Image not available
Illustrative purposes only
SGP07N120XKSA1
IGBT, 16.5 A, 3.1 V, 125 W, 1.2 kV, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 150°C
- Continuous Collector Current: 16.5A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 3.1V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.87 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
SGP07N120 ## Cinfin eon ## Fast IGBT in NPT-technology - lower _E_ off compared to previous generation - Short circuit withstand time – 10 µs - Designed for: - Motor controls - Inverter - SMPS - NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G © E PG-TO-220-3-1 - Qualified according to JEDEC[1] for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ |• Complete product spectrum and PSpice Models :Complete product spectrum and PSpice Models :<br>~~—~~|• Complete product spectrum and PSpice Models :Complete product spectrum and PSpice Models :|• Complete product spectrum and PSpice Models :Complete product spectrum and PSpice Models :|• Complete product spectrum and PSpice Models :Complete product spectrum and PSpice Models :|• Complete product spectrum and PSpice Models :Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/|http://www.infineon.com/igbt/|http://www.infineon.com/igbt/| |---|---|---|---|---|---|---| |**Type**<br>~~—~~|**_V_CE**|**_I_C**|**_E_off**|**_T_j**|**Marking**|**Package**| |SGP07N120<br>~~—~~|1200V|8A|0.7mJ|150°C|GP07N120|PG-TO-220-3-1| ## **Maximum Ratings** |**Maximum Ratingsgss **|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Collector-emitter voltage|_V_C E<br>~~[~~|1200|V| |DC collector current<br>_T_C= 25°C<br>_T_C= 100°C|_I_C<br>~~[~~|16.5<br>7.9|A| |Pulsed collector current,_t_plimited by_T_jmax|_I_Cp ul s<br>~~[~~|27|| |Turn off safe operating area<br>_V_CE≤1200V,_T_j ≤150°C|_-_<br>~~_—_f~~|27<br>~~_—_f~~|| |Gate-emitter voltage|_V_G E<br>~~_—_f~~|±20<br>~~_—_f~~|V| |Avalanche energy, single pulse<br>_I_C= 8A,_V_CC= 50V,_R_GE= 25Ω, start at_T_j= 25°C|_E_A S<br>~~Pf~~|40<br>~~Pf~~|mJ| |Short circuit withstand time2<br>_V_GE= 15V, 100V≤ _V_CC≤1200V,_T_j ≤150°C<br>~~/—_f~~|_t_SC<br>~~Pf~~<br>~~/—_f~~|10<br>~~Pf~~<br>~~/—_f _~~|µs| |Power dissipation<br>_T_C= 25°C<br>~~/—_f~~|_P_t ot<br>~~/—_f~~|125<br>~~/—_f _~~|W| |Operating junction and storage temperature<br>~~/—_f~~|_T_j,_T_stg<br>~~/—_f~~|-55...+150<br>~~/—_f _~~|°C| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s<br>~~/—_f~~|-<br>~~/—_f~~|260<br>~~/—_f _~~|| > 1 J-STD-020 and JESD-022 > 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.3 Sep 07 1 Power Semiconductors ## SGP07N120 ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t hJC||1|K/W| |Thermal resistance,<br>junction – ambient|_R_t hJA|PG-TO-220-3-1|62|| ## **Electrical Characteristic,** at _T_ j = 25 °C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25°|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=500µA|1200|-|-|V| |Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=8A<br>_T_j=25°C<br>_T_j=150°C|2.5<br>-|3.1<br>3.7|3.6<br>4.3|| |Gate-emitter threshold voltage|_V_G E( t h)|_I_C=350µA,_V_C E=_V_GE|3|4|5|| |Zero gate voltage collector current|_I_CE S|_V_CE=1200V,VGE=0V<br>_T_j=25°C<br>_T_j=150°C|-<br>-|-<br>-|100<br>400|µA| |Gate-emitter leakage current|_I_GE S|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_C E=20V,_I_C=8A||6|-|S| |**Dynamic Characteristic**||||||| |Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|720|870|pF| |Output capacitance|_C_os s||-|60|75|| |Reverse transfer capacitance|_C_rs s||-|40|50|| |Gate charge|_Q_Gat e|_V_C C=960V,_I_C=8A<br>_V_G E=15V|-|70|90|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|7|-|nH| |Short circuit collector current2)|_I_C( SC )|_V_G E=15V,_t_SC≤10µs<br>100V≤_V_C C≤1200V,<br>_T_j ≤150°C|-|75|-|A| > 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.3 Sep 07 2 Power Semiconductors ## SGP07N120 ## **Switching Characteristic, Inductive Load,** at _T_ j=25 °C |**Parameter**|**Symbol**|**Conditions**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25°C,<br>_V_C C=800V,_I_C=8A,<br>_V_G E=15V/0V,<br>_R_G=47Ω,<br>Lσ<br>1 )=180nH,<br>Cσ<br>1)=40pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|27|35|ns| |Rise time|_t_r||-|29|38|| |Turn-off delay time|_t_d( of