SEMIX453GB12E4S

**SEMiX453GB12E4s** 

||**Absolute Maximum Ratings**|
|---|---|
||**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**|
|3<br>as<br>vCe|**IGBT**<br>VCES<br>Tj= 25 °C<br>1200<br>V<br>IC<br>Tj= 175 °C<br>Tc= 25 °C<br>683<br>A<br>Tc= 80 °C<br>526<br>A<br>ICnom<br>450<br>A<br>ICRM<br>ICRM= 3xICnom<br>1350<br>A<br>~~a~~<br>~~en~~<br>~~ptf~~|
||VGES<br>-20 ... 20<br>V|
|**SEMiX® 3s**|VCC= 800 V|
||tpsc<br>VGE≤ 15 V<br>Tj= 150 °C<br>10<br>µs|
||VCES≤ 1200 V|
|Trench IGBT Modules|Tj<br>-40 ... 175<br>°C|
||**Inverse diode**|
|**SEMiX453GB12E4s**<br>**Features**<br>• Homogeneous Si<br>• Trench = Trenchgate technology<br>• VCE(sat)with positive temperature|VRRM<br>Tj= 25 °C<br>1200<br>V<br>IF<br>Tj= 175 °C<br>Tc= 25 °C<br>544<br>A<br>Tc= 80 °C<br>407<br>A<br>IFnom<br>450<br>A<br>IFRM<br>IFRM= 3xIFnom<br>1350<br>A<br>IFSM<br>tp= 10 ms, sin 180°, Tj= 25 °C<br>2430<br>A<br>Tj<br>-40 ... 175<br>°C<br>~~fo~~<br>~~PO~~<br>~~pp~~<br>~~po~~<br>~~es~~<br>~~Pr~~<br>~~a~~|
|coefficient|**Module**|
|• High short circuit capability<br>• UL recognized, file no. E63532<br>**Typical Applications***<br>• AC inverter drives|It(RMS)<br>600<br>A<br>Tstg<br>module without TIM<br>-40 ... 125<br>°C<br>Visol<br>AC sinus 50Hz, t = 1 min<br>4000<br>V<br>~~ee~~<br>~~eee~~<br>~~-~~<br>~~a~~<br>~~ooo~~<br>~~pf~~|
|• UPS<br>• Electronic Welding<br>**Remarks**<br>• Case temperature limited to TC=125°C<br>max.<br>• Product reliability results are valid for<br>Tj=150°C<br>• Dynamic values apply to the<br>following combination of resistors:<br>RGon,main= 1,0Ω<br>RGoff,main= 1,0Ω<br>RG,X= 2,2Ω<br>RE,X= 0,5Ω<br>• For storage and case temperature with<br>TIM see document “TP(*) SEMiX 3s”<br>one~~ee~~|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**<br>VCE(sat)<br>IC= 450 A<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>1.80<br>2.05<br>V<br>Tj= 150 °C<br>2.19<br>2.40<br>V<br>VCE0<br>chiplevel<br>Tj= 25 °C<br>0.8<br>0.9<br>V<br>Tj= 150 °C<br>0.7<br>0.8<br>V<br>rCE<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>2.2<br>2.6<br>mΩ<br>Tj= 150 °C<br>3.3<br>3.6<br>mΩ<br>VGE(th)<br>VGE=VCE, IC= 18 mA<br>5<br>5.8<br>6.5<br>V<br>ICES<br>VGE= 0 V, VCE= 1200 V, Tj= 25 °C<br>5<br>mA<br>Cies<br>VCE= 25 V<br>VGE= 0 V<br>f = 1 MHz<br>27.9<br>nF<br>Coes<br>f = 1 MHz<br>1.74<br>nF<br>Cres<br>f = 1 MHz<br>1.53<br>nF<br>QG<br>VGE= - 8 V...+ 15 V<br>2550<br>nC<br>RGint<br>Tj= 25 °C<br>1.7<br>Ω<br>td(on)<br>VCC= 600 V<br>IC= 450 A<br>VGE= +15/-15 V<br>RG on= 1.9Ω<br>RG off= 1.9Ω<br>di/dton= 4000 A/µs<br>di/dtoff= 5000 A/µs<br>Tj= 150 °C<br>336<br>ns<br>tr<br>Tj= 150 °C<br>80<br>ns<br>Eon<br>Tj= 150 °C<br>45<br>mJ<br>td(off)<br>Tj= 150 °C<br>615<br>ns<br>tf<br>Tj= 150 °C<br>130<br>ns<br>Eoff<br>Tj= 150 °C<br>66.5<br>mJ<br>Rth(j-c)<br>per IGBT<br>0.065<br>K/W<br>Rth(c-s)<br>per IGBT (λgrease=0.81 W/(m*K))<br>0.03<br>K/W<br>Rth(c-s)<br>per IGBT, pre-applied phase change<br>material<br>0.021<br>K/W<br>~~-~~<br>~~———-~~<br>~~**p**pp fe~~<br>~~a fy~~<br>~~f~~<br>~~:~~<br>~~ne~~<br>~~pp py~~<br>~~PO~~<br>~~oe~~<br>~~—— a~~<br>~~es~~<br>~~-~~<br>~~**a**~~<br>~~pf~~<br>~~ee~~<br>~~Sf~~|
|**GB**||
|**© by SEMIKRON**<br>**Rev. 3.0 – 06.07.2017**<br>**1**<br>~~Pe~~||



