SDP30S120

_**Silicon Carbide**_ ~~——~~ **SDP30S120** 

## **Silicon Carbide Power Schottky Diode** 

## **Features:** 

- Positive Temperature Coefficient for Ease of Paralleling 

|**SDP30S120**<br>~~——~~|**SDP30S120**<br>~~——~~|**SDP30S120**<br>~~——~~|
|---|---|---|
|**Product Summary**|||
|VDC|1200|V|
|IF|30|A|
|Qc|130|nC|



- Temperature Independent Switching Behavior 

- 175 °C Maximum Operating Temperature 

- Zero Reverse Recovery Current 

- Zero Forward Recovery Voltage 

## **Applications:** 

- Solar Inverter 

- SMPS 

- Power Factor Correction 

2 Lead TO-247 

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K(3)<br>K(1) A(2)<br>**----- End of picture text -----**<br>


Internal Schematic 

- Induction Heating 

- UPS 

- Motor Drive 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Repetitive Peak Reverse Voltage|VRRM|Tj= 25 °C|1200|V|
|DC BlockingVoltage|VDC||1200||
|Continuous Forward Current(1)|IF|TC= 145 °C|30|A|
|||TC= 100 °C|46||
|Peak Repetitive Forward Current(1)|IFRM|TC= 125 °C, D = 0.1|120||
|Non-Repetitive Surge Forward<br>Current(1)|IFSM|TC= 25 °C, tP= 10 ms|110||
|||TC= 25 °C, tP= 10 us|700||
|Power Dissipation(1)|PD|TC= 25 °C|313|W|
|Operating and Storage Temperature|Tj, Tstg||-55 to +175|°C|



(1) Limited by maximum junction temperature, Tj,max 

SDP30S120 Rev 3.0 

1/5 

_**Silicon Carbide**_ **SDP30S120** 

## **THERMAL CHARACTERISTICS** 

|Parameter|Symbol|Conditions|Value|Value|Value|Unit|
|---|---|---|---|---|---|---|
||||Min|Typ|Max||
|Thermal Resistance,<br>junction-case|Rth,JC||-|0.48|-|°C / W|
|Thermal Resistance,<br>junction-ambient|Rth,JA||-|62|-||



## **ELECTRICAL CHARACTERISTICS, at Tj = 25 °C unless otherwise stated** 

|Parameter<br>~~a~~|Symbol|Conditions<br>~~oe~~|Value<br>~~oe~~|Value<br>~~oe~~|Value<br>~~oe~~|Unit<br>~~oe~~|
|---|---|---|---|---|---|---|
||||Min<br>~~oe~~|Typ<br>~~oe~~|Max<br>~~oe~~||
|Forward Voltage<br>~~a~~|VF|IF= 30 A, Tj= 25 °C<br>~~oe~~|-<br>~~oe~~|1.6<br>~~oe~~|1.8<br>~~oe~~|V<br>~~oe~~|
|||IF= 30 A, Tj= 175 °C<br>~~oe~~|-<br>~~oe~~|2.4<br>~~oe~~|2.9<br>~~oe~~||
|Reverse Current|IR|VR= 1200 V, Tj= 25 °C|-|30|300|uA|
|||VR= 1200 V, Tj= 175 °C|-|600|-||
|Total Capacitive Charge|QC|VR= 400 V, IF= 30 A,<br>di/dt = 500 A/us|-|130|-|nC|
|Total Capacitance<br>~~===~~|C<br>~~===~~|VR= 1 V, f = 1 MHz<br>~~===~~|-<br>~~===~~|3700<br>~~===~~|-<br>~~===~~|pF<br>~~===~~|
|||VR= 300 V, f = 1 MHz<br>~~===~~|-<br>~~===~~|150<br>~~===~~|-<br>~~===~~||
|||VR= 600 V, f = 1 MHz<br>~~===~~|-<br>~~===~~|110<br>~~===~~|-<br>~~===~~||



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Figure 1.  Typical Forward Characteristics Figure 2.  Typical Reverse Characteristics<br>IF = f(VF); parameter: Tj IR = f(VR); parameter: Tj<br>60 1.E-04<br>25  ° C 125  ° C 175  ° C<br>175  [o] C<br>1.E-05<br>45<br>125  [o] C<br>Lf 1.E-06 —<br>75  [o] C<br>30<br>1.E-07 25  [o] C<br>15 i<br>1.E-08<br>0 1.E-09<br>0 1 2 3 4 5 0 300 600 900 1200<br>VF, Forward Voltage (V) VR, Reverse Voltage (V)<br>, Forward Current (A)IF , Reverse Current (A)IR<br>**----- End of picture text -----**<br>


SDP30S120 Rev 3.0 

2/5 

_**Silicon Carbide**_ ~~—~~ **SDP30S120** 

**Figure 3.  Diode Forward Current** 

**Figure 4. Typical Capacitance** C = f(VR); TC = 25°C; f = 1 MHzR); TC = 25°C; f = 1 MHz); TC = 25°C; f = 1 MHzC = 25°C; f = 1 MHz = 25°C; f = 1 MHz 

