SE15PJ-M3/84A
Standard Recovery Diode, 600 V, 1.5 A, Single, 1.05 V, 900 ns, 30 A
- Manufacturer: VISHAY
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):1.5A; Diode Configuration:Single; Forward Voltage VF Max:1.05V; Reverse Recovery Time trr Max:900ns; Forward Surge C
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 2Pins
- Product Range: SE15P
- Qualification: -
- Diode Case Style: SMD
- Diode Configuration: Single
- Forward Voltage Max: 1.05V
- Forward Surge Current: 30A
- Reverse Recovery Time: 900ns
- Average Forward Current: 1.5A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.097 € |
| Current stock | 10+ |
| Lead time | 30 days |
**SE15PB, SE15PD, SE15PG, SE15PJ** www.vishay.com Vishay General Semiconductor ## **Surface Mount ESD Capability Rectifiers** ## **FEATURES** **==> picture [74 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> eSMP [®] Series<br>.<br>“<br>SMP (DO-220AA)<br>**----- End of picture text -----**<br> Cathode Anode - Very low profile - typical height of 1.0 mm - Ideal for automated placement - Oxide planar chip junction - Low forward voltage drop - Typical IR less than 0.1 μA - ESD capability - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **LINKS TO ADDITIONAL RESOURCES** ~~<>~~ 3D Models ## **PRIMARY CHARACTERISTICS** |**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**| |---|---| |IF(AV)|1.5 A| |VRRM|100 V, 200 V, 400 V, 600 V| |IFSM|30 A| |IR|5 μA| |VFat IF= 1.0 A|0.868 V| |TJmax.|175 °C| |Package|SMP (DO-220AA)| |Circuit configuration|Single| ## **TYPICAL APPLICATIONS** General purpose, power line polarity protection and rail-to-rail protection in consumer, industrial, and automotive applications. ## **MECHANICAL DATA** **Case:** SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade **Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test |**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)|**MAXIMUM RATINGS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**SE15PB**|**SE15PD**|**SE15PG**|**SE15PJ**|**UNIT**| |Device marking code||15B|15D|15G|15J|| |Max. repetitive peak reverse voltage|VRRM|100|200|400|600|V| |Average forward current (fig. 1)|IF(AV)|1.5||||A| |Peak forward surge current 10 ms single half<br>sine-wave superimposed on rated load|IFSM|30||||A| |Operating junction and storage temperature range|TJ, TSTG|-55 to +175||||°C| Revision: 16-Jun-2023 Document Number: 89025 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SE15PB, SE15PD, SE15PG, SE15PJ** www.vishay.com Vishay General Semiconductor |**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Max. instantaneous<br>forward voltage|IF= 1.5 A|TA= 25 °C|VF (1)|0.968|1.05|V| |||TA= 125 °C||0.868|0.95|| |Max. reverse current|Rated VR|TA= 25 °C|IR (2)|-|5.0|μA| |||TA= 125 °C||5.4|50|| |Max. reverse recovery time|IF= 0.5 A, IR= 1.0 A,<br>Irr= 0.25 A||trr|900|-|ns| |Typical junction capacitance|4.0 V, 1 MHz||CJ|9.5|-|pF| |**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Max. instantaneous<br>forward voltage|IF= 1.5 A|TA= 25 °C|VF (1)|0.968|1.05|V| |||TA= 125 °C||0.868|0.95|| |Max. reverse current|Rated VR|TA= 25 °C|IR (2)|-|5.0|μA| |||TA= 125 °C||5.4|50|| |Max. reverse recovery time|IF= 0.5 A, IR= 1.0 A,<br>Irr= 0.25 A||trr|900|-|ns| |Typical junction capacitance|4.0 V, 1 MHz||CJ|9.5|-|pF| ## **Notes** > (1) Pulse test: 300 μs pulse width, 1 % duty cycle - (2) Pulse test: Pulse width ≤ 40 ms |**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °c unless otherwise noted)| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**SE15PB**|**SE15PD**|**SE15PG**|**SE15PJ**|**UNIT**| |Typical thermal resistance|RθJA (1)|105||||°C/W| ||RθJL (1)|25||||| ||RθJC (1)|30||||| ## **Note** > (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. RθJL - is measured at the terminal of cathode band. RθJC is measured at the top center of the body. ## **IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS** ## (TA = 25 °C unless otherwise noted) |**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)|**IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS**<br>(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---| |**STANDARD**|**TEST TYPE**|**TEST CONDITIONS**|**SYMBOL**|**CLASS**|**VALUE**| |AEC-Q101-001|Human