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SD2931-10W
RF FET Transistor, 125 V, 20 A, 389 W, 230 MHz, M174
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- Manufacturer: STMICROELECTRONICS
- Product type: RF FETs
- Drain Source Voltage Vds:125V; Continuous Drain Current Id:20A; Power Dissipation Pd:389W; Operating Frequency Min:-; Operating Frequency Max:230MHz; RF Transistor Case:M174; No. of Pin
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 389W
- Transistor Mounting: Flange
- Transistor Case Style: M174
- Operating Frequency Max: 230MHz
- Operating Frequency Min: -
- Drain Source Voltage Vds: 125V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 20A
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 46.16 € |
| Current stock | 10+ |
| Lead time | 21 days |
Datasheet
## **SD2931-10** ## RF power transistor: HF/VHF/UHF N-channel ower MOSFETs p **Datasheet** - **production data** - POUT = 150 W min. with 14 dB gain @ 175 MHz - Thermally enhanced packaging for lower junction temperatures ## **Description** **==> picture [58 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> M174<br>Epoxy sealed<br>**----- End of picture text -----**<br> ## **Figure 1. Pin connection** **==> picture [179 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 4 1<br>LN —<br>\ \ fo /<br>\ / \ J<br>nl H() J<br>Lo ye ——~<" \<br>\ / \ /<br>NY 4<br>3 2<br>1. Drain 3. Gate<br>2. Source 4. Source<br>**----- End of picture text -----**<br> The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. ## **Features** - Gold metalization - Excellent thermal stability - Common source configuration **Table 1. Device summary** |**Order code**|**Marking**|**Base qty.**|**Package**|**Packaging(1)**| |---|---|---|---|---| |SD2931-10W|SD2931-10|25 pcs|M174|Plastic tray| 1. For more details please refer to _Chapter 11: Marking, packing and shipping specifications_ . July 2016 DocID7076 Rev 10 1/19 This is information on a product in full production. _www.st.com_ **Contents** **SD2931-10** |**Contents**|**Contents**| |---|---| |**1**|**Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| ||1.1<br>Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| ||1.2<br>Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1<br>Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4| ||2.2<br>Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4| |**3**|**Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6**| |**4**|**Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**5**|**Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**6**|**Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**7**|**Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**8**|**Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| |**9**|**Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| |**10**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**| |**11**|**Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17**| |**12**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**| 2/19 DocID7076 Rev 10 **SD2931-10** **Electrical data** ## **1 Electrical data** ## **1.1 Maximum ratings** (TCASE = 25 °C) **.** **Table 2. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |V(BR)DSS<br>(1)|Drain source voltage|125|V| |VDGR|Drain-gate voltage (RGS= 1 MΩ)|125|V| |VGS|Gate-source voltage|±40|V| |ID|Drain current|20|A| |PDISS|Power dissipation|389|W| |TJ|Max. operating junction temperature|200|**°**C| |TSTG|Storage temperature|-65 to +150|**°**C| 1. TJ = 150°C ## **1.2 Thermal data** **Table 3. Thermal data** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |RthJC|Junction - case thermal resistance|0.45|**°**C/W| DocID7076 Rev 10 3/19 **SD2931-10** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE = 25 °C) **.