**SEMiX453GB12E4s** 

**SEMiX[®] 3s** 

## Trench IGBT Modules 

## **SEMiX453GB12E4s** 

## **Features** 

- Homogeneous Si 

- Trench = Trenchgate technology 

- VCE(sat) with positive temperature coefficient 

- High short circuit capability 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- AC inverter drives 

- UPS 

- Electronic Welding 

## **Remarks** 

- Case temperature limited to TC=125°C max. 

- Product reliability results are valid for Tj=150°C 

- Dynamic values apply to the 

- following combination of resistors: 

- RGon,main = 1,0 Ω 

- RGoff,main = 1,0 Ω 

|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|
|---|---|---|---|---|
|VF= VEC|IF= 450 A<br>VGE= 0 V<br>chiplevel|Tj= 25 °C|2.14<br>2.46<br>~~BS~~|V<br>~~-~~|
|||Tj= 150 °C|2.07<br>2.38<br>~~BS~~<br>~~Oo~~|V<br>~~-~~|
|VF0|chiplevel|Tj= 25 °C|1.30<br>1.50<br>~~BS~~<br>~~Oo~~|V<br>~~-~~|
|||Tj= 150 °C|0.90<br>1.10<br>~~BS~~|V<br>~~-~~|
|rF|chiplevel|Tj= 25 °C|1.87<br>2.1<br>~~BS~~|mΩ<br>~~-~~|
|||Tj= 150 °C|2.6<br>2.8|mΩ|
|IRRM<br>~~P|~~|IF= 450 A<br>di/dtoff= 5000 A/µs<br>VGE= -15 V<br>VCC = 600 V<br>~~a~~<br>~~oe~~|Tj= 150 °C|350|A|
|Qrr<br>~~P|~~||Tj= 150 °C|70|µC|
|Err<br>~~P|~~<br>~~a~~<br>~~oe~~||Tj= 150 °C<br>~~a~~<br>~~oe~~|28|mJ|
|Rth(j-c)<br>~~a~~<br>~~oe~~|per diode<br>~~a~~<br>~~oe~~||0.11|K/W|
|Rth(c-s)<br>~~a~~<br>~~oe~~|per diode (λgrease=0.81 W/(m*K))<br>~~a~~<br>~~oe~~||0.045|K/W|
|Rth(c-s)<br>~~oe~~<br>~~=e~~|per diode, pre-applied phase change<br>material<br>~~oe~~<br>~~=e~~||0.036<br>~~—~~<br>~~=e~~|K/W<br>~~—~~<br>~~=e~~|
|**Module**<br>~~—~~<br>~~=e~~<br>~~ae~~|||||
|LCE<br>~~=e~~<br>~~ae~~|~~=e~~<br>~~ae~~||20<br>~~—~~<br>~~=e~~|nH<br>~~—~~<br>~~=e~~|
|RCC'+EE'<br>~~=e~~<br>~~ae~~<br>~~ee~~|measured per<br>switch<br>~~=e~~<br>~~ae~~|TC= 25 °C<br>~~=e~~|0.7<br>~~—~~<br>~~=e~~|mΩ<br>~~—~~<br>~~_~~<br>~~—_~~<br>~~=e~~|
|~~=e~~<br>~~ae~~<br>~~ee~~||TC= 125 °C<br>~~=e~~|1<br>~~=e~~|mΩ<br>~~_~~<br>~~—_~~<br>~~=e~~|
|Rth(c-s)1<br>~~=e~~<br>~~ae~~<br>~~ee~~|calculated without thermal coupling<br>~~=e~~<br>~~ae~~||0.009<br>~~=e~~|K/W<br>~~—_~~<br>~~=e~~|
|Rth(c-s)2<br>~~ee~~|including thermal coupling,<br>Ts underneath module  (λgrease=0.81 W/<br>(m*K))||0.013|K/W|