body model (contact mode)|C = 100 pF, R = 1.5 kΩ|VC|H3B|> 8 kV| |AEC-Q101-002|Machine model (contact mode)|C = 200 pF, R = 0Ω||M4|> 400 V| |JESD22-A114|Human body model (contact mode)|C = 100 pF, R = 1.5 kΩ||3B|> 8 kV| |JESD22-A115|Machine model (contact mode)|C = 200 pF, R = 0Ω||C|> 400 V| |IEC 61000-4-2(2)|Human body model (contact mode)|C = 150 pF, R = 330Ω||4|> 8 kV| ||Human body model (air-discharge mode)(1)|C = 150 pF, R = 330Ω||4|> 15 kV| ## **Notes** (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV - (2) System ESD standard ## **ORDERING INFORMATION** (Example) |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---| |**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**| |SE15PJ-M3/84A|0.024|84A|3000|7" diameter plastic tape and reel| |SE15PJ-M3/85A|0.024|85A|10 000|13" diameter plastic tape and reel| |SE15PJHM3/84A(1)|0.024|84A|3000|7" diameter plastic tape and reel| |SE15PJHM3/85A(1)|0.024|85A|10 000|13" diameter plastic tape and reel| ## **Note** - (1) Automotive grade Revision: 16-Jun-2023 Document Number: 89025 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SE15PB, SE15PD, SE15PG, SE15PJ** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## Vishay General Semiconductor ## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) **==> picture [195 x 352] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>Resistive or Inductive Load<br>1.5<br>1.0<br>0.5<br>T L Measured<br>at the Cathode Band Terminal<br>0<br>0 25 50 75 100 125 150 175<br>Lead Temperature (°C)<br>Fig. 1 - Max. Forward Current Derating Curve<br>1.8<br>D = 0.8<br>1.6 D = 0.5<br>D = 0.3<br>1.4<br>D = 0.2<br>1.2<br>D = 0.1 D = 1.0<br>1.0<br>0.8<br>T<br>0.6<br>0.4<br>0.2 D = t p /T t p<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>Average Forward Current (A)<br>Average Power Loss (W)<br>Average Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 2 - Forward Power Loss Characteristics **==> picture [209 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10000<br>TJ= 175 °C<br>TJ= 150 °C<br>10<br>1000<br>1<br>0.1 TJ = 25 °C 100<br>0.01<br>TJ = -40 °C<br>0.001 10<br>10 20 30 40 50 60 70 80 90 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Fig. 4 - Typical Instantaneous Forward Characteristics<br>100<br>T J = 25 °C<br>f = 1.0 MHz<br>V sig = 50 mVp-p<br>10<br>1<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Instantaneous Reverse Current (µA)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br> Fig. 5 - Typical Instantaneous Forward Characteristics **==> picture [189 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>T J = 175 °C<br>TJ= 150 °C<br>1<br>TJ= 25 °C<br>T J = -40 °C<br>0.1<br>0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>Instantaneous Forward Voltage (V)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 3 - Forward Power Loss Characteristics Revision: 16-Jun-2023 Document Number: 89025 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SE15PB, SE15PD, SE15PG, SE15PJ** www.vishay.com ## Vishay General Semiconductor ## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) ## **SMP (DO-220AA)** **==> picture [178 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> Cathode Band<br>0.086 (2.18)<br>0.074 (1.88)<br>0.142 (3.61)<br>0.126 (3.19)<br>0.158 (4.00)<br>0.146 (3.70)<br>**----- End of picture text -----**<br> **==> picture [204 x 59] intentionally omitted <==** **----- Start of picture text -----**<br> 0.013 (0.35)<br>0.004 (0.10) 0.045 (1.15)<br>0.033 (0.85)<br>0.012 (0.30) 0.018 (0.45)<br>0.000 (0.00) 0.006 (0.15)<br>**----- End of picture text -----**<br> **==> picture [225 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 0.012 (0.30) REF.<br>0.053 (1.35) 0.036 (0.91)<br>0.041 (1.05) 0.024 (0.61)<br>0.103 (2.60) 0.032 (0.80)<br>0.087 (2.20) 0.016 (0.40)<br>Mounting pad layout 0.025 0.030<br>0.105 (0.635) (0.762)<br>(2.67)<br>0.100 0.050<br>(2.54) (1.27)<br>**----- End of picture text -----**<br> Revision: 16-Jun-2023 Document Number: 89025 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2023 Document Number: 91000 **1**
Updated at June 7, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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