS<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>]<br>Ω<br>(ON)[m<br>DS<br>SOURCE CURRENT : Is [A] RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br> [V]<br>SWITCHING TIME : t [ns] GS<br>GATE-SOURCE VOLTAGE : V<br>**----- End of picture text -----**<br> **==> picture [174 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.8 Forward Transfer Admittance<br> vs. Drain Current<br>10<br>VPulsed DS= 10V Pulsed DS= 10V DS= 10V = 10V<br>1<br>Ta=125°C°CC<br>Ta=75°C°CC<br>Ta=25°C °C C<br>Ta=-25°C-25°C25°C°CC<br>0.1<br>0.01 0.1 1 10<br>DRAIN-CURRENT : ID[A] D[A] [A]<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>**----- End of picture text -----**<br> **==> picture [181 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.10 Static Drain-Source On-State<br> Resistance vs. Gate Source Voltage<br>200<br>Ta=25°C °C C<br>Pulsed<br>150 ID= 1.75A D= 1.75A = 1.75A<br>ID= 3.5A D= 3.5A = 3.5A<br>100<br>50<br>0<br>0 2 4 6 8 10<br>GATE-SOURCE VOLTAGE : VGS[V] GS[V] [V]<br>]<br>Ω<br>(ON)[m<br>DS<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 4/6 Data Sheet **SH8K11** ## Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera **==> picture [433 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>Operation in this area is limited by RDS(ON)<br>Coss (VGS=10V)<br>Ciss<br>10<br>100<br>PW=100us<br>1<br>Crss PW=1ms<br>10<br>PW = 10ms<br>Ta=25°C 0.1 Ta=25°C<br>f=1MHz Single Pulse DC operation<br>Mounted on a ceramic board.<br>VGS=0V (30mm × 30mm × 0.8mm)<br>1 0.01<br>0.01 0.1 1 10 100 0.1 1 10 100<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width<br>10<br>Ta=25°C<br>Single Pulse<br>1<br>0.1<br>0.01 Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>Rth(ch-a)=89.3°C/W<br>Rth(ch-a)(t)=r(t)×Rth(ch-a)<br>0.001<br>0.0001 0.01 1 100<br>PULSE WIDTH : Pw(s)<br>CAPACITANCE : C [pF] (A) DRAIN CURRENT : ID<br>RESISTANCE : r (t)<br>NORMARIZED TRANSIENT THERMAL<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 5/6 Data Sheet **SH8K11** ## **Measurement circuits** **==> picture [304 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms<br>VG<br>VGS ID<br>VDS<br>Qg<br>RL<br>VGS<br>IG(Const.) D.U.T.<br>Qgs Qgd<br>VDD<br>Charge<br>Fig.2-2 Gate Charge Waveform<br>**----- End of picture text -----**<br> Fig.1-1 Switching Time Measurement Circuit Fig.2-1 Gate Charge Measurement Circuit ## **Notice** This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.02 - Rev.A** 6/6 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at February 9, 2023
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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