SH8J62TB1

## 4V Drive Pch+Pch MOSFET 

## **SH8J62** 

##  **Structure** 

Silicon P-channel MOSFET 

##  **Dimensions** (Unit : mm) 

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SOP8<br>**----- End of picture text -----**<br>


##  **Features** 

1) Low On-resistance. 

2) Built-in G-S Protection Diode. 

3) Small Surface Mount Package (SOP8). 

 **Application** Switching 

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Each lead has same dimensions<br>**----- End of picture text -----**<br>


##  **Packaging specifications** 

||Package|Taping|
|---|---|---|
|Type|Code|TB|
||Basic ordering unit (pieces)|2500|
|SH8J62||||



##  **Inner circuit** 

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(8) (7) (6) (5)<br>∗ 2 ∗ 2<br>(1) Tr1 Source<br>∗ 1 ∗ 1 (2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate<br>(5) Tr2 Drain<br>(1) (2) (3) (4)<br>(6) Tr2 Drain<br>∗ 1 ESD PROTECTION DIODE (7) Tr1 Drain<br>∗ 2 BODY DIODE (8) Tr1 Drain<br>**----- End of picture text -----**<br>


##  **Absolute maximum ratings** (Ta=25C) 

<It is the same ratings for the Tr1 and Tr2.> 

|Parameter|Parameter|Symbol<br>TSCU|TCC~Ci‘CSXC|Limits<br>TSCU|TCC~Ci‘CSXC|Unit|
|---|---|---|---|---|
|Drain-source voltage||VDSS<br>~~a~~|−30<br>~~a~~|V|
|Gate-source voltage||VGSS<br>ee<br>ee|±20<br>ee<br>ee|V<br>ee|
|Drain current|Continuous<br>ee|ID<br>ee<br>ee<br>ee|±4.5<br>ee<br>ee<br>ee|A<br>ee<br>ee|
||Pulsed<br>ee|∗1<br>IDP<br>ee<br>ee<br>ee<br>ee|±18<br>ee<br>ee<br>ee<br>ee|A<br>ee<br>ee|
|Source current<br>(Body diode)|Continuous<br>ee|IS<br>ee<br>ee<br>ee|−1.6<br>ee<br>ee<br>ee|A<br>ee|
||Pulsed<br>ee|∗1<br>ISP<br>ee<br>ee|−18<br>ee<br>ee|A|
|Total power dissipation||∗2<br>PD<br>—<br>||2.0<br>—|W / TOTAL|
||||1.4<br>—<br>||W / ELEMENT<br>||
|Channel temperature||Tch<br>a|150<br>a|°C|
|Range of Storage temperature||Tstg<br>ee|−55 to+150<br>ee|°C|