f)||-|440|570|| |Fall time|_t_f||-|21|27|| |Turn-on energy|_E_o n||-|0.6|0.8|mJ| |Turn-off energy|_E_o ff||-|0.4|0.55|| |Total switching energy|_E_t s||-|1.0|1.35|| ## **Switching Characteristic, Inductive Load,** at _T_ j=150 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delay time|_t_d( o n)|_T_j=150°C<br>_V_C C=800V,<br>_I_C=8A,<br>_V_G E=15V/0V,<br>_R_G=47Ω,<br>Lσ<br>1 )=180nH,<br>Cσ<br>1)=40pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|30|36|ns| |Rise time|_t_r||-|26|31|| |Turn-off delay time|_t_d( of f)||-|490|590|| |Fall time|_t_f||-|30|36|| |Turn-on energy|_E_o n||-|1.0|1.2|mJ| |Turn-off energy|_E_o ff||-|0.7|0.9|| |Total switching energy|_E_t s||-|1.7|2.1|| > 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Rev. 2.3 Sep 07 3 Power Semiconductors SGP07N120 **==> picture [226 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 35A<br>Ic<br>30A<br>25A<br>20A T C=80°C<br>15A<br>T C=110°C<br>10A<br>5A Ic<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>f , SWITCHING FREQUENCY<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 1. Collector current as a function of switching frequency** ( _T_ j ≤ 150°C, _D =_ 0.5, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47Ω) **==> picture [226 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 150W<br>125W<br>100W<br>75W<br>50W<br>25W<br>0W<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 150°C) **==> picture [227 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> t p=5µs<br>15µs<br>10A<br>50µs<br>200µs<br>1A<br>1ms<br>0.1A DC<br>1V 10V 100V 1000V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25°C, _T_ j ≤ 150°C) **==> picture [228 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> 20A<br>15A<br>10A<br>5A<br>0A<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 4. Collector current as a function of case temperature** ( _V_ GE ≤ 15V, _T_ j ≤ 150°C) Rev. 2.3 Sep 07 4 Power Semiconductors ## SGP07N120 **==> picture [229 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> 25A<br>20A<br>V =17V<br>GE<br>15V<br>15A<br>13V<br>11V<br> 9V<br>10A 7V<br>5A<br>0A<br>0V 1V 2V 3V 4V 5V 6V 7V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 5. Typical output characteristics** ( _T_ j = 25°C) **==> picture [231 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 25A<br>20A<br>15A<br>T J=+150°C<br>T J=+25°C<br>10A T J=-40°C<br>5A<br>0A<br>3V 5V 7V 9V 11V<br>V GE, GATE-EMITTER VOLTAGE<br>Figure 7. Typical transfer characteristics<br>( V CE = 20V)<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [233 x 548] intentionally omitted <==** **----- Start of picture text -----**<br> 25A<br>20A<br>V =17V<br>GE<br>15V<br>15A 13V<br>11V<br> 9V<br> 7V<br>10A<br>5A<br>0A<br>0V 1V 2V 3V 4V 5V 6V 7V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 6. Typical output characteristics<br>( T j = 150°C)<br>6V<br>IC=16A<br>5V<br>4V IC=8A<br>3V IC=4A<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>EMITTER SATURATION VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) Rev. 2.3 Sep 07 5 Power Semiconductors ## SGP07N120 **==> picture [223 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>t f<br>100ns<br>t<br>d(on)<br>t r<br>10ns<br>0A 5A 10A 15A 20A<br>I C, COLLECTOR CURRENT<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47Ω, dynamic test circuit in Fig.E ) **==> picture [223 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t t r<br>d(on)<br>t f<br>10ns<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, _R_ G = 47Ω, dynamic test circuit in Fig.E ) **==> picture [224 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> 000ns<br>t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0Ω 20Ω 40Ω 60Ω 80Ω 100Ω<br>R G, GATE RESISTOR<br>SWITCHING TIMES<br>t ,<br>**----- End of picture text -----**<br> **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, dynamic test circuit in Fig.E ) **==> picture [228 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> 6V<br>5V<br>4V max.<br>3V typ.<br>min.<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>EMITTER THRESHOLD VOLTAGE<br>-<br>GATE<br>,<br>GE(th)<br>V<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.3mA) Rev. 2.3 Sep 07 6 Power Semiconductors SGP07N120 **==> picture [223 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 5mJ *) E on and E ts include losses E ts*<br>due to diode recovery.