** ## **2.1 Static** **Table 4. Static (per side)** ||**Table 4. Static(per side)**||||| |---|---|---|---|---|---| |**Symbol**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**| |V(BR)DSS|VGS= 0<br>IDS= 100 mA|125|||V| |IDSS|VGS= 0<br>VDS= 50 V|||50|μA| |IGSS|VGS= 20<br>VDS= 0|||250|nA| |VGS(Q)<br>(1)|VDS= 10 V<br>ID= 250 mA|See table below|||V| |VDS(ON)|VGS= 10 V<br>ID= 10 A|||3.0|V| |GFS|VDS= 10 V<br>ID= 5 A|5|6||mho| |CISS|VGS= 0<br>VDS= 50 V<br>f = 1 MHz||480||pF| |COSS|VGS= 0<br>VDS= 50 V<br>f = 1 MHz||190||pF| |CRSS|VGS= 0<br>VDS= 50 V<br>f = 1 MHz||18||pF| 1. VGS(Q) sorted with alpha/numeric code marked on unit. ## **2.2 Dynamic** **Table 5. Dynamic** ||**Table 5. Dynamic**||||| |---|---|---|---|---|---| |**Symbol**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**| |POUT|VDD= 50 V<br>IDQ= 250 mA<br>f = 175 MHz|150|||W| |GPS|VDD= 50 V IDQ= 250 mA<br>POUT =150 W f = 175 MHz|14|15||dB| |nD|VDD= 50 V<br>IDQ= 250 mA<br>POUT= 150 W f = 175 MHz|55|65||%| |Load<br>mismatch|VDD= 50 V<br>IDQ= 250 mA<br>POUT =150 W f = 175 MHz<br>All phase angles|10:1|||VSWR| 4/19 DocID7076 Rev 10 **SD2931-10** **Electrical characteristics** **Table 6. VGS sorts** |**Symbol**|**Value**|**Symbol**|**Value**| |---|---|---|---| |A|2.0 - 2.1|K|2.9 - 3.0| |B|2.1 - 2.2|L|3.0 - 3.1| |C|2.2 - 2.3|M|3.1 - 3.2| |D|2.3 - 2.4|N|3.2 - 3.3| |E|2.4 - 2.5|P|3.3 - 3.4| |F|2.5 - 2.6|Q|3.4 - 3.5| |G|2.6 - 2.7|R|3.5 - 3.6| |H|2.7 - 2.8|S|3.6 - 3.7| |J|2.8 - 2.9||| DocID7076 Rev 10 5/19 **SD2931-10** **Transient thermal impedance** ## **3 Transient thermal impedance** ## **Figure 2. Transient thermal impedance** 6/19 DocID7076 Rev 10 **SD2931-10** **Transient thermal impedance** ## **Figure 3. Transient thermal impedance model** DocID7076 Rev 10 7/19 **SD2931-10** **Impedance data** ## **4 Impedance data** ## **Figure 4. Impedance data** **==> picture [222 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>ZDL<br>Typical Input Typical Drain<br>Impedance Load Impedance<br>G<br>Zin<br>S<br>**----- End of picture text -----**<br> **Table 7. Impedance data** ||**Table 7. Impedance data**|| |---|---|---| |**Freq**|**ZIN (**Ω**)**|**ZDL (**Ω**)**| |30 MHz|1.7 - j 5.7|6.8 + j 0.9| |175 MHz|1.2 - j 2.0|2.0 + j 2.4| 8/19 DocID7076 Rev 10 **SD2931-10** **Typical performance** ## **5 Typical performance** **Figure 5. Capacitance vs drain-source voltage Figure 6. Drain current vs gate voltage** **==> picture [459 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>20<br>Tc=-20 °C<br>f =1MHz Tc=+25 °C<br>15<br>1000<br>Ciss<br>10 Tc=+80 °C<br>Coss<br>100 VDS = 10 V<br>5<br>Crss<br>10 0<br>0 10 20 30 40 50 2 2.5 3 3.5 4 4.5 5 5.5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF) ID, DRAIN CURRENT (A)<br>**----- End of picture text -----**<br> **==> picture [462 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Gate-source voltage vs case Figure 8. Maximum thermal resistance vs case<br>temperature temperature<br>1.12<br>0.6<br>1.08 Id =9A<br>Id =10A Id =7A<br>1.04 Id =5A<br>Id =11A 0.56<br>1<br>0.96 0.52<br>Id =4A<br>0.92 Id =2A<br>0.88 Id =1A 0.48<br>Vds= 10 V Id =.25A<br>0.84<br>Id =.1A 0.44<br>0.8 25 35 45 55 65 75 85<br>-25 0 25 50 75 100 Tc, CASE TEMPERATURE (°C)<br>Tc, CASE TEMPERATURE (°C)<br>RTH(j-c) (°C/W)<br>VGS, GATE-SOURCE VOLTAGE (NORMALIZED)<br>**----- End of picture text -----**<br> ## **Figure 9. Safe operating area** **==> picture [229 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>(1)<br>1<br>1 10 100 1000<br>Vds(V)<br>(1) Current in this area may be limited by Rds(on)<br>Ids(A)<br>**----- End of picture text -----**<br> DocID7076 Rev 10 9/19 **Typical performance @ 175 MHz** **SD2931-10** ## **6 Typical performance @ 175 MHz** **Figure 10. Output power vs input power Figure 11. Output power vs input power** **==> picture [459 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> 270<br>270<br>240 Vdd= 50V Tc =-20 °C<br>240<br>210 210 Tc =+25 °C<br>180 Vdd= 40V<br>180<br>150<br>150 Tc =+80 °C<br>120<br>120<br>90<br>90<br>60 f= 175MHz 60 Vdd= 50V<br>30 Idq= 250mA 30 Idq= 250mAf= 175MHz<br>0<br>0<br>0 5 10 15 20 25<br>0 5 10 15 20 25<br>Pin, INPUT POWER (W)<br>Pin, INPUT POWER(W)<br>Pout, OUTPUT POWER (W)<br>Pout, OUTPUT POWER (W)<br>**----- End of picture text -----**<br> **==> picture [462 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 12. Power gain vs output power Figure 13. Efficiency vs output power<br>18 80<br>16 70<br>14 60<br>12 50<br>10 40<br>Vdd=50V Vdd=50V<br>8 Idq=250mA 30 Idq=250mA<br>f=175Mhz f=175Mhz<br>6 20<br>0 50 100 150 200 250 0 50 100 150 200 250<br>Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W)<br>Gp, POWER GAIN (dB) Nd, EFFICIENCY (%)<br>**----- End of picture text -----**<br> **Figure 14. Output power vs supply voltage Figure 15. Drain current vs gate-source voltage** **==> picture [459 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 270 20<br>240 Pin =10W<br>Tc=-20 °C<br>210 Tc=+25 °C<br>15<br>Pin =5W<br>180<br>150<br>Pin =2.5W 10 Tc=+80 °C<br>120<br>90<br>5<br>60<br>Idq= 250mA<br>30 f= 175MHz<br>0 0<br>24 28 32 36 40 44 48 52 2 2.5 3 3.5 4 4.5 5 5.5 6<br>Vdd,DRAIN VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)<br>Pout,OUTPUT POWER(W) ID, DRAIN CURRENT (A)<br>**----- End of picture text -----**<br> 10/19 DocID7076 Rev 10 **SD2931-10** **Test circuit** ## **7 Test circuit** **==> picture [257 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16. 175 MHz schematic (production test circuit)<br>**----- End of picture text -----**<br> **==> picture [410 x 188] intentionally omitted <==** **==> picture [94 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Note: All dimensions in inches<br>**----- End of picture text -----**<br> REF. 1021579C **Table 8. Component part list** ||**Table 8. Componentpart list**| |---|---| |**Component**|**Description**| |T1|4:1 transformer, 25 ohm flexible coax .090 OD 6” long| |T2|1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long| |FB1|Toroid X 2, 0.5” OD .312” ID 850μ2 turns| |FB2, FB3|VK200| |FB4|Shield bead, 1” OD 0.5” ID 850μ3 turns| |L1|1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long| |PCB|0.62” woven fiberglass, 1 oz. copper, 2 sides,εr = 2.55| |R1, R3|470 ohm 1 W chip resistor| |R2|360 ohm 1/2 W resistor| |R4|20 Kohm 10 turn potentiometer| |R5|560 ohm 1 W resistor| |C1, C11|470 pF ATC chip cap| |C2|43 pF ATC chip cap| |C3, C8, C9|Arco 404, 12-65 pF| |C4|Arco 423, 16-100 pF| DocID7076 Rev 10 11/19 **SD2931-10** **Test circuit** **Table 8. Component part list (continued)** |**Component**|**Description**| |---|---| |C5|120 pF ATC chip cap| |C6|0.01μF ATC chip cap| |C7|30 pF ATC chip cap| |C10|91 pF ATC chip cap| |C12, C15|1200 pF ATC chip cap| |C13, C14,C16, C17|0.01μF / 500 V chip cap| |C18<br>1|0μF 63 V electrolytic capacitor| ## **Figure 17. 175 MHz test circuit photomaster** **==> picture [293 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 6.4 inches<br>4 inches<br>**----- End of picture text -----**<br> ## **Figure 18. 175 MHz test circuit** **==> picture [276 x 171] intentionally omitted <==** 12/19 DocID7076 Rev 10 **Typical performance @ 30 MHz** **SD2931-10** ## **8 Typical performance @ 30 MHz** ## **Figure 19. Output power vs input power Figure 20. Power gain vs output power** **==> picture [229 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>Vdd = 50 V<br>200<br>150<br>100 Vdd = 40 V<br>50 f = 30 MHz<br>IDQ = 250 mA<br>0<br>0 0.1 0.2 0.3 0.4 0.5<br>Pin, INPUT POWER (W)<br>Pout, OUTPUT POWER (W)<br>**----- End of picture text -----**<br> **==> picture [229 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>29<br>28<br>27<br>26 f = 30 MHz<br>VDD = 50 V<br>25 IDQ = 250 mA<br>24<br>0 40 80 120 160 200<br>Pout, OUTPUT POWER (W)<br>PG, POWER GAIN (dB)<br>**----- End of picture text -----**<br> **==> picture [462 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 21. Efficiency vs output power Figure 22. Output power vs supply voltage<br>70<br>200<br>Pin=.31 W<br>60<br>50 150 Pin=.22 W<br>40<br>30 f = 30 MHz 100 Pin=.13 W<br>20 VDD = 50 V<br>IDQ = 250 mA f = 30 MHz<br>10 50<br>IDQ = 250 mA<br>0<br>0 40 80 120 160 200 0<br>Pout, OUTPUT POWER (W) 24 28 32 36 40 44 48 52<br>VDD(V)<br>Pout(W)<br>Efficiency (%)<br>**----- End of picture text -----**<br> ## **Figure 23. Output power vs gate voltage** **==> picture [229 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>T= +25 °C<br>T= -20 °C<br>150<br>100 T= +80 °C<br>VDD = 50 V<br>50 IDQ = 250 mA<br>f = 30 MHz<br>Pin = Constant<br>0<br>0 1 2 3 4 5 6<br>VGS GATE-SOURCE VOLTAGE (V)<br>Pout, OUTPUT POWER (W)<br>**----- End of picture text -----**<br> DocID7076 Rev 10 13/19 **Test circuit @ 30 MHz** **SD2931-10** ## **9 Test circuit @ 30 MHz** ## **Figure 24. 