|Rth(c-s)2|including thermal coupling,<br>Ts underneath module, pre-applied<br>phase change material||0.01|K/W|
|Ms<br>~~oe~~|to heat sink (M5)<br>~~ns~~<br>~~oe~~||3<br>5<br>~~ns~~|Nm<br>~~:~~<br>~~ns~~|
|Mt<br>~~oe~~|~~ns~~<br>~~oe~~|to terminals (M6)<br>~~ns~~<br>~~oe~~|2.5<br>5<br>~~ns~~|Nm<br>~~:~~<br>~~ns~~|
|~~oe~~||~~ns~~<br>~~oe~~|~~ns~~|Nm<br>~~:~~<br>~~ns~~|
|w<br>~~oe~~<br>~~a~~|~~ns~~<br>~~oe~~||300<br>~~ns~~|g<br>~~:~~<br>~~ns~~|
|**Temperature Sensor**<br>~~ns~~|||||
|R100|Tc=100°C (R25=5 kΩ)<br>~~ns~~||493 ± 5%<br>~~ns~~|Ω<br>~~ns~~|
|B100/125|R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];<br>~~ns~~||3550<br>±2%<br>~~ns~~|K<br>~~ns~~|



- RG,X = 2,2 Ω 

- RE,X = 0,5 Ω 

- For storage and case temperature with TIM see document “TP(*) SEMiX 3s” 

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GB<br>**----- End of picture text -----**<br>


~~Lee~~ **2 Rev. 3.0 – 06.07.2017 © by SEMIKRON** 

**SEMiX453GB12E4s** 

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3: Typ. turn-on /-off energy = f (IC) 

Fig. 5: Typ. transfer characteristic 

Fig. 2: Rated current vs. temperature IC = f (TC) 

Fig. 4: Typ. turn-on /-off energy = f (RG) 

Fig. 6: Typ. gate charge characteristic 

~~es~~ **© by SEMIKRON Rev. 3.0 – 06.07.2017 3** 

## **SEMiX453GB12E4s** 

Fig. 7: Typ. switching times vs. IC 

Fig. 9: Transient thermal impedance 

Fig. 11: Typ. CAL diode peak reverse recovery current 

Fig. 8: Typ. switching times vs. gate resistor RG 

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' 

Fig. 12: Typ. CAL diode recovery charge 

**© by SEMIKRON** 

**Rev. 3.0 – 06.07.2017** 

**4** 

## **SEMiX453GB12E4s** 

**==> picture [89 x 10] intentionally omitted <==**

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spring configuration<br>**----- End of picture text -----**<br>


**© by SEMIKRON** 

**Rev. 3.0 – 06.07.2017** 

**5** 

**SEMiX453GB12E4s** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. 

## ***IMPORTANT INFORMATION AND WARNINGS** 

The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. 

**© by SEMIKRON** 

**Rev. 3.0 – 06.07.2017** 

**6**