- ∗ 1 Pw ≤ 10 μ s, Duty cycle ≤ 1% 

- ∗ 2 Mounted on a ceramic board 

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**2010.01 - Rev.A** 

1/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

**SH8J62** 

Data Sheet 

##  **Electrical characteristics** (Ta=25C) 

<It is the same characteristics for the Tr1 and Tr2.> 

|Parameter|Symbol|Symbol|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|||−|−|±10|μA|VGS=±20V, VDS=0V|
|Drain-source breakdown voltage|V(BR) DSS|||−30|−|−|V|ID= −1mA, VGS=0V|
|Zero gate voltage drain current|IDSS|||−|−|−1|μA|VDS= −30V, VGS=0V|
|Gate threshold voltage|VGS (th)|||−1.0|−|−2.5|V|VDS= −10V, ID= −1mA|
|Static drain-source on-state<br>resistance|RDS (on)<br>∗|||−|40|56|mΩ|ID= −4.5A, VGS= −10V|
|||||−|55|77|mΩ|ID= −2.5A, VGS= −4.5V|
|||||−|60|84|mΩ|ID= −2.5A, VGS= −4.0V|
|Forward transfer admittance||Yfs|∗|3.5|−|−|S|VDS= −10V, ID= −4.5A|
|Input capacitance|Ciss|||−|800|−|pF|VDS= −10V<br>VGS=0V<br>f=1MHz|
|Output capacitance|Coss|||−|120|−|pF||
|Reverse transfer capacitance|Crss|||−|110|−|pF||
|Turn-on delay time|td (on)<br>∗|||−|7|−|ns|VDD−15V<br>ID= −2.5A<br>VGS= −10V<br>RL=6.0Ω<br>RG=10Ω|
|Rise time|tr<br>∗|||−|15|−|ns||
|Turn-off delay time|td (off)<br>∗|||−|70|−|ns||
|Fall time|tf<br>∗|||−|50|−|ns||
|Total gate charge|Qg<br>∗|||−|8.0|−|nC|VDD  −15V<br>VGS= −5V<br>RL=3.3Ω /RG=10Ω<br>ID= −4.5A|
|Gate-source charge|Qgs<br>∗|||−|2.5|−|nC||
|Gate-drain charge|Qgd<br>∗|||−|3.0|−|nC||
|∗Pulsed|||||||||



##  **Body diode characteristics** (Source-Drain) (Ta=25C) 

## <It is the same characteristics for the Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Forward voltage|VSD<br>∗|−|−|−1.2|V|IS= −4.5A, VGS=0V|



∗ Pulsed 

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**2010.01 - Rev.A** 

2/5 

○c 2010 ROHM Co., Ltd. All rights reserved. 

**SH8J62** 

Data Sheet 

##  **Electrical characteristic curves** 

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20 20 10<br>Ta=25°C 18 Ta=25°C VDS= -10V<br>Pulsed 16 VGS= -10V Pulsed Pulsed<br>1510 VV V GSGSGS = -10V = -4.5V= -4.0V 141210 VVV GS GSGS== -4.0V= -3.8V-4.5V 1 Ta= - 25 Ta= 125°C Ta= 75Ta= 25°C ° °CC<br>8<br>5 V GS = -3.5V 6 VGS= -3.2V 0.1<br>4<br>VGS= -3.0V 2<br>0 0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 1.0 1.5 2.0 2.5 3.0<br>DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V]<br>Fig.1 Typical output characteristics( Ⅰ ) Fig.2 Typical output characteristics( Ⅱ ) Fig.3  Typical Transfer Characteristics<br>[A]D DRAIN CURRENT : -I[A]D DRAIN CURRENT : -I[A]D<br>DRAIN CURRENT : -I<br>**----- End of picture text -----**<br>


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1000 1000 1000<br>Ta=25°CPulsed V GS = -4.0V VPulsedGS= -10V Ta=125Ta=75°C ° C VPulsedGS= -4.5V Ta=125°C Ta=75°C<br>VV GS GS= -4.5V= -10V Ta=25°C Ta= -25°C Ta=25°CTa= -25 ° C<br>100 100 100<br>10 10 10<br>0.1 1 10 0.1 1 10 0.1 1 10<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]<br>Fig.4  Static Drain-Source On-State Fig.5  Static Drain-Source On-State Fig.6  Static Drain-Source On-State<br>                 Resistance vs. Drain Current( Ⅰ )                  Resistance vs. Drain Current( Ⅱ )                  Resistance vs. Drain Current( Ⅲ )<br>1000 10 10<br>PulsedVGS= -4.0V Ta=125°C V Pulsed DS= -10V VPulsedGS=0V<br>Ta=75°C<br>Ta=25°C<br>1<br>Ta= -25°C<br>100 1<br>Ta= -25°C Ta=125°C<br>Ta=25°C 0.1 Ta=75°C<br>Ta=75°C Ta=25°C<br>Ta=125°C Ta=-25°C<br>10 0.1 0.01<br>0.1 1 10 0.01 0.1 1 10 0.0 0.5 1.0 1.5<br>DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] SOURCE-DRAIN VOLTAGE : -VSD [V]<br>Fig.7  Static Drain-Source On-State Fig.8  Forward Transfer Admittance Fig.9  Reverse Drain Current<br>          Resistance vs. Drain Current( Ⅳ )            vs. Drain Current           vs. Sourse-Drain Voltage<br>Ω ][m Ω ][m ][m Ω<br>DS(on) DS(on) DS(on)<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>Ω ]<br>[m<br>DS(on)<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>REVERSE DRAIN CURRENT : -Is [A]<br>FORWARD TRANSFER ADMITTANCE : |Yfs| [S]<br>**----- End of picture text -----**<br>