30 MHz test circuit schematic (engineering test circuit)** **==> picture [391 x 159] intentionally omitted <==** ## **Figure 25. 30 MHz test circuit part list** ||**Figure 25. 30 MHz test circuitpart list**| |---|---| |**Symbol**|**Description**| |T1|9:1 transformer, 25Ωflexible coax with extra shield .090 OD 15” long| |T2|1:4 transformer, 50Ωflexible coax .225 OD 15” long| |FB1|Toroid 1.7” OD .30” ID 220μ4 turns| |FB2|Surface mount EMI shield bead| |FB3|Toroid 1.7” OD .300” ID 220μ3 turns| |RFC1|Toroid 0.5” OD 0.30” ID 125μ4 turns 12 awg wire| |PCB|0.62” woven fiberglass, 1 oz. Copper, 2 Sides,εr = 2.55| |R1, R3|1 KΩ1 W chip resistor| |R2|680Ω3 W wirewound resistor| |C1,C4,C6,C7,C8,<br>C9, C11,C12,C13|0.1μF ATC chip cap| |C2, C3|750 pF ATC chip cap| |C5|470 pF ATC chip cap| |C10|10μF 63 V electrolytic capacitor| |C14|100μF 63 V electrolytic capacitor| 14/19 DocID7076 Rev 10 **SD2931-10** **Package information** ## **10 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK is an ST trademark. **Figure 26. M174 (0.500 DIA 4/L N/HERM W/FLG) package outline** **==> picture [229 x 260] intentionally omitted <==** **==> picture [394 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Controlling Dimension: Inches 1011000D<br>**----- End of picture text -----**<br> DocID7076 Rev 10 15/19 **SD2931-10** **Package information** **Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) package mechanical data** |**Dim.**|**mm.**|**mm.**|**mm.**|**Inch**|**Inch**|**Inch**| |---|---|---|---|---|---|---| ||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**| |A|5.56||5.584|0.219||0.230| |B||3.18|||0.125|| |C|6.22||6.48|0.245||0.255| |D|18.28||18.54|0.720||0.730| |E||3.18|||0.125|| |F|24.64||24.89|0.970||0.980| |G|12.57||12.83|0.495||0.505| |H|0.08||0.18|0.003||0.007| |I|2.11||3.00|0.083||0.118| |J|3.81||4.45|0.150||0.175| |K|||7.11|||0.280| |L|25.53||26.67|1.005||1.050| |M|3.05||3.30|0.120||0.130| 16/19 DocID7076 Rev 10 **SD2931-10** **Marking, packing and shipping specifications** ## **11 Marking, packing and shipping specifications** **Table 10. Packing and shipping specifications** |**Order code**|**Packaging**<br>**P**|**cs pe**<br>**tray**|**r**<br>**Dry pack**<br>**humidity**|**VGS**|**Lot code**| |---|---|---|---|---|---| |SD2931-10W|Plastic tray|25|< 10 %|Not mixed|Not mixed| ## **Figure 27. Marking drawing** **==> picture [397 x 262] intentionally omitted <==** **Table 11. Marking specifications** ||**Table 11. Marking specifications**| |---|---| |**Symbol**|**Description**| |W|Wafer process code| |X|VGSsort| |CZ|Assembly plant| |xxx|Last 3 digit of diffusion lot| |VY|Diffusion plant| |MAR|County of origin| |CZ|Test and finishing plant| |y|Assembly year| |yy|Assembly week| DocID7076 Rev 10 17/19 **SD2931-10** **Revision history** ## **12 Revision history** **Table 12. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |09-Sep-2004|4|| |17-Jun-2004|5|Updated_Table 5: Dynamic on page 4_| |04-Mar-2008|6|Updated_Table 4: Static (per side), Table 5: Dynamic_and_Table 6:_<br>_VGS sorts on page 5_| |08-Feb-2011|7|Inserted_Chapter 11: Marking, packing and shipping specifications._| |12-Jan-2012|8|Inserted_Chapter 3: Transient thermal impedance._| |19-Dec-2012|9|Updated_Table 10: Packing and shipping specifications_| |14-Jul-2016|10|Updated VGSvalue in_Table 2: Absolute maximum ratings_.| 18/19 DocID7076 Rev 10 **SD2931-10** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID7076 Rev 10 19/19
Updated at March 21, 2026
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