SGL50N60RUFDTU

## **Is Now Part of** 

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## **SGL50N60RUFD** 

## **600 V, 50 A Short Circuit Rated  IGBT** 

## **General Description** 

Fairchild’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. 

## **Features** 

- 50 A, 600 V, TC = 100°C 

- Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A 

- Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C 

- High Speed Switching 

- High Input Impedance 

- Short Circuit Rating 

## **Applications** 

Motor Control, UPS, General Inverter. 

cs **C** 7 ~~|~~ **G TO-264 E** G C E **Absolute Maximum Ratings** TC = 25C unless otherwise notedC = 25C unless otherwise noted = 25C unless otherwise notedC unless otherwise notedC unless otherwise noted **Symbol** ~~a~~ **Description Ratings Unit** VCES ~~Cf~~ Collector-Emitter Voltage 600 V VGES ~~|~~ Gate-Emitter Voltage  20 V IC ~~|eeal~~ Collector CurrentCollector Current @ T@ TCC =   25 = 100CC 8050 AA ICM (1) ~~Tn~~ Pulsed Collector Current 150 A IF ~~|Pfa~~ Diode Continuous Forward CurrentDiode Continuous Forward Current @ T@ TCC = 25 = 100CC ~~a~~ 6030 ~~|~~ AA ITFMSC ~~OOPf~~ Diode Maximum Forward CurrentShort Circuit Withstand Time @ TC = 100C ~~a~~ 9010 usA PD ~~Pf~~ Maximum Power Dissipation @ TC =  25C 250 W ~~a~~ Maximum Power Dissipation @ TC = 100C 100 W TJ ~~es~~ Operating Junction Temperature -55 to +150 C Tstg ~~a~~ Storage Temperature Range -55 to +150 C TL Maximum Lead Temp. for SolderingPurposes, 1/8” from Case for 5 Seconds 300 C 

**Absolute Maximum Ratings** TC = 25C unless otherwise notedC = 25C unless otherwise noted = 25C unless otherwise notedC unless otherwise notedC unless otherwise noted 

## **Notes :** 

(1) Repetitive rating : Pulse width limited by max. junction temperature 

## **Thermal Characteristics** 

|**Thermal Characteristics**|||
|---|---|---|
|**Parameter**|**Typ.**|**Max.**|
|Thermal Resistance,Junction-to-Case|--|0.5|
|Thermal Resistance,Junction-to-Case|--|1.0|
|Thermal Resistance,Junction-to-Ambient|--|25|



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©1999 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. C1 

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## **Electrical Characteristics of the IGBT** TC = 25C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>**Off Characteristics**<br>BVCES<br>Collector-Emitter Breakdown Voltage<br>VGE= 0 V,IC= 250 uA<br>600<br>--<br>--<br>V<br>BVCES/<br>TJ<br>Temperature Coefficient of Breakdown<br>Voltage<br>VGE= 0 V, IC= 1 mA<br>--<br>0.6<br>--<br>V/C<br>ICES<br>Collector Cut-Off Current<br>VCE= VCES,VGE= 0 V<br>--<br>--<br>250<br>uA<br>IGES<br>G-E Leakage Current<br>VGE= VGES,VCE= 0 V<br>--<br>--<br>± 100<br>nA<br>**On Characteristics**<br>VGE(th)<br>G-E Threshold Voltage<br>Ic = 50 mA,VCE= VGE<br>5.0<br>6.0<br>8.5<br>V<br>VCE(sat)<br>Collector to Emitter<br>Saturation Voltage<br>IC= 50 A,VGE= 15 V<br>--<br>2.2<br>2.8<br>V<br>IC= 80 A,VGE= 15 V<br>--<br>2.5<br>--<br>V<br>**Dynamic Characteristics**<br>Cies<br>Input Capacitance<br>VCE=30 V,VGE= 0 V,<br>f = 1 MHz<br>--<br>3311<br>--<br>pF<br>Coes<br>Output Capacitance<br>--<br>399<br>--<br>pF<br>Cres<br>Reverse Transfer Capacitance<br>--<br>139<br>--<br>pF<br>**Switching Characteristics**<br>td(on)<br>Turn-On DelayTime<br>VCC= 300 V, IC= 50 A,<br>RG= 5.9, VGE= 15 V,<br>Inductive Load, TC= 25C<br>--<br>26<br>--<br>ns<br>tr<br>Rise Time<br>--<br>89<br>--<br>ns<br>td(off)<br>Turn-Off DelayTime<br>--<br>66<br>100<br>ns<br>tf<br>Fall Time<br>--<br>118<br>200<br>ns<br>Eon<br>Turn-On SwitchingLoss<br>--<br>1.68<br>--<br>mJ<br>Eoff<br>Turn-Off SwitchingLoss<br>--<br>1.03<br>--<br>mJ<br>Ets<br>Total SwitchingLoss<br>--<br>2.71<br>3.8<br>mJ<br>td(on)<br>Turn-On DelayTime<br>VCC= 300 V, IC= 50 A,<br>RG= 5.9, VGE= 15 V,<br>Inductive Load, TC= 125C<br>--<br>28<br>--<br>ns<br>tr<br>Rise Time<br>--<br>91<br>--<br>ns<br>td(off)<br>Turn-Off DelayTime<br>--<br>68<br>110<br>ns<br>tf<br>Fall Time<br>--<br>261<br>400<br>ns<br>Eon<br>Turn-On SwitchingLoss<br>--<br>1.7<br>--<br>mJ<br>Eoff<br>Turn-Off SwitchingLoss<br>--<br>2.31<br>--<br>mJ<br>Ets<br>Total SwitchingLoss<br>--<br>4.01<br>5.62<br>mJ<br>Tsc<br>Short Circuit Withstand Time<br>VCC= 300 V, VGE= 15 V<br>@TC= 100C<br>10<br>--<br>--<br>us<br>Qg<br>Total Gate Charge<br>VCE= 300 V, IC= 50 A,<br>VGE= 15 V<br>--<br>145<br>210<br>nC<br>Qge<br>Gate-Emitter Charge<br>--<br>25<br>35<br>nC<br>Qgc<br>Gate-Collector Charge<br>--<br>70<br>100<br>nC<br>Le<br>Internal Emitter Inductance<br>Measured 5mm from PKG<br>--<br>18<br>--<br>nH<br>~~ee~~<br>~~,=r~~<br>~~——~~<br>~~=:~~<br>~~===~~<br>~~——~~<br>~~=~~|
|---|
|**Electrical Characteristics of DIODE **TC= 25C unless otherwise noted|
|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**|
|VFM<br>Diode Forward Voltage<br>IF= 30 A<br>TC=   25C<br>--<br>1.9<br>2.8<br>V<br>TC= 100C<br>--<br>1.8<br>--|
|trr<br>Diode Reverse Recovery Time<br>TC=   25C<br>--<br>70<br>100<br>ns<br>TC= 100C<br>--<br>140<br>--|
|IF= 30 A,<br>diF/dt = 200 A/us<br>Irr<br>Diode Peak Reverse Recovery<br>Current<br>TC=   25C<br>--<br>6<br>7.8<br>A<br>TC= 100C<br>--<br>8<br>--|
|Qrr<br>Diode Reverse Recovery Charge<br>TC=   25C<br>--<br>200<br>360<br>nC<br>TC= 100C<br>--<br>580<br>--|



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140<br>140 Common EmitterTC = 25℃ 20V 15V 120 Common EmitterVGE = 15V<br>120 T C  =   25℃ ━━<br>12V 100 TC = 125℃ ------<br>100<br>80<br>80<br>60<br>60 VGE = 10V<br>40 40<br>20 20<br>0 0<br>0 2 4 6 8 1 10<br>Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V]<br>Fig 1. Typical Output Characteristics  Fig 2. Typical Saturation Voltage Characteristics<br>5 60<br>Common Emitter VCC = 300V<br>V GE  = 15V Load Current : peak of square wave<br>50<br>4<br>100A<br>40<br>3<br>50A 30<br>2 I C  = 30A<br>20<br>1<br>10 Duty cycle : 50%<br>TC = 100℃<br>Power Dissipation = 70W<br>0 0<br>-50 0 50 100 150 1 10 100 1000<br>Case Temperature, TC [℃] Frequency [KHz]<br>Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency<br>     Temperature at Variant Current Level<br>20 20<br>Common Emitter Common Emitter<br>T C  = 25℃ T C  = 125 ℃<br>16 16<br>12 12<br>8 8<br>100A<br>100A<br>4 50A 4 50A<br>IC = 30A I C  = 30A<br>0 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V]<br>Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE<br>Collector Current, I  [A]C Collector Current, I  [A]C<br> [V]<br>CE<br>Load Current [A]<br>Collector - Emitter Voltage, V<br> [V]  [V]<br>CE CE<br>Collector - Emitter Voltage, V   Collector - Emitter Voltage, V<br>**----- End of picture text -----**<br>


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7000 1000<br>Common Emitter Common Emitter<br>6000 V T CGE  = 25  = 0V, f = 1MHz ℃ V ICCC = 50A  = 300V, V GE  = ± 15V<br>T C  =   25℃ ━━<br>5000 TC = 125℃ ------ Ton<br>Cies<br>4000<br>Tr<br>3000<br>Coes<br>2000<br>100<br>Cres<br>1000<br>0<br>1 10 10 100<br>Collector - Emitter Voltage, VCE [V] Gate Resistance, RG []<br>Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.<br>          Gate Resistance<br>10000<br>Common Emitter Common Emitter<br>1000 T V T IC CC CC = 50A  =   25=  = 300V, V  125℃℃ ------ ━━GE = ± 15V Toff VTT ICC C CC = 50A  =   25 = 125 = 300V, V℃℃ ------━━ GE  = ± 15V Eon<br>Toff<br>Eoff<br>Tf<br>Eoff<br>Tf 1000<br>100<br>10 100 10 100<br>Gate Resistance, RG [] Gate Resistance, RG []<br>Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance<br>           Gate Resistance<br>1000 1000<br>Common Emitter<br>V GE  = ± 15V, R G  = 5.9<br>TC =   25℃ ━━<br>TC = 125℃ ------ Ton<br>Toff<br>Tr Tf<br>100<br>Toff<br>100<br>Tf<br>Common Emitter<br>V GE  = ± 15V, R G  = 5.9<br>T C  =   25℃ ━━<br>10 TC = 125℃ ------<br>10 20 40 60 80 100 10 20 40 60 80 100<br>Collector Current, IC [A] Collector Current, IC [A]<br>Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.<br>            Collector Current             Collector Current<br>Capacitance [pF]<br>Switching Time  [ns]<br>Switching Time [ns] Switching Loss [uJ]<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br>


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10000 15<br>Common Emitter Common Emitter<br>VGE = ± 15V, RG = 5.9 R L  = 6<br>a TT CC  =   25 = 125℃℃ ------━━ Eoff 12 eee TC = 25℃ VCC = 100 V Ae  300 V<br>Eon Eoff<br>9  200 V<br>= hy FE<br>1000<br>6 fRPT TT<br>100 C 30 PppAP<br>10 20 40 60 80 100 0 30 60 90 120 150 180<br>Collector Current, IC [A] Gate Charge,  Qg [ nC ]<br>Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics<br>500<br>IC  MAX. (Pulsed)<br>100 50us 100<br>IC MAX. (Cont i nuous) 100us<br> 1㎳<br>10 =en DC Operation<br>10<br>1 NY Single Nonrepetitive Pulse TC = 25℃<br>Curves must be derated<br>linearly with increase<br>Safe Operating Area<br>0.1 SS in temperature 1 VGE = 20V, TC = 100℃<br>0.3 1 10 100 1000 1 10 100 1000<br>Collector-Emitter  Voltage, VCE [V] Collector-Emitter  Voltage, VCE [V]<br> [ V ]<br>Switching Loss [uJ] Gate - Emitter Voltage,  VGE<br>Collector Current, I  [A]C Collector Current, I  [A]C<br>**----- End of picture text -----**<br>


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Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics<br>1<br>0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>unis 0.02  ee Pdm<br>0.01 0.01 t1<br>t2<br>single pulse Duty factor D = t1 / t2<br>1E-3 a4 ET Peak Tj = Pdm  Zthjc + TC<br>10-5 10-4 10-3 10-2 10-1 100 101<br>Rectangular Pulse Duration [sec]<br>Fig 17. Transient Thermal Impedance of IGBT<br>/W]<br>℃<br>Thermal Response, Zthjc [<br>**----- End of picture text -----**<br>


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100 es TTCC =   25 = 100℃℃ ------━━ 100 VI TF  = 30ACR = 200V =   25℃ ━━<br>T C  = 100℃ ------<br>10<br>10<br>1 fill) 1 Fo<br>0 1 2 3 4 100 1000<br>Forward Voltage Drop, VFM [V] di/dt [A/us]<br>Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current<br>1400 200<br>1200 V I F  = 30AR  = 200V 180 VI F  = 30A R  = 200V<br>1000 TTCC =   25 = 100℃℃ ------━━ 160 TT CC  =   25 = 100 ℃ ℃ ------━━<br>140<br>800 120<br>600 100<br>80<br>400 eee<br>60<br>200<br>40<br>0 pa 20 ee<br>100 1000 100 1000<br>di/dt [A/us] di/dt [A/us]<br>Fig 20. Stored Charge Fig 21. Reverse Recovery Time<br>Forward Current, I  [A]F  [A]rr<br>Reverse Recovery Current, I<br> [nC]rr<br> [ns]rr<br>Stored Recovery Charge, Q   Reverce Recovery Time, t<br>**----- End of picture text -----**<br>


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©1999 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. C1 

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## **Mechanical Dimensions** 

## **Figure 22.  TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003_ 

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## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

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|AX-CAP|[®]|*|FRFET|[®]|®|®*|
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## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

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|Datasheet Identification|Product Status|Definition|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications|
|may change in any manner without notice.|
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