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○c 2010 ROHM Co., Ltd. All rights reserved. 

**SH8J62** 

Data Sheet 

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200 10000 10<br>Ta=25°C Ta=25°C<br>150 ID= -4.5A Pulsed 1000 td(off) VVDDGS=-= -15V10V 8<br>ID= -2.5A tf RG=10 Ω<br>Pulsed 6<br>100 100<br>Ta=25°C<br>4<br>50 10 t r t d(on) IVDDD= -4.5A= -15V<br>2 R G =10 Ω<br>Pulsed<br>0 1 0<br>0 5 10 15 0.01 0.1 1 10 0 5 10 15<br>GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] TOTAL GATE CHARGE : Qg  [nC]<br>Fig.10  Static Drain-Source On-State Fig.11  Switching Characteristics Fig.12  Dynamic Input Characteristics<br>             Resistance vs. Gate Source Voltage<br>10000 1000<br>Ta=25°C Operation in this area is limited by RDS(on)<br>f=1MHz (VGS=-10V)<br>VGS=0V Ciss 100 PW = 1ms PW=100us<br>1000<br>10<br>1 PW=10ms<br>100 DC operation<br>Coss 0.1 Ta = 25°C<br>Crss Single Pulse<br>MOUNTED ON CERAMIC BOARD<br>10 0.01<br>0.01 0.1 1 10 100 0.1 1 10 100<br>DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V]<br>Fig.13  Typical Capacitance Fig.14  Maximum Safe Operating Area<br>             vs. Drain-Source Voltage<br>10<br>1<br>0.1<br>  Ta = 25°C<br>  Single Pulse : 1Unit<br>0.01   Rth(ch-a)(t) = r(t)×Rth(ch-a)<br>  Rth(ch-a) = 89.3 °C/W<br>    <Mounted on a CERAMIC board><br>0.001<br>0.001 0.01 0.1 1 10 100 1000<br>PULSE WIDTH : Pw(s)<br>Fig.15  Normalized Transient Thermal Resistance vs. Pulse Width<br> [V]<br>GS<br>Ω ]<br>[m<br>DS(on)<br>Switching Time : t [ns]<br>RESISTANCE : R<br>GATE-SOURCE VOLTAGE : -V<br>STATIC DRAIN-SOURCE ON-STATE<br>  (A)D<br>CAPACITANCE : C [pF]<br>DRAIN CURRENT : -I<br>RESISTANCE : r (t)<br>NORMARIZED TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


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**2010.01 - Rev.A** 

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○c 2010 ROHM Co., Ltd. All rights reserved. 

**SH8J62** 

Data Sheet 

##  **Measurement circuits** 

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VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG<br>VDD<br>**----- End of picture text -----**<br>


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Pulse Width<br>VGS 10%<br>50% 90% 50%<br>10% 10%<br>90% 90%<br>VDS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


Fig.1-1  Switching Time Test Circuit 

> [Fig.1-2  Switching Time Waveforms] 

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VGS ID<br>VDS<br>RL<br>IG(Const.)<br>D.U.T.<br>RG<br>VDD<br>**----- End of picture text -----**<br>


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VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>**----- End of picture text -----**<br>


Fig.2-1  Gate Charge Test Circuit 

Fig.2-2  Gate Charge Waveform 

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**2010.01 - Rev.A** 

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Notice 

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