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**----- Start of picture text -----**<br>
IF = f(TC); parameter: duty cycle, D C = f(VR); TC = 25°C; f = 1 MHzR); TC = 25°C; f = 1 MHz); TC = 25°C; f = 1 MHzC = 25°C; f = 1 MHz = 25°C; f = 1 MHz<br>250 4000<br>3500<br>200<br>3000<br>150 D=0.1 2500<br>2000<br>0.3<br>100 SX<br>0.5 1500<br>0.7<br>1 1000<br>50 Ss\<br>500<br>SQ<br>0<br>0<br>25 50 75 100 125 150 175 200<br>1 10 100 1000<br>TC, Case Temperature ( ° C) VR, Reverse Voltage (V)<br>Figure 5.  Transient Thermal Impedance<br>Zth(jc) = f(tP); parameter: duty cycle, D<br>1.0E+00<br>90%<br>70%<br>50%<br>1.0E-01 30% etlSr ||<br>10%<br>5%<br>1.0E-02 Mlmee all<br>2% TA<br>1%<br>0.5%<br>0.2%<br>‘illailTT ATL Al<br>1.0E-03<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tP, Pulse Width (s)<br>, Forward Current (A)<br>IF<br>C, Capacitance (pF)<br>C/W)<br>o<br>, Transient Thermal Impedance (<br>th(jc)<br>Z<br>**----- End of picture text -----**<br>


SDP30S120 Rev 3.0 

3/5 

_**Silicon Carbide**_ 

**SDP30S120** 

## **Package Dimensions: 2 Lead TO-247** 

|**DIM**<br>~~po~~<br>~~eee~~<br>~~a~~|**INCHES**<br>~~po~~<br>~~eeeee~~|**INCHES**<br>~~po~~<br>~~eeeee~~|**INCHES**<br>~~po~~<br>~~eeeee~~|
|---|---|---|---|
||**MIN**<br>~~po~~<br>~~eee~~<br>~~ee~~|**NOM**<br>~~po~~<br>~~eee~~<br>~~ee~~|**MAX**<br>~~po~~<br>~~ee~~<br>~~ee~~|
|**A**<br>~~po~~<br>~~eee~~<br>~~a~~<br>~~ee~~|0.082<br>~~po~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|0.825<br>~~po~~<br>~~eee ~~<br>~~ee~~<br>~~ee~~|0.830<br>~~po~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|**A1**<br>~~a~~<br>~~ee~~<br>~~a~~|0.077<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.079<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.081<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|**A2**<br>~~ee~~<br>~~a~~<br>~~ee~~|0.092<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|0.094<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|0.096<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|**b**<br>~~a~~<br>~~ee~~<br>~~a~~|0.042<br>~~ee~~<br>~~**ee**~~|0.047<br>~~ee~~<br>~~**ee**~~|0.052<br>~~ee~~<br>~~eee~~|
|**b1**<br>~~ee~~<br>~~a~~<br>~~ee~~|0.310<br>~~**ee**~~<br>~~ee~~|0.315<br>~~**ee**~~<br>~~ee~~|0.320<br>~~eee~~<br>~~eee~~|
|**b2**<br>~~ee ~~<br>~~a~~<br>~~ee~~<br>~~a~~|0.077<br> ~~**ee**~~<br>~~ee~~<br>~~ee~~|0.078<br>~~**ee** ~~<br>~~ee~~<br>~~ee~~|0.079<br> ~~eee~~<br>~~eee~~|
|**c**<br>~~ee~~<br>~~a~~<br>~~es~~|~~ee~~<br>~~ee~~<br>~~ee~~|0.024<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.027<br>~~eee~~|
|**D**<br>~~a~~<br>~~es~~<br>~~a~~|0.820<br>~~ee ~~<br>~~ee~~<br>~~ee~~|0.825<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.830|
|**E**<br>~~es~~<br>~~a~~<br>~~ee~~|0.621<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.626<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.631<br>~~eee~~|
|**e**<br>~~es ~~<br>~~a~~<br>~~ee~~<br>~~a~~|~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.215<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~eee~~|
|**L**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~ee~~|0.789<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|0.794<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|0.799<br>~~eee~~<br>~~eee~~|
|**L1**<br>~~ee ~~<br>~~a~~<br>~~ee~~<br>~~a~~|0.164<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~|0.170<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|0.176<br> ~~eee~~<br>~~eee~~|
|**L2**<br>~~ee~~<br>~~a~~<br>~~ee~~|0.077<br>~~**ee**~~<br>~~ee~~|0.078<br>~~**ee**~~<br>~~ee~~|0.079<br>~~eee~~<br>~~eee~~|
|**ØP**<br>~~ee ~~<br>~~a~~<br>~~ee~~<br>~~a~~|0.138<br> ~~**ee** ~~<br>~~ee~~<br>~~ee~~|0.139<br> ~~**ee** ~~<br>~~ee~~<br>~~ee~~|0.140<br> ~~eee~~<br>~~eee~~|
|**Q**<br>~~ee~~<br>~~a~~<br>~~ee~~|0.504<br>~~ee~~<br>~~ee~~<br>~~es~~|0.506<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.508<br>~~eee~~<br>~~ee~~|
|**Q3**<br>~~a~~<br>~~ee~~|0.145<br>~~ee~~<br>~~es~~|0.160<br>~~ee~~<br>~~ee~~|0.175<br>~~ee~~|



SDP30S120 Rev 3.0 

4/5 

_**Silicon Carbide**_ 

## **SDP30S120** 

Published by SemiSouth Laboratories, Inc. 201 Research Boulevard Starkville, MS  39759 USA © SemiSouth Laboratories, Inc. 2011 

Information in this document supersedes and replaces all information previously supplied. 

Information in this document is provided solely in connection with SemiSouth products. SemiSouth Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this document without notice. 

No license, express or implied to any intellectual property rights is granted under this document. 

Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. 

SDP30S120 Rev 3.0 

5/5