<br>4mJ<br>E *<br>on<br>3mJ<br>E<br>2mJ off<br>1mJ<br>0mJ<br>0A 5A 10A 15A 20A<br>I C, COLLECTOR CURRENT<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **Figure 13. Typical switching energy losses** **as a function of collector current** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _R_ G = 47Ω, dynamic test circuit in Fig.E ) **==> picture [223 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0mJ<br>*) E on and E ts include losses *<br>E<br>due to diode recovery. ts<br>1.5mJ<br>E on*<br>1.0mJ<br>E<br>off<br>0.5mJ<br>0.0mJ<br>-50°C 0°C 50°C 100°C 150°C<br>T j, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, _R_ G = 47Ω, dynamic test circuit in Fig.E ) **==> picture [224 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5mJ<br>*) E on and E ts include losses E *<br>due to diode recovery. ts<br>2.0mJ<br>1.5mJ<br>E *<br>on<br>1.0mJ E off<br>0.5mJ<br>0.0mJ<br>0Ω 20Ω 40Ω 60Ω 80Ω 100Ω<br>R G, GATE RESISTOR<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ j = 150°C, _V_ CE = 800V, _V_ GE = +15V/0V, _I_ C = 8A, dynamic test circuit in Fig.E ) **==> picture [232 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 100K/W<br>D =0.5<br>0.2<br>0.1<br>10-1K/W<br>0.05<br>R , ( K / W ) τ , ( s )<br>0.1020 0.77957<br>0.02<br>0.40493 0.21098<br>0.26391 0.01247<br>10-2K/W 0.01 0.22904 0.00092<br>R 1 R 2<br>single pulse C 1=τ1/ R 1 C 2=τ2/ R 2<br>10-3K/W<br>1µs 10µs 100µs 1ms 10ms 100ms 1s<br>t p, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 16. IGBT transient thermal impedance as a function of pulse width** ( _D_ = _t_ p / _T_ ) Rev. 2.3 Sep 07 7 Power Semiconductors ## SGP07N120 **==> picture [223 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 20V<br>15V<br>10V UCE=960V<br>5V<br>0V<br>0nC 20nC 40nC 60nC 80nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** ( _I_ C = 8A) **==> picture [226 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 30µs<br>25µs<br>20µs<br>15µs<br>10µs<br>5µs<br>0µs<br>10V 11V 12V 13V 14V 15V<br>V GE, GATE-EMITTER VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>,<br>t sc<br>**----- End of picture text -----**<br> **Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE = 1200V, start at _T_ j = 25°C) **==> picture [228 x 534] intentionally omitted <==** **----- Start of picture text -----**<br> 1nF<br>C iss<br>100pF<br>C oss<br>C rss<br>0V 10V 20V 30V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 18. Typical capacitance as a<br>function of collector-emitter voltage<br>( V GE = 0V, f = 1MHz)<br>150A<br>100A<br>50A<br>0A<br>10V 12V 14V 16V 18V 20V<br>V GE, GATE-EMITTER VOLTAGE<br>CAPACITANCE<br>,<br>C<br>SHORT CIRCUIT COLLECTOR CURRENT<br>,<br>I C(sc)<br>**----- End of picture text -----**<br> **Figure 20. Typical short circuit collector current as a function of gate-emitter voltage** (100V ≤ _V_ CE ≤ 1200V, _T_ C = 25°C, _T_ j ≤ 150°C) Rev. 2.3 Sep 07 8 Power Semiconductors ## SGP07N120 **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PG-TO220-3-1<br>**----- End of picture text -----**<br> Rev. 2.3 Sep 07 9 Power Semiconductors ## SGP07N120 **==> picture [285 x 284] intentionally omitted <==** **Figure A. Definition of switching times** **==> picture [286 x 285] intentionally omitted <==** **Figure B. Definition of switching losses** **==> picture [189 x 327] intentionally omitted <==** **----- Start of picture text -----**<br> i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I t t<br>F S F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>τ1 τ2 τn<br>r1 r 2 r n<br>Tj (t)<br>p(t) r1 r 2 r n<br>TC<br>**----- End of picture text -----**<br> **Figure D. Thermal equivalent circuit** **==> picture [170 x 194] intentionally omitted <==** **Figure E. Dynamic test circuit** Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. Rev. 2.3 Sep 07 10 Power Semiconductors ## SGP07N120 ## **Edition 2006-01** ## **Published by Infineon Technologies AG 81726 München, Germany** ## **© Infineon Technologies AG 9/12/07. All Rights Reserved.** ## **Attention please!** The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Sep 07 11 Power Semiconductors
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →