SEP4512HM3/P

**SEP4512** 

Vishay General Semiconductor 

www.vishay.com 

## **Phase Leg High Voltage Standard Rectifier** 

## **FEATURES** 

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- Oxide planar chip junction 

- Low forward conduction 

- High surge current capability 

- High avalanche capability 

- High junction temperature capability 

- Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 

- AEC-Q101 qualified available: 

- Automotive ordering code: base P/NHM3 

RoHS Available 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|2 x 45 A|
|VRRM|1200 V|
|IFSM|480 A|
|VFat IF= 45 A (TJ= 125 °C)|1.14|
|EAS|20 mJ|
|TJmax.|175 °C|
|Package|TO-247AD 3L|
|Circuit configuration|Phase leg|



OBC for EV/HEV, single or three phase bridge rectification, industrial inverter power 

## **MECHANICAL DATA** 

## **Case:** TO-247AD 3L 

Molding compound meets UL 94 V-0 flammability rating 

Base P/N-M3 - halogen-free, RoHS-compliant 

Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

**Polarity:** as marked 

**Mounting torque:** 10 in-lbs maximum 

## **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) 

|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**SEP4512**|**UNIT**|
|Maximum repetitive peak reverse voltage|VRRM|1200|V|
|Maximum average forward rectified current, per device|IF(AV) (1)|45|A|
|Peak forward surge current 10 ms single half sine-wave|IFSM|480|A|
|Typical Non-repetitive Avalanche energy at IAS= 1 A, TJ= 25 °C|EAS|20|mJ|
|Operatingjunction and storage temperature range|TJ, TSTG (2)|-55 to +175|°C|



## **Notes** 

- (1) With heatsink 

> (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA 

Revision: 13-Jul-2023 

Document Number: 98365 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SEP4512** 

Vishay General Semiconductor 

www.vishay.com 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Instantaneous forward voltage per diode|IF= 22.5 A|TJ= 25 °C|VF (1)|1.05|-|V|
||IF= 45 A|||1.19|1.26||
||IF= 22.5 A|TJ= 125 °C||0.95|-||
||IF= 45 A|||1.14|-||
|||TJ= 150 °C||-|1.23||
|Reverse current at rated VRper diode|VR= rated VR|TJ= 25 °C|IR (2)|-|10|μA|
|||TJ= 125 °C||40|-||
|||TJ= 150 °C||-|1|mA|
|Typical junction capacitance|400 V, 1 MHz||CJ|27|-|pF|



## **Notes** 

> (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

- (2) Pulse test: Pulse width ≤ 40 ms 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**SEP4512**|**UNIT**|
|Typical thermal resistance per device|RθJA (1)(2)|32|°C/W|
|Typical thermal resistance per device|RθJM (3)|0.5|°C/W|



## **Notes** 

> (1) The heat generated must be less than the thermal conductivity from junction-to ambient dPD/dTJ < 1/RθJA 

> (2) Thermal resistance junction to ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint 

- (3) Thermal resistance junction-to-mount to follow JEDEC® 51-14 transient dual interface test method (TDIM) 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|SEP4512-M3/P|5.78|P|25/tube|Tube|
|SEP4512HM3/P(1)|5.78|P|25/tube|Tube|



## **Note** 

- (1)   AEC-Q101 qualified 

Revision: 13-Jul-2023 

Document Number: 98365 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SEP4512** 

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## Vishay General Semiconductor 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) 

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50 10000 1000 10000<br>With heatsink<br>45<br>100 T J = 175 °C<br>40 TJ = 150 °C<br>35 1000 10 T J = 125 °C 1000<br>30 T J  = 100 °C<br>25 1<br>20<br>100 0.1 100<br>15<br>10 0.01 T J = 25 °C<br>5 T J  = -40  ° C<br>0 10 0.001 10<br>0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100<br>Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%)<br>Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics<br>Axis Title Axis Title<br>70 10000  10 000 10000<br>TJ = 25 °C,<br>f = 1.0 MHz,<br>60 Vsig = 50 mVp-p<br>50 D = 0.8 1000<br>1000 1000<br>40<br>D = 0.5 D = 1.0 100<br>30<br>D = 0.3<br>100 100<br>20 T<br>D = 0.1 10<br>10<br>D = 0.2 D = tp/T tp<br>0 10 1 10<br>0 10 20 30 40 50 60 0.1 1 10 100 1000<br>Average Forward Current (A) Reverse Voltage (V)<br>Fig. 2 - Average Power Loss Characteristics Fig. 5 - Typical Junction Capacitance<br>Axis Title Axis Title<br>100 10000 1000 10000<br>Junction to ambient<br>TJ = 175 °C 100<br>10 1000 1000<br>10<br>T J = 150 °C<br>T J = 125 °C<br>1<br>1 TJ = 100 °C 100 100<br>T J  = 25 °C 0.1<br>TJ = -40 °C<br>0.1 10 0.01 10<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 0.1 1 10 100 1000<br>Instantaneous Forward Voltage (V) tp - Pulse Duration (s)<br>Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance<br>1st line 2nd line 2nd line<br>Instantaneous Reverse Current (µA)<br>Average Forward Rectified Current (A)<br>1st line 2nd line 2nd line<br>Average Power Loss (W) Junction Capacitance (pF)<br>1st line 2nd line 2nd line<br>Instantaneous Forward Current (A) Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


Revision: 13-Jul-2023 

Document Number: 98365 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SEP4512** 

Vishay General Semiconductor 

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## **PACKAGE OUTLINE DIMENSIONS** in millimeters (inches) **TO-247AD 3L** 

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(3) A A<br>B E (6) � P (Datum B)<br>S A2 Ø K M D B M<br>(2)   R/2 A �� P1<br>D2<br>Q<br>2 x R<br>D D1   (4)<br>(2)<br>1 2 3 D 4<br>Thermal pad<br>(5)   L1<br>C (4)<br>L A E1<br>0.01 M D B M<br>View A - A<br>See view B<br>2 x b2<br>2 x  e  C<br>3 x b<br>b4 A1<br>0.10 M C A M<br>Plating (b1, b3, b5) Base metal<br>D D E E<br>(c) c1 C C<br>(b, b2, b4)<br>(4)<br>Section C - C, D - D, E - E View B<br>**----- End of picture text -----**<br>


|**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**<br>3<br>4||**SYMBOL**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**NOTES**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**MIN.**|**MAX.**|**MIN.**|**MAX.**||||**MIN.**|**MAX.**|**MIN.**|**MAX.**||
|A|4.65|5.31|0.183|0.209|||D2|0.51|1.30|0.020|0.051||
|A1|2.21|2.59|0.087|0.102|||E|15.29|15.87|0.602|0.625|3|
|A2|1.50|2.49|0.059|0.098|||E1|13.46|-|0.53|-||
|b|0.99|1.40|0.039|0.055|||e|5.46 BSC||0.215 BSC|||
|b1|0.99|1.35|0.039|0.053|||¬K|0.254||0.010|||
|b2|1.65|2.39|0.065|0.094|||L|19.81|20.32|0.780|0.800||
|b3|1.65|2.34|0.065|0.092|||L1|3.71|4.29|0.146|0.169||
|b4|2.59|3.43|0.102|0.135|||¬P|3.56|3.66|0.14|0.144||
|b5|2.59|3.38|0.102|0.133|||¬P1|-|6.98|-|0.275||
|c|0.38|0.89|0.015|0.035|||Q|5.31|5.69|0.209|0.224||
|c1|0.38|0.84|0.015|0.033|||R|4.52|5.49|0.178|0.216||
|D|19.71|20.70|0.776|0.815|||S|5.51 BSC||0.217 BSC|||
|D1|13.08|-|0.515|-|||||||||



## **Notes** 

> (1) Dimensioning and tolerancing per ASME Y14.5M-1994 

- (2) Contour of slot optional 

> (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body 

> (4) Thermal pad contour optional with dimensions D1 and E1 

> (5) Lead finish uncontrolled in L1 

> (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") 

> (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 

Revision: 13-Jul-2023 

Document Number: 98365 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jul-2024 

Document Number: 91000 